DMG2305UX - Diodes Incorporated

1 DMG2305UX Document number: DS36196 Rev. 7 - 2 1 of 6 September 2018 Diodes Incorporated DMG2305UX P- channel ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max Package ID Max TA = +25 C -20V 52m @VGS = SOT23 100m @VGS = Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting Power Management Functions DC-DC Converters Motor Control Features Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMG2305 UXQ) Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: grams (Approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DMG2305UX -7 Standard SOT23 3,000/Tape & Reel DMG2305UX -13 Standard SOT23 10,000/Tape & Reel Notes: 1.

3 No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Date Code Key Year 2009 ~ 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 Code W ~ D E F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View DGSI nternal Schematic Top View 23X = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: F = 2018) M = Month (ex: 9 = September) 23 XYMDSG DMG2305UX Document number: DS36196 Rev.

4 7 - 2 2 of 6 September 2018 Diodes Incorporated DMG2305UX Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 8 V Continuous Drain Current (Note 5) VGS = Steady State TA = +25 C TA = +70 C ID A t<10s TA = +25 C TA = +70 C ID A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) (Note 6) IDM -15 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient (Note 5) Steady State R JA 90 C/W t<10s 64 C/W Thermal Resistance, Junction to Case (Note 7)

5 R JC 33 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current TJ = +25 C IDSS A VDS = -20V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS(ON)

6 40 52 m VGS = , ID = 52 100 VGS = , ID = 68 200 VGS = , ID = -2A Forward Transfer Admittance |YFS| 9 s VDS = -5V, ID = -4A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 808 pF VDS = -15V, VGS = 0V f = Output Capacitance Coss 85 pF Reverse Transfer Capacitance Crss 77 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Qg nC VGS = , VDS = -4V, ID = Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Turn-On Delay Time tD(ON) ns VDS = -4V, VGS = , Rg = 6 , ID = -1A Turn-On Rise Time tR ns Turn-Off Delay Time tD(OFF) ns Turn-Off Fall Time tF ns Notes: 5.

7 Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG2305UX Document number: DS36196 Rev. 7 - 2 3 of 6 September 2018 Diodes Incorporated DMG2305UX -V , DRAIN-SOURCE VOLTAGE (V)Figure 1 Typical Output CharacteristicsDS-I, DRAIN CURRENT (A) V= V= V= V= V= V= V= -I , DRAIN SOURCE CURRENT (A)Figure 3 Typical On-Resistance vs.

8 Drain Current and Gate Voltage DR, DRAIN-SOURCE ON-RESISTANCE ()DS(ON) = = , DRAIN SOURCE CURRENT (A)Figure 4 Typical On-Resistance vs. Drain Current and Temperature DR, DRAIN-SOURCE ON-RESISTANCE ()DS(ON) = -55 AT = 25 AT = 85 AT = 125 AT = 150 AV= -50-250255075100125150T , JUNCTION TEMPERATURE ( C)J Figure 5 On-Resistance Variation with TemperatureR, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)DS(ON) = = -10 AGSDV = = , JUNCTION TEMPERATURE ( C)J Figure 6 On-Resistance Variation with TemperatureR, DRAIN-SOURCE ON-RESISTANCE ()DS(on) =AGSD -5V=5VI =AGSD -4.

9 -10-V , GATE-SOURCE VOLTAGE (V) GS Figure 2 Typical Transfer Characteristics - I , D R A I N C U R R E N T ( A ) D 0 5 10 15 20 0 1 2 3 T = 150 C A T = 125 C A T = 85 C A T = 25 C A T = -55 C A V = DS -ID, DRAIN CURRENT (A) C TA=150 C TA=85 C TA=25 C TA=-55 C DMG2305UX Document number: DS36196 Rev. 7 - 2 4 of 6 September 2018 Diodes Incorporated DMG2305UX -50-250255075100125150T , AMBIENT TEMPERATURE ( )Figure 7 Gate Threshold Variation vs. Ambient TemperatureAV, GATE THRESHOLD VOLTAGE (V)GS(TH) = 1mAD -I = 250 D -V , SOURCE-DRAIN VOLTAGE (V)Figure 8 Diode Forward Voltage vs.

10 CurrentSD-I, SOURCE CURRENT (A)ST = 25 CA A ( C) - , DRAIN CURRENT (A)-VDS, DRAIN-SOURCE VOLTAGE (V)Figure 9. SOA, Safe Operation AreaPW=10s PW=10msPW=100 sDCRDS(ON) LimitedPW=1msPW=100msTJ(Max) = 150 C TC = 25 CSingle PulseDUT on 1*MRP BoardVGS= -10 VPW=1s DMG2305UX Document number: DS36196 Rev. 7 - 2 5 of 6 September 2018 Diodes Incorporated DMG2305UX Package Outline Dimensions Please see for the latest version.