LTC4444-5 - High Voltage Synchronous N-Channel MOSFET …

1 LTC4444-5144445fc TYPICAL APPLICATION FEATURES APPLICATIONS DESCRIPTIONHigh Voltage Synchronous N-Channel MOSFET DriverThe LTC 4444-5 is a high frequency high Voltage gate driver that drives two N-Channel MOSFETs in a synchro-nous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate LTC4444-5 is configured for two supply-indepen-dent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may func-tion at up to 114V above ground. The LTC4444-5 contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously. For a similar driver in this product family, please refer to the chart ProtectionYesNoYesAbsolute Max TS100V100V100 VMOSFET Gate to to to UV+ UV Bootstrap Supply Voltage to 114Vn Wide VCC Voltage .

2 To Adaptive Shoot-Through Protectionn Peak Top Gate Pull-Up Currentn Peak Bottom Gate Pull-Up Currentn Top Gate Driver Pull-Downn Bottom Gate Driver Pull-Downn 5ns Top Gate Fall Time Driving 1nF Loadn 8ns Top Gate Rise Time Driving 1nF Loadn 3ns Bottom Gate Fall Time Driving 1nF Loadn 6ns Bottom Gate Rise Time Driving 1nF Loadn Drives Both High and Low Side N-Channel MOSFETsn Undervoltage Lockoutn Thermally Enhanced 8-Pin MSOP Packagen Distributed Power Architecturesn Automotive Power Suppliesn High Density Power Modulesn Telecommunication SystemsHigh Input Voltage Buck ConverterLTC4444-5 Driving a 1000pF Capacitive LoadL, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and No RSENSE is a trademark of Linear Technology Corporation.

3 All other trademarks are the property of their respective owners. Protected by Patents, including (FROM CONTROLLER IC)PWM1(FROM CONTROLLER IC) TO TA01aBINP5V/DIVBG5V/DIVTINP5V/DIVTG-TS5V /DIV20ns/DIV44445 TA01bLTC4444-5244445fc PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGSS upply Voltage to 14V BOOST TS .. to 14 VTINP Voltage .. 2V to 14 VBINP Voltage .. 2V to 14 VBOOST Voltage .. to 114 VTS Voltage .. 5V to 100 VOperating Junction Temperature Range (Notes 2, 3) .. 55 C to 150 CStorage Temperature Range .. 65 C to 150 CLead Temperature (Soldering, 10 sec) .. 300 C(Note 1)1234 TINPBINPVCCBG8765 TSTGBOOSTNCTOP VIEW9 GNDMS8E PACKAGE8-LEAD PLASTIC MSOPTJMAX = 125 C, JA = 40 C/W, JC = 10 C/W (NOTE 4)EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION ELECTRICAL CHARACTERISTICSSYMBOLPARAMETERCONDITIONS MINTYPMAXUNITSGate Driver Supply, VCCVCCO perating Supply Current TINP = BINP = 0V320520 AUVLOU ndervoltage Lockout ThresholdVCC RisingVCC Supply (BOOST TS)IBOOSTDC Supply CurrentTINP = BINP = AInput Signal (TINP, BINP)VIH(BG)BG Turn-On Input ThresholdBINP Ramping (BG)BG Turn-Off Input ThresholdBINP Ramping (TG)TG Turn-On Input ThresholdTINP Ramping (TG)

4 TG Turn-Off Input ThresholdTINP Ramping The l denotes the specifications which apply over the full operating junctiontemperature range, otherwise specifications are at TA = 25 C (Note 2). VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise FREE FINISHTAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4444 EMS8E-5#PBFLTC4444 EMS8E-5#TRPBFLTDPY8-Lead Plastic MSOP 40 C to 125 CLTC4444 IMS8E-5#PBFLTC4444 IMS8E-5#TRPBFLTDPY8-Lead Plastic MSOP 40 C to 125 CLTC4444 HMS8E-5#PBFLTC4444 HMS8E-5#TRPBFLTDPY8-Lead Plastic MSOP 40 C to 150 CLTC4444 MPMS8E-5#PBFLTC4444 MPMS8E-5#TRPBFLTFDF8-Lead Plastic MSOP 55 C to 150 CConsult LTC Marketing for parts specified with wider operating temperature ranges.

