30V Dual N-Channel MOSFET

1 AO4832. 30V dual N-Channel MOSFET . General Description Product Summary The AO4832 uses advanced trench technology to provide VDS 30V. excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A. This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) < 13m . general purpose applications. RDS(ON) (at VGS= ) < . 100% UIS Tested 100% Rg Tested SOIC-8 D1 D2. Top View Bottom View Top View S2 1 8 D2. G2 2 7 D2. S1 3 6 D1. G1 4 5 D1 G1 G2. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C 10. ID. Current TA=70 C 8 A. C. Pulsed Drain Current IDM 55.

2 Avalanche Current C IAS, IAR 22 A. C. Avalanche energy L= EAS, EAR 24 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 74 90 C/W. Maximum Junction-to-Lead Steady-State R JL 32 40 C/W. Rev 0: Jan. 2010 Page 1 of 6. AO4832. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 30 V. VDS=30V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5.

3 IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS=10V, VDS=5V 55 A. VGS=10V, ID=10A 13. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 19. VGS= , ID=8A 14 m . gFS Forward Transconductance VDS=5V, ID=10A 43 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current A. DYNAMIC PARAMETERS. Ciss Input Capacitance 610 760 910 pF. Coss Output Capacitance VGS=0V, VDS=15V, f=1 MHz 88 125 160 pF. Crss Reverse Transfer Capacitance 40 70 100 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 11 14 17 nC. Qg( ) Total Gate Charge 5 8 nC.

4 VGS=10V, VDS=15V, ID=10A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge 3 nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL= , 9 ns tD(off) Turn-Off DelayTime RGEN=3 17 ns tf Turn-Off Fall Time 6 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/ s 7 8 ns Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/ s 8 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

5 Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

6 AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan. 2010 Page 2 of 6. AO4832. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 100 30. 10V VDS=5V. 6V 5V 25. 80. 7V. 20. 60. ID (A). ID(A). 15. 4V. 40. 10 125 C. 20 5 25 C. VGS=3V. 0 0. 0 1 2 3 4 5 0 1 2 3 4 5. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 20 Normalized On-Resistance VGS=10V. VGS= ID=10A. 15. ). RDS(ON) (m . 17. 5. VGS= 2. 10 ID=8A. VGS=10V 1. 10. 5 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175. ID (A). Figure 3: On-Resistance vs.

7 Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 30 +02. ID=10A. +01. 25. 40. +00. 125 C. ). 20. RDS(ON) (m . 125 C. IS (A). 15. 25 C. 25 C. 10. 5 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 0: Jan. 2010 Page 3 of 6. AO4832. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 1200. VDS=15V. ID=10A. 1000. 8. Ciss Capacitance (pF). 800. VGS (Volts). 6. 600. 4. 400. 2 Coss 200. Crss 0 0. 0 3 6 9 12 15 0 5 10 15 20 25 30. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.

8 TA=25 C IAR (A) Peak Avalanche Current TA=100 C. RDS(ON) 10 s ID (Amps). limited 10 TA=125 C 100 s TA=150 C. 1ms 10ms TJ(Max)=150 C. 10s TA=25 C. DC. 1 1 10 100 1000 1 10 100. s). Time in avalanche, tA ( VDS (Volts). Figure 9: Single Pulse Avalanche capability (Note C). Figure 10: Maximum Forward Biased Safe Operating Area (Note F). 10000. TA=25 C. 1000. Power (W). 100. 10. 1. 10 1000. Pulse Width (s). Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F). Rev 0: Jan. 2010 Page 4 of 6. AO4832. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10. D=Ton/T In descending order Z JA Normalized Transient TJ,PK=TA+ JA D= , , , , , , single pulse Thermal Resistance 1 R JA=90 C/W.

9 PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 12: Normalized Maximum Transient Thermal Impedance (Note F). Rev 0: Jan. 2010 Page 5 of 6. AO4832. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 0: Jan. 2010 Page 6 of 6.