N- and P-Channel 60-V (D-S) MOSFET

1 vishay SiliconixSi4559 ADYD ocument Number: 73624S09-0393-Rev. B, and P-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Power MOSFET 100 % Rg and UIS TestedAPPLICATIONS CCFL InverterPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.) at VGS = 10 V at VGS = V at VGS = - 10 V - at VGS = - V - View2341 Ordering Information:Si4559 ADY-T1-E3 (Lead (Pb)-free)Si4559 ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)N- channel MOSFETD1G1S1S2G2D2P- channel MOSFETN otes: a. Based on TC = 25 Surface Mounted on 1" x 1" FR4 t = 10 Maximum under Steady State conditions is 110 C/W for N- channel and MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage VDS60- 60 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)TC = 25 = 70 = 25 , c- , cTA = 70 , c- , cPulsed Drain Current (10 s Pulse Width)

2 IDM20- 25 Source Drain Current Diode CurrentTC = 25 = 25 , c- , cPulsed Source-Drain CurrentISM20- 25 Single Pulse Avalanche CurrentL = mHIAS1115 Single Pulse Avalanche Power DissipationTC = 25 = 70 = 25 C2b, c2b, cTA = 70 , , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol N-ChannelP-ChannelUnit Junction-to-Ambientb, dt 10 C/WMaximum Junction-to-Foot (Drain)Steady Number: 73624S09-0393-Rev. B, 09-Mar-09 vishay SiliconixSi4559 ADYSPECIFICATIONS TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 A N-Ch60 VVGS = 0 V, ID = - 250 A P-Ch- 60 VDS Temperature Coefficient VDS/TJID = 250 A N-Ch55mVID = - 250 A P-Ch- 50 VGS(th) Temperature Coefficient VGS(th)/TJID = 250 A N-Ch- 6ID = - 250 A P-Ch4 Gate Threshold VoltageVGS(th)

3 VDS = VGS, ID = 250 A N-Ch13 VVDS = VGS, ID = - 250 A P-Ch- 1- 3 Gate-Body LeakageIGSSVDS = 0 V, VGS = 20 V N-Ch 100 nAP-Ch - 100 Zero Gate Voltage Drain CurrentIDSSVDS = 60 V, VGS = 0 V N-Ch1 AVDS = - 60 V, VGS = 0 V P-Ch- 1 VDS = 60 V, VGS = 0 V, TJ = 55 C N-Ch10 VDS = - 60 V, VGS = 0 V, TJ = 55 C P-Ch- 10On-State Drain CurrentbID(on) VDS 5 V, VGS = 10 V N-Ch20 AVDS - 5 V, VGS = - 10 V P-Ch- 25 Drain-Source On-State ResistancebRDS(on) VGS = 10 V, ID = A VGS = - 10 V, ID = - A = V, ID = A = - V, ID = - A Transconductancebgfs VDS = 15 V, ID = A N-Ch15 SVDS = - 15 V, ID = - A CapacitanceCissN-ChannelVDS = 15 V, VGS = 0 V, f = 1 MHz P-ChannelVDS = - 15 V, VGS = 0 V, f = 1 MHzN-Ch665pFP-Ch650 Output CapacitanceCossN-Ch75P-Ch95 Reverse Transfer CapacitanceCrss N-Ch40P-Ch60 Total Gate ChargeQgVDS = 30 V, VGS = 10 V, ID = A N-Ch1320nCVDS = - 30 V, VGS = - 10 V, ID = - A = 30 V, VGS = V, ID = A P-ChannelVDS = - 30 V, VGS = - V, ID = - AN-Ch69P-Ch812 Gate-Source ChargeQgs ChargeQgd ResistanceRgf = 1 MHzN-Ch23 P-Ch1420 Document Number: 73624S09-0393-Rev.

4 B, SiliconixSi4559 ADYN otes:a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions DynamicaTu r n - O n D e l a y T i m etd(on) N-ChannelVDD = 30 V, RL = ID A, VGEN = V, Rg = 1 P-ChannelVDD = - 30 V, RL = ID - A, VGEN = - V, Rg = 1 N-Ch1525nsP-Ch3045 Rise TimetrN-Ch65100P-Ch70105 Turn-Off Delay Timetd(off) N-Ch1525P-Ch4060 Fall TimetfN-Ch1015P-Ch3045Tu r n - O n D e l a y T i m etd(on) N-ChannelVDD = 30 V, RL = ID A, VGEN = 10 V, Rg = 1 P-ChannelVDD = - 30 V, RL = ID - A, VGEN = - 10 V, Rg = 1 N-Ch1015P-Ch1015 Rise TimetrN-Ch1525P-Ch1320 Turn-Off Delay Timetd(off)

