Transcription of NTE184 (NPN) & NTE185 (PNP) Silicon …
1 NTE184 (NPN) & NTE185 (PNP) Silicon Complementary TransistorsAudio Power Amp, SwitchDescription:The NTE184 (NPN) and NTE185 (PNP) are Silicon complementary transistors in a TO126 plasticpackage designed for use in power amplifier and switching :DExcellent Safe Area LimitsAbsolute Maximum Ratings:Collector Emitter Voltage, VCEO80V.. Collector Base Voltage, VCB80V.. Emitter Base Voltage, VEB5V.. Collector Current, IC4A.. Base Current, IB1A.. Total Power Dissipation (TC = +25 C), PD40W.. Derate Above 25 C320mW/ C.
2 Operating Junction Temperature Range, TJ 65 to +150 C.. Storage Temperature Range, Tstg 65 to +150 C.. Thermal Resistance, Junction to Case, C/W.. Electrical Characteristics: (TC = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitOFF CharacteristicsCollector Emitter Sustaining VoltageVCEO(sus)IC = , IB = 0, Note 180 VCollector Cutoff CurrentICEOVCE = 80V, IB = 0 = 80V, VEB(off) = = 80V, VEB(off) = , TC = +150 C = 80V, IE = 0 Cutoff CurrentIEBOVBE = 5V, IC = 0 Characteristics.
3 (TC = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitON Characteristics (Note 1)DC Current GainhFEIC = , VCE = 2V20 80IC = 4A, VCE = 2V7 Collector Emitter Saturation VoltageVCE(sat)IC = , IB = = 4A, IB = 1A Emitter ON VoltageVBE(on)IC = , VCE = 2V CharacteristicsCurrent Gain Bandwidth ProductfTIC = 1A, VCE = 10V, f = MHzNote 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%.Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (hFE) matched to within10% of each 3.
4 NTE185 MCP is a matched complementary pair containing 1 each of NTE184 (NPN) andNTE185 (PNP)..330 ( ) ( ) ( ) ( ) ( ) (.762) ( ).118 ( )DiaEC B
