1N4148; 1N4448 High-speed diodes - Nexperia

1 Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS. semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia , as shown below. Instead of , or , use Instead of or use (email). Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP (year). All rights reserved or Koninklijke Philips Electronics (year). All rights reserved Should be replaced with: - Nexperia (year).

2 All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS. DATA SHEET. M3D176. 1n4148 ; 1N4448 . High-speed diodes Product data sheet 2004 Aug 10. Supersedes data of 2002 Jan 23. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . FEATURES. Hermetically sealed leaded glass SOD27 (DO-35). package high switching speed : max. 4 ns k handbook, halfpage a General application Continuous reverse voltage: max. 100 V MAM246. Repetitive peak reverse voltage: max. 100 V. Repetitive peak forward current: max. 450 mA. The diodes are type branded. Simplified outline (SOD27; DO-35) and APPLICATIONS.)

3 Symbol. High-speed switching. DESCRIPTION. The 1n4148 and 1N4448 are High-speed switching diodes MARKING. fabricated in planar technology, and encapsulated in TYPE NUMBER MARKING CODE. hermetically sealed leaded glass SOD27 (DO-35). packages. 1n4148 1N4148PH or 4148PH. 1N4448 1N4448 . ORDERING INFORMATION. PACKAGE. TYPE NUMBER. NAME DESCRIPTION VERSION. 1n4148 hermetically sealed glass package; axial leaded; 2 leads SOD27. 1N4448 . 2004 Aug 10 2. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . LIMITING VALUES. In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT. VRRM repetitive peak reverse voltage 100 V. VR continuous reverse voltage 100 V. IF continuous forward current see ; note 1 200 mA.

4 IFRM repetitive peak forward current 450 mA. IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see t = 1 s 4 A. t = 1 ms 1 A. t=1s A. Ptot total power dissipation Tamb = 25 C; note 1 500 mW. Tstg storage temperature 65 +200 C. Tj junction temperature 200 C. Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS. Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT. VF forward voltage see 1n4148 IF = 10 mA 1 V. 1N4448 IF = 5 mA V. IF = 100 mA 1 V. IR reverse current VR = 20 V; see 25 nA. VR = 20 V; Tj = 150 C; see 50 A. IR reverse current; 1N4448 VR = 20 V; Tj = 100 C; see 3 A. Cd diode capacitance f = 1 MHz; VR = 0 V; see 4 pF. trr reverse recovery time when switched from IF = 10 mA to 4 ns IR = 60 mA; RL = 100.

5 Measured at IR = 1 mA; see Vfr forward recovery voltage when switched from IF = 50 mA; V. tr = 20 ns; see THERMAL CHARACTERISTICS. SYMBOL PARAMETER CONDITIONS VALUE UNIT. Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W. Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W. Note 1. Device mounted on a printed-circuit board without metallization pad. 2004 Aug 10 3. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . GRAPHICAL DATA. mbg451 MBG464. 300 600. handbook, halfpage IF IF. (mA) (mA). 200 400. (1) (2) (3). 100 200. 0 0. 0 100 200 0 1 2. Tamb ( C) VF (V). Device mounted on an FR4 printed-circuit board; lead length 10 mm. (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values.

6 (3) Tj = 25 C; maximum values. Maximum permissible continuous forward current as a function of ambient Forward current as a function of forward temperature. voltage. MBG704. 102. handbook, full pagewidth IFSM. (A). 10. 1. 10 1. 1 10 102 103 tp ( s) 104. Based on square wave currents. Tj = 25 C prior to surge. Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Aug 10 4. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . mgd290 MGD004. 103 handbook, halfpage IR Cd ( A) (pF). 102. (1) (2). 10. 1. 10 1. 10 2 0 100 200 0 10 20. Tj ( C) VR (V). (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. f = 1 MHz; Tj = 25 C. Reverse current as a function of junction diode capacitance as a function of reverse temperature.

7 Voltage; typical values. 2004 Aug 10 5. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . handbook, full pagewidth tr tp t 10%. RS = 50 IF IF t rr SAMPLING t OSCILLOSCOPE. V = VR I F x R S R i = 50 . 90% (1). VR. MGA881. input signal output signal (1) IR = 1 mA. Reverse recovery voltage test circuit and waveforms. I 1 k 450 . I V. 90%. R S = 50 . OSCILLOSCOPE V fr R i = 50 . 10%. MGA882 t t tr tp input output signal signal Forward recovery voltage test circuit and waveforms. 2004 Aug 10 6. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . PACKAGE OUTLINE. Hermetically sealed glass package; axial leaded; 2 leads SOD27. (1). b D L G1 L. DIMENSIONS (mm are the original dimensions). G1 0 1 2 mm b D L. UNIT. max. max. max. min. scale mm Note 1.

8 The marking band indicates the cathode. OUTLINE REFERENCES EUROPEAN. ISSUE DATE. VERSION IEC JEDEC JEITA PROJECTION. 97-06-09. SOD27 A24 DO-35 SC-40. 05-12-22. 2004 Aug 10 7. NXP Semiconductors Product data sheet High-speed diodes 1n4148 ; 1N4448 . DATA SHEET STATUS. DOCUMENT PRODUCT. DEFINITION. STATUS(1) STATUS(2). Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.

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