5 *The temperature grade is identified by a label on the shipping LTC Marketing for information on non-standard lead based finish more information on lead free part marking, go to: For more information on tape and reel specifications, go to: 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and 2: The LTC4444-5 is tested under pulsed load conditions such that TJ TA. The LTC4444E-5 is guaranteed to meet specifications from 0 C to 85 C junction temperature. Specifications over the 40 C to 125 C operating junction temperature range are assured by design, characterization and correlation with statistical process controls.

6 The LTC4444I-5 is guaranteed over the 40 C to 125 C operating temperature range, LTC4444H-5 is guaranteed over the 40 C to 150 C operating temperature range and the LTC4444MP-5 is tested and guaranteed over the full 55 C to 150 C operating junction temperature range. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junctiontemperature range, otherwise specifications are at TA = 25 C (Note 2). VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise (BINP)Input Pin Bias Current 2 AHigh Side Gate Driver Output (TG)VOH(TG)TG High Output VoltageITG = 10mA, VOH(TG) = VBOOST (TG)TG Low Output VoltageITG = 100mA, VOL(TG) = VTG VTSl150300mVIPU(TG)TG Peak Pull-Up (TG)TG Pull-Down Low Side Gate Driver Output (BG)VOH(BG)BG High Output VoltageIBG = 10mA, VOH(BG) = VCC (BG)BG Low Output VoltageIBG = 100mAl75150mVIPU(BG)BG Peak Pull-Up (BG)BG Pull-Down Switching Time [BINP (TINP) is Tied to Ground While TINP (BINP) is Switching.]

7 Refer to Timing Diagram]tPLH(TG)TG Low-High Propagation Delayl3360nstPHL(TG)TG High-Low Propagation Delayl2445nstPLH(BG)BG Low-High Propagation Delayl2750nstPHL(BG)BG High-Low Propagation Delayl1535nstr(TG)TG Output Rise Time10% 90%, CL = 1nF10% 90%, CL = 10nF880nsnstf(TG)TG Output Fall Time10% 90%, CL = 1nF10% 90%, CL = 10nF550nsnstr(BG)BG Output Rise Time10% 90%, CL = 1nF10% 90%, CL = 10nF660nsnstf(BG)BG Output Fall Time10% 90%, CL = 1nF10% 90%, CL = 10nF330nsnsHigh junction temperatures degrade operating lifetimes; operating lifetime is derated for junction temperatures greater than 125 C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental 3: The junction temperature (TJ, in C) is calculated from the ambient temperature (TA, in C) and power dissipation (PD, in watts) according to the formula: TJ = TA + (PD JA)where JA (in C/W) is the package thermal 4.

8 Failure to solder the exposed back side of the MS8E package to the PC board will result in a thermal resistance much higher than 40 TYPICAL PERFORMANCE CHARACTERISTICSVCC Supply Quiescent Current vs VoltageBOOST-TS Supply Quiescent Current vs VoltageVCC Supply Current vs TemperatureBoost Supply Current vs TemperatureOutput Low Voltage (VOL) vs Supply VoltageOutput High Voltage (VOH) vs Supply VoltageInput Thresholds (TINP, BINP) vs Supply VoltageInput Thresholds (TINP, BINP) vs TemperatureInput Thresholds (TINP, BINP) Hysteresis vs VoltageVCC SUPPLY Voltage (V)00 QUIESCENT CURRENT ( A)5015020025067891011121345044445 G011001234514300350400 TINP = BINP = 0 VTINP (BINP) = 6 VTA = 25 CBOOST = 6 VTS = GNDBOOST SUPPLY Voltage (V)00 QUIESCENT CURRENT ( A)5015020025067891011121340044445 G021001234514300350 TINP = BINP = 0 VTINP = 6V, BINP = 0 VTINP = 0V, BINP = 6 VTA = 25 CVCC = 6 VTS = GND 55 255356595125 150 TEMPERATURE ( C)280 VCC SUPPLY CURRENT ( A)28529530030532544445 G03290310315320 VCC = BOOST = 6 VTS = GNDTINP = BINP = 0 VTINP (BINP) = 6 VTEMPERATURE ( C)BOOST SUPPLY CURRENT ( A)25030035044445 G04150040020010050 TINP = 6V, BINP = 0 VTINP = 0V, BINP = 6 VTINP = BINP = 0 VVCC = BOOST = 6 VTS = GND 55 255356595125 150 SUPPLY Voltage (V) Voltage (mV) (TG)VOL(BG)TA = 25 CITG(BG) = 100mABOOST = VCCTS = GNDSUPPLY Voltage (V) OR BG OUTPUT Voltage (V) = 25 CBOOST = VCCTS = GND 100mA 1mA 10mASUPPLY Voltage (V) OR BG INPUT THRESHOLD (V) = 25 CBOOST = VCCTS = GNDVIH(TG,BG)

