AO3400 Rev8 RoHS

1 AO340030V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 28m RDS(ON) (at VGS = )< 33m RDS(ON) (at VGS = )< 52m SymbolVDSThe AO3400 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as aload switch or in PWM Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G DSSOT23 Top View Bottom View DGSGSDVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentVV 12 Gate-Source VoltageDrain-Source Voltage30 ParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CWG DSSOT23 Top View Bottom View DGSGSD Rev 8.

2 Dec 1 of 5 AO3400 SymbolMinTypMaxUnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS100nAVGS(th)Gate Threshold (ON)30A1828TJ=125 C28391933m 2452m (on) Transfer CapacitanceVGS=0V, VDS=15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageOn state drain currentID=250 A, VGS=0 VVGS= , VDS=5 VVGS=10V, ID= TransconductanceDiode Forward VoltageIS=1A,VGS=0 VVDS=5V, ID= , ID=4 AVGS= , ID=5 ARDS(ON)Static Drain-Source On-ResistanceIDSS AVDS=VGS ID=250 AVDS=0V, VGS= 12 VZero Gate Voltage Drain CurrentGate-Body leakage currentm Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS= , VDS=15V, ID= Source ChargeGate Drain ChargeMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeV=10V, V=15V, R= , (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , dI/dt=100A/ sBody Diode Reverse Recovery TimeTurn-Off Fall TimeBody Diode Reverse Recovery ChargeIF= , dI/dt=100A/ sTurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=15V, RL= ,RGEN=3 A. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.

4 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 8: Dec 2 of 5 AO3400 TYPICAL ELECTRICAL AND THERMAL (A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)101520253005101520 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= (A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)101520253005101520 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= (ON)(m )VGS(Volts)Figure 5: On-Resistance vs.

5 Gate-Source Voltage (Note E)25 C125 CVDS=5 VVGS= C125 C0510152025303540012345ID(A)VDS(Volts)Fi g 1: On-Region Characteristics (Note E)VGS= Rev 8: Dec 3 of 5 AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS01234502468 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800100005101520 2530 Capacitance (pF)VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)TA=25 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 s10ms01234502468 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800100005101520 2530 Capacitance (pF)VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)TA=25 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single pulsed =Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=125 C/W Rev 8.

6 Dec 4 of 5 AO3400 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & WaveformD U TV g sD io d e R e c o v e ry T e s t C ircu it & W a v e fo rm sV d s +rrQ = - Id tt-+V D CD U TV d dV g sV d sV g sR LR gV g sV d s1 0 %9 0 %R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm sttrd ( o n )to ntd ( o ff)tfto ff-+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & WaveformIgV g s-+V D CD U TLV g sV d sIsdIsdD io d e R e c o v e ry T e s t C ircu it & W a v e fo rm sV d s -V d s +IFd I/d tIR MrrV d dV d dQ = - Id ttrr-+V D CD U TV d dV g sV d sