2N7002 60 V, 300 mA N-channel Trench MOSFET

1 1. Product General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET Features and benefits Suitable for logic level gate drivesources Very fast switching Surface-mounted package Trench MOSFET Applications Logic level translators High-speed line Quick reference data 2. Pinning information 2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 8 September 2011 Product data sheetTable reference dataSymbolParameterConditionsMinTypMaxUn itVDSdrain-source voltage25 C Tj 150 C--60 VIDdrain currentVGS=10V; Tsp=25 C; see Figure 1; see Figure 3--300mAPtottotal power dissipationTsp=25 C; see Figure characteristicsRDSondrain-source on-state resistanceVGS=10V; ID=500mA; Tj=25 C; see Figure 6; see Figure Table informationPinSymbolDescriptionSimplifie d outlineGraphic symbol1 GgateSOT23 (TO-236AB)2 Ssource3 Ddrain123 SDGmbb076 Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev.

2 7 8 September 20112 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET3. Ordering information 4. Marking [1]% = placeholder for manufacturing site code5. Limiting values Table informationType numberPackageNameDescriptionVersion2N700 2TO-236 ABplastic surface-mounted package; 3 leadsSOT23 Table codesType numberMarking code[1]2N700212%Table valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUn itVDSdrain-source voltage25 C Tj 150 C-60 VVDGR drain-gate voltage25 C Tj 150 C; RGS=20k -60 VVGS gate-source voltage-3030 VVGSM peak gate-source voltagepulsed; tp 50 s; = currentVGS=10V; Tsp=25 C; see Figure 1; see Figure 3-300mAVGS=10V; Tsp= 100 C; see Figure 1-190mAIDM peak drain currentpulsed; tp 10 s; Tsp=25 C; see Figure power dissipationTsp=25 C; see Figure temperature-65150 CTstgstorage temperature-65150 CSource-drain diodeISsource currentTsp= 25 C-300mAISM peak source currentpulsed; tp 10 s; Tsp=25 Nexperia 2017.

3 All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20113 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFETFig continuous drain current as a function of solder point temperatureFig total power dissipation as a function of solder point temperatureFig operating area; continous and peak drain currents as a function of drain-source voltageTsp ( C)02001505010003aa254080120 Ider(%)0 Tsp ( C)02001505010003aa174080120 Pder(%)0003aab35010-210-1 1 10 1 10 102 VDS (V)ID(A)DC1 ms100 sLimit RDSon = VDS / ID10 ms100 ms10 stp = Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20114 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET6. Thermal characteristics Table characteristicsSymbolParameterConditions MinTypMaxUnitRth(j-a)thermal resistance from junction to ambientMounted on a printed-circuit board; minimum footprint ; vertical in still air--350K/WRth(j-sp)thermal resistance from junction to solder pointsee Figure 4--150K/WFig thermal impedance from junction to solder point as a function of pulse duration003aab351 1 10 102 10310-510-410-310-210-1 1 10tp (s)Zth(j-sp) (K/W)single = = Nexperia 2017.

4 All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20115 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET7. Characteristics Table characteristicsV(BR)DSSdrain-source breakdown voltageID=10 A; VGS=0V; Tj=25 C60--VID=10 A; VGS=0V; Tj= -55 C55--VVGS thgate-source threshold voltageID= ; VDS=VGS; Tj=25 C; see Figure 9; see Figure ; VDS=VGS; Tj=150 C; see Figure 9; see Figure ; VDS=VGS; Tj=-55 C; see Figure 9; see Figure leakage currentVDS=48V; VGS=0V; Tj= 25 AVDS=48V; VGS=0V; Tj=150 C--10 AIGSS gate leakage currentVGS=15V; VDS=0V; Tj= 25 C-10100nAVGS=-15V; VDS=0V; Tj= 25 C-10100nARDS ondrain-source on-state resistanceVGS=10V; ID=500mA; Tj=25 C; see Figure 6; see Figure VGS=10V; ID=500mA; Tj= 150 C; see Figure 6; see Figure VGS= ; ID=75mA; Tj=25 C; see Figure 6; see Figure Dynamic characteristicsCissinput capacitanceVDS=10V; f=1 MHz; VGS=0V; Tj=25 C- 3150pFCossoutput transfer timeVGS=10V; VDS=50V; RL= 250 ; RG(ext)=50 ; RGS=50 time-1115nsSource-drain diodeVSDsource-drain voltageIS=300mA; VGS=0V; Tj=25 C.

5 See Figure chargeVGS=0V; IS= 300 mA; dIS/dt = -100 A/ s-30-nCtrrreverse recovery time-30-ns Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20116 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFETFig characteristics: drain current as a function of drain-source voltage; typical valuesFig on-state resistance as a function of drain current; typical valuesFig characteristics: drain current as a function of gate-source voltage; typical valuesFig drain-source on-state resistance factor as a function of junction (V)ID(A) (V) = (A)RDSon(m ) (V) = (V)ID(A)Tj = 150 C25 CTj ( C) Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20117 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFETFig threshold voltage as a function of junction temperatureFig 10.

6 Sub-threshold drain current as a function of gate-source voltageFig 11. Source current as a function of source-drain voltage; typical valuesFig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values003aab1010123-60060120180Tj ( C)VGS(th)(V)mintypmax003aab10010-610-510 -410-30123 VGS (V)ID(A) (V)IS(A)Tj = 25 C150 C003aab357 1 10 10210-1 1 10 102 VDS (V)C (pF)CissCrssCoss Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 20118 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET8. Package outlineFig 13. Package outline SOT23 (TO-236AB) e1 HELpQwv REFERENCESOUTLINEVERSIONEUROPEANPROJECTI ONISSUE DATE04-11-0406-03-16 IEC JEDEC (mm are the original dimensions) SOT23TO-236 ABbpDe1eAA1 LpQdetail XHEEwMvMABAB012 surface-mounted package; 3 leadsSOT23 Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev.

7 7 8 September 20119 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET9. SolderingFig 14. Reflow soldering footprint for SOT23 (TO-236AB)Fig 15. Wave soldering footprint for SOT23 (TO-236AB)solder landssolder resistoccupied areasolder (3 ) (3 ) (3 ) (3 ) in mmsolder landssolder resistoccupied areapreferred transport direction during (2 ) (2 ) in mm Nexperia 2017. All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 201110 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET10. Revision history Table historyDocument IDRelease dateData sheet statusChange noticeSupersedes2N7002 data sheet- 2N7002 : The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP S emiconductors. Legal texts have been adapted to the new company name where data sheet2N7002 data sheet2N7002 data sheet2N7002 specificationHZG3362N7002 specification2N7002 specification-- Nexperia 2017.

8 All rights reserved2N7002 All information provided in this document is subject to legal data sheetRev. 7 8 September 201111 of 13 Nexperia2N700260 V, 300 mA N-channel Trench MOSFET11. Legal Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL DefinitionsPreview The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such The document is a draft version only.

9 The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing.

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