100V N-Channel MOSFET - Alpha and Omega Semiconductor

1 AON7296100V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 66m RDS(ON) (at VGS= )< 90m 100% UIS Tested100% Rg TestedSymbolThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and device is ideal for boost converters and synchronousrectifiers for consumer, telecom, industrial power suppliesand LED Maximum Ratings TA=25 C unless otherwise noted100 VGDSTop View12348 765 DFN 3x3 EPTop View Bottom View Pin 1 SymbolVDSVGSIDMIASEASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A D5756 WPower Dissipation APDSMWTA=70 CTC=25 CPower Dissipation BPDATA=25 CIDSMATA=70 CTC=100 C25 Pulsed Drain Current CContinuous DrainCurrentmJAvalanche Current C4 Continuous energy L= CVMaximumUnitsParameterUnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameterTypMaxV 20 Gate-Source VoltageDrain-Source Voltage100 Maximum Junction-to-Ambient A C/WR JA306040 Rev 0: Sep.

2 2012 1 of 6 AON7296 SymbolMinTypMaxUnitsBVDSS100 VVDS=100V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold (ON)25A5466TJ=125 C1001227290m Qg(10V) ( ) (on)4nst2nsOn state drain currentID=250 A, VGS=0 VVGS=10V, VDS=5 VVGS=10V, ID=5 AGate-Body leakage currentReverse Transfer CapacitanceVGS=0V, VDS=50V, f=1 MHzVDS=VGS, ID=250 AVDS=0V, VGS= 20 VMaximum Body-Diode Continuous Current GInput CapacitanceOutput CapacitanceForward TransconductanceIS=1A,VGS=0 VVDS=5V, ID=5 ADYNAMIC PARAMETERSVGS= , ID=3 ARDS(ON)Static Drain-Source On-ResistanceDiode Forward Voltagem Electrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageTurn-On Rise TimeV=10V, V=50V, R=10 ,Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSTurn-On DelayTimeVGS=10V, VDS=50V, ID=5 Atr2nstD(off)15nstf2nstrr16nsQrr44nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , dI/dt=500A/ sBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=5A, dI/dt=500A/ sTurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=50V, RL=10 ,RGEN=3 Turn-Off Fall TimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s value and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150 C may be used if the PCB allows The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

4 C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev 0: Sep. 2012 2 of 6 AON7296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180510152012345ID( A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)304050607080901000246810 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)20406080100120140160246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=5A25 C125 C Rev 0: Sep. 2012 3 of 6 AON7296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS175210018024681002468 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0100200300400500020406080 100 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case CossCrssVDS=50 VID=5 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased 10 s10ms1msDCRDS(ON) TJ(Max)=150 CTC=25 C100 s40(Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseSafe Operating Area (Note F)R JC=6 C/W Rev 0: Sep.

6 2012 4 of 6 AON7296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180510152025025507 5100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)0510150255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 C110100110100 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=75 C/W Rev 0: Sep. 2012 5 of 6 AON7296 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr Rev 0: Sep.

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