5 N-Ch2030P-Ch3555 Fall TimetfN-Ch1015P-Ch3045 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C Diode Forward CurrentaISMN-Ch20P-Ch- 25 Body Diode VoltageVSDIS = = - 2 AP-Ch- Diode Reverse Recovery TimetrrN-ChannelIF = A, dI/dt = 100 A/ s, TJ = 25 CP- channel IF = - 2 A, dI/dt = - 100 A/ s, TJ = 25 CN-Ch3060nsP-Ch3050 Body Diode Reverse Recovery ChargeQrrN-Ch3250nCP-Ch3560 Reverse Recovery Fall TimetaN-Ch25nsP-Ch16 Reverse Recovery Rise Number: 73624S09-0393-Rev. B, 09-Mar-09 vishay SiliconixSi4559 ADYN- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate = 10 thru 4 V3 VVDS - Drain-to-Source Voltage (V)- Drain Current (A) = 10 VID - Drain Current (A)VGS = VRDS(on) - On-Resistance (m )024681003691215 VDS = 30 VID = A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGST ransfer CharacteristicsCapacitanceOn-Resistance vs.

6 Junction Temperature- 55 C C TC = 125 C VGS - Gate-to-Source Voltage (V)- Drain Current (A)IDCrss020040060080010000 102030405060 CossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50- 250255075100125150 VGS = 10 VID = ATJ - Junction Temperature ( C)RDS(on) - On-Resistance(Normalized)Document Number: 73624S09-0393-Rev. B, SiliconixSi4559 ADYN- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold = 25 C TJ = 150 C VSD - Source-to-Drain Voltage (V)- Source Current (A) 50- 250255075100125150ID = 250 A TJ - Temperature ( C)VGS(th) (V)On-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, 0 2468 10I D = A V GS - Gate-to-Source V oltage (V) RDS(on) - Drain-to-Source On-Resistance (m )01525510 Power (W)Time (s) Operating = 25 C Single Pulse- Drain Current (A) *DS(on) Limited by RVDS - Drain-to-Source Voltage (V)* VGS minimum VGS at which RDS(on) is ms10 ms100 msDC100 s 1 s10 s> Number: 73624S09-0393-Rev.

7 B, 09-Mar-09 vishay SiliconixSi4559 ADYN- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating*0123456255075100125150ID - Drain Current (A)TC - Case Temperature ( C)Power - Case Temperature ( C)Power Dissipation (W)Single Pulse Avalanche Capability110010TA - Time In Avalanche (s) - Peak Avalanche Current (A)TA=L. IDBV - VDDD ocument Number: 73624S09-0393-Rev. B, SiliconixSi4559 ADYN- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedNormalized Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Impedance1. Duty Cycle, D =2.

8 Per Unit Base = RthJA = 90 C/W3. TJM - TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface MountedPDMN ormalized Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Number: 73624S09-0393-Rev. B, 09-Mar-09 vishay SiliconixSi4559 ADYP- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain CurrentGate Charge0510152025012345678 VGS = 10 thru 5 VVDS - Drain-to-Source Voltage (V)- Drain Current (A)ID3 V4 - Drain Current (A)VGS = VVGS = 10 VRDS(on) - On-Resistance ( )024681003691215 VDS = 30 VID = A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGST ransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Temperature05101520250123456TC = 125 C - 55 C 25 C VGS - Gate-to-Source Voltage (V)- Drain Current (A)IDCrss020040060080010000 102030405060 VDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50 - 250255075100 125 150 175 VGS = 10 VID = ATJ - Junction Temperature ( C)RDS(on) - On-Resistance(Normalized)Document Number: 73624S09-0393-Rev.

9 B, SiliconixSi4559 ADYP- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold = 25 C20101 VSD - Source-to-Drain Voltage (V)- Source Current (A)ISTJ = 150 C- 50- 250255075100125150ID = 250 A Variance (V)VGS(th)TJ - Temperature ( C)On-Resistance vs. Gate-to-Source VoltageSingle Pulse = AVGS - Gate-to-Source Voltage (V)RDS(on) - On-Resistance ( )0301020 Power (W)Time (s)4016001010-110-35010010-2 Safe Operating Area, Drain Current (A) = 25 C Single PulseP(t) = 10 DCID(on)Limited BVDSS LimitedP(t) = 1P(t) = (t) = (t) = (t) = LimitedLimitedby RDS(on)*VDS - Drain-to-Source Voltage (V)* VGS minimum VGS at which RDS(on) is specified> Number: 73624S09-0393-Rev. B, 09-Mar-09 vishay SiliconixSi4559 ADYP- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.

10 It is used to determine the current rating, when this rating falls below the Derating* - Drain Current (A)TC - Case Temperature ( C)Power Derating, - Case Temperature ( C)Power Dissipation (W)Single Pulse Avalanche Capability110010TA - Time In Avalanche (s) - Peak Avalanche Current (A)TAL. IDBV - VDD=Document Number: 73624S09-0393-Rev. B, SiliconixSi4559 ADYP- channel TYPICAL CHARACTERISTICS 25 C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Junction-to-Ambient10 -3 10 -2 1 1 0 60010 -1 10 -4 100 2 1 Single Pulse Duty Cycle = Square Wave Pulse Duration (s)Normalized Ef fective T ransient Thermal Impedance 1.