30V P-Channel MOSFET

1 AON740530V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS= -10V)-50A RDS(ON) (at VGS= -10V)< RDS(ON) (at VGS = -6V)< 100% UIS Tested100% Rg TestedSymbolVDS-30 VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate device is ideal for load switch and battery protectionapplications. RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise notedDrain-Source Voltage-30 DFN EPTop View Bottom Pin 1 Top View12348765 GDSVDSVGSIDMIAR, IASEAR, EASTJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JCThermal CharacteristicsMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation BWPower Dissipation APDSMWTA=70 C834TA=25 CATA=70 C-25ID-50-39TC=25 CTC=100 CA-44AV 25 Gate-Source VoltageContinuous DrainCurrentGTA=25 CIDSMVD rain-Source Voltage-30 Maximum Junction-to-Ambient A C/WR JA164520 C-210 Pulsed Drain Current CUnitsRepetitive avalanche energy L= CmJAvalanche Current C-20 Continuous DrainCurrent97 ParameterTypMaxTC=25 CJunction and Storage Temperature Range-55 to 150PD 0.

3 May 1 of 6 AON7405 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON) , ID= Qg(10V)334251nCQg( ) Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID=-20 AReverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 25 VZero Gate Voltage Drain CurrentGate-Body leakage currentForward TransconductanceDiode Forward VoltageRDS(ON)Static Drain-Source On-Resistancem IS=-1A,VGS=0 VVDS=-5V, ID=-20 AVGS= , ID=-10 AGate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=-10V, VDS=-15V, ID=-20 AGate Source ChargeGate Drain ChargeTotal Gate ChargeMaximum Body-Diode Continuous CurrentGInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERStD(on)

4 (off)104nstf78nstrr202530nsQrr374757nCTH IS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery TimeIF=-20A, dI/dt=500A/ sTurn-Off Fall TimeBody Diode Reverse Recovery ChargeIF=-20A, dI/dt=500A/ sTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-15V,RL= , RGEN=3 A.

5 The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JA t 10s value and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C.

6 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedence from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating.

7 G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : May 2 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001201 23456-ID(A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)3456789051015202530 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs.

8 Junction Temperature (Note E)VGS=-6 VID=-20 AVGS=-10 VID=-20A25 C125 CVDS=-5 VVGS=-6 VVGS=-10V020406080100120012345-ID(A)-VDS (Volts)Fig 1: On-Region Characteristics (Note E)VGS= ,-8V, + + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 125 C(Note E)159131721345678910 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=-20A25 125 : May 3 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810010203040 50-VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030003 5004000051015202530 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-CossCrssVDS=-15 VID=-20 ATJ(Max)=150 CTC=25 C10 (Amps)-VDS(Volts)Figure 9.

9 Maximum Forward Biased Safe 10 sDCRDS(ON) TJ(Max)=150 CTC=25 C100 s1ms40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseFigure 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W : May 4 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100181010010001101001 000-IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)01020304050607080900255075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)01020304050600255075100125150-Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F)TA=25 (W)Pulse Width (s)Figure 15.

10 Single Pulse Power Rating Junction-to-TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W : May 5 of 6 AON7405 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VIdVdsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL2E = 1/2 LIARARBVVDCDUTVddVgsVdsVgsRLRgResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on)VddVgsVgsRgDUTVDCVgsIdVgs-+BVDSSI ARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-I : May 6 of 6