Transcription of 60V N-Channel MOSFET
1 AO642060V N-Channel MOSFETP roduct SummaryVDS(V) = 60 VID= (VGS= 10V)RDS(ON) < 60m (VGS= 10V)RDS(ON)< 75m (VGS= )General DescriptionThe AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM D SDDGDSDTop View1 2 36 5 4 TSOP6 Top View Bottom View Pin1 SymbolVDSVGSIDMTJ, JL3540 Maximum Junction-to-Lead CSteady-State C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At 10sR JA C/W C/WWTA=70 and Storage Temperature Range-55 to 150 CPower Drain Current B20 Continuous DrainCurrent A,FTA=25 CMaximum Junction-to-Ambient Voltage60TA=25 CAbsolute Maximum Ratings TA=25 C unless otherwise notedParameterMaximumUnitsVGate-Source Voltage 20 Alpha & Omega Semiconductor, C5 IGSS100nAVGS(th) (ON)20A5060TJ=125 C856075m Qg(10V) ( ) (on) Body-Diode Continuous CurrentDYNAMIC PARAMETERST otal Gate ChargeInput CapacitanceDrain-Source Breakdown VoltageID=250 A, VGS=0 VIDSSZero Gate Voltage Drain CurrentVDS=60V, VGS=0VN channel Electrical Characteristics (TJ=25 C unless otherwise noted)
2 ParameterConditionsSTATIC PARAMETERSGate Threshold VoltageVDS=VGS ID=250 AOn state drain currentVGS=10V, VDS=5V AGate-Body leakage currentVDS=0V, VGS= 20 VRDS(ON)Static Drain-Source On-ResistanceForward Transconductancem VGS= , ID=3 AVDS=5V, ID= ,VGS=0 VVGS=10V, ID= Forward VoltageGate Source ChargeGate Drain ChargeTurn-On DelayTimeTotal Gate ChargeVGS=10V, VDS=30V, ID= , VDS=30V, f=1 MHzVGS=0V, VDS=0V, f=1 MHzSWITCHING PARAMETERSR everse Transfer CapacitanceGate resistanceOutput CapacitanceAlpha & Omega Semiconductor, (on) (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICEBody Diode Reverse Recovery ChargeIF= , dI/dt=100A/ sTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeIF= , dI/dt=100A/ sVGS=10V, VDS=30V, RL=7 ,RGEN=3 Turn-On DelayTimeTurn-On Rise TimeA: The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz.
3 Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance : Repetitive rating, pulse width limited by junction The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The SOA curve provides a single pulse rating. current rating is based on the t 10s thermal resistance : Feb. 2012 Alpha & Omega Semiconductor, ELECTRICAL AND THERMAL CHARACTERISTICS: N-Channel 05101520012345ID(A)VDS(Volts)Fig 1: On-Region CharacteristicsVGS= (A)VGS(Volts)Figure 2: Transfer Characteristics2030405060708090100051015 20 RDS(ON)(m ) On-ResistanceVGS= C125 CVDS=5 VVGS= & Omega Semiconductor, (A)Figure 3: On-Resistance vs.
4 Drain Current and Gate + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics25 C125 ( C)Figure 4: On-Resistance vs. Junction Temperature406080100120140160246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source VoltageID= C125 CAlpha & Omega Semiconductor, ELECTRICAL AND THERMAL CHARACTERISTICS: N-Channel 02468100246810 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800010203040506 0 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)CossCrssVDS=30 VID= (Max)=150 CTA=25 (Amps)10 (ON) limitedTJ(Max)=150 CTA=25 C100 s10s1sAlpha & Omega Semiconductor, Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceD=Ton/TTJ,PK=TA+ JAR JA=110 C/WIn descending orderD= , , , , , , single pulseSingle (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)10sAlpha & Omega Semiconductor.
