40V Dual N-Channel MOSFET

1 AO4840. 40V dual N-Channel MOSFET . General Description Product Summary The AO4840 uses advanced trench technology VDS 40V. mosfets to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6A. charge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V) < 30m . switch or in PWM applications. RDS(ON) (at VGS= ) < 38m . 100% UIS Tested 100% Rg Tested SOIC-8 D1 D2. Top View Bottom View Top View S2 1 8 D2. G2 2 7 D2. S1 3 6 D1. G1 4 5 D1 G1 G2. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 40 V. Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C 6. ID. Current TA=70 C 5 A. C. Pulsed Drain Current IDM 30. Avalanche Current C IAS, IAR 14 A. C. Avalanche energy L= EAS, EAR 10 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C.

2 Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 74 90 C/W. Maximum Junction-to-Lead Steady-State R JL 32 40 C/W. Rev 5: August 2011 Page 1 of 5. AO4840. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 40 V. VDS=40V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A 3 V. ID(ON) On state drain current VGS=10V, VDS=5V 30 A. VGS=10V, ID=6A 24 30. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 36 45. VGS= , ID=5A 30 38 m . gFS Forward Transconductance VDS=5V, ID=6A 27 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V.

3 IS Maximum Body-Diode Continuous Current 2 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 410 516 650 pF. Coss Output Capacitance VGS=0V, VDS=20V, f=1 MHz 55 82 110 pF. Crss Reverse Transfer Capacitance 25 43 60 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge nC. Qg( ) Total Gate Charge nC. VGS=10V, VDS=20V, ID=6A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=10V, VDS=20V, RL= , ns tD(off) Turn-Off DelayTime RGEN=3 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/ s 18 24 ns Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/ s 10 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design.

4 B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

5 AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: August 2011 Page 2 of 5. AO4840. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 40 40. 10V VDS=5V. 30 5V. 30. ID (A). ID(A). 20 4V 20. 125 C. 10 10. VGS= 25 C. 0 0. 0 1 2 3 4 5 1 2 3 4 5. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 40 Normalized On-Resistance 2. VGS=10V. 35 VGS= ID=6A. ). RDS(ON) (m . 17. 30. 5. 2. 25. 10. VGS= ID=5A. 1. VGS=10V. 20 0 5 1015 20 25 30 0 25 50 75 100 125 150 175 200. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 80 +02. ID=6A. 70 +01. 40.

6 +00. 60. ). RDS(ON) (m . 125 C. IS (A). 50. 125 C 40. 25 C 25 C. 30 20 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 5: August 2011 Page 3 of 5. AO4840. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 800. VDS=20V. ID=6A 700. 8. 600. Ciss Capacitance (pF). 500. VGS (Volts). 6. 400. 4 300. 200 Coss 2. 100. Crss 0 0. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 10000. TA=25 C. 10 s RDS(ON) 1000. limited 100 s ID (Amps). Power (W). 100. 1ms 10ms TJ(Max)=150 C. 10. TA=25 C. 10s DC. 1. VDS. 1 (Volts) 10 100 10 1000. Figure 9: Maximum Forward Biased Safe Pulse Width (s). Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F).

7 10. D=Ton/T In descending order D= , , , , , , single pulse Z JA Normalized Transient TJ,PK=TA+ JA. Thermal Resistance 1 R JA=90 C/W. PD. Ton T. 1 10 100 1000. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 5: August 2011 Page 4 of 5. AO4840. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 5: August 2011 Page 5 of 5.