9 VIL(TG,BG) 55 255356595125 150 TEMPERATURE ( C)TG OR BG INPUT THRESHOLD (V) = BOOST = 6 VTS = GNDVIH(TG,BG)VIL(TG,BG)SUPPLY Voltage (V) OR BG INPUT THRESHOLD HYSTERESIS (mV) = 25 CBOOST = VCCTS = GNDLTC4444-5544445fcTYPICAL PERFORMANCE CHARACTERISTICSI nput Thresholds (TINP, BINP) Hysteresis vs TemperatureVCC Undervoltage Lockout Thresholds vs TemperatureRise and Fall Time vs VCC Supply VoltageRise and Fall Time vs Load CapacitancePeak Driver (TG, BG) Pull-Up Current vs TemperatureOutput Driver Pull-Down Resistance vs TemperaturePropagation Delay vs VCC Supply VoltagePropagation Delay vs Temperature 55 255356595125 150 TEMPERATURE ( C)TG OR BG INPUT THRESHOLD HYSTERESIS (mV)45047550044445 G10425400375 VCC = BOOST = 6V TS = GNDTEMPERATURE ( C)VCC SUPPLY Voltage (V) THRESHOLDFALLING THRESHOLDBOOST = VCCTS = GND 55 255356595125 150 SUPPLY Voltage (V) TIME (ns) G12TA = 25 CBOOST = VCCTS = GNDCL = (TG)tf(TG)tf(BG)tr(BG)LOAD CAPACITANCE (nF)1 RISE/FALL TIME (ns)405060944445 G1330200357210468108070TA = 25 CVCC = BOOST = 6 VTS = GNDtr(TG)tf(TG)tf(BG)tr(BG) 55 255356595125 150 TEMPERATURE ( C)PULL-UP CURRENT (A) (BG)VCC = 6 VIPU(TG)BOOST TS = 12 VIPU(TG)BOOST TS = 6 VIPU(BG)VCC = 12V 55 255356595125 150 TEMPERATURE ( C)OUTPUT DRIVER PULL-DOWN RESISTANCE ( ) TS = 6 VBOOST TS = 12 VVCC = 6 VRDS(TG)RDS(BG)BOOST TS = = = 12 VSUPPLY Voltage (V) DELAY (ns) = 25 CBOOST = VCCTS = GNDtPLH(TG)tPHL(TG)tPHL(BG)tPLH(BG)

10 55 255356595125 150 TEMPERATURE ( C)PROPAGATION DELAY (ns)32425244445 G1722122737471772tPLH(TG)tPHL(BG)VCC = BOOST = 6 VTS = GNDtPHL(TG)tPLH(BG)LTC4444-5644445fc PIN FUNCTIONSTYPICAL PERFORMANCE CHARACTERISTICSS witching Supply Current vs Input FrequencySwitching Supply Current vs Load CapacitanceTINP (Pin 1): High Side Input Signal. Input referenced to GND. This input controls the high side driver output (TG).BINP (Pin 2): Low Side Input Signal. This input controls the low side driver output (BG). VCC (Pin 3): Supply. This pin powers input buffers, logic and the low side gate driver output directly and the high side gate driver output through an external diode con-nected between this pin and BOOST (Pin 6). A low ESR ceramic bypass capacitor should be tied between this pin and GND (Pin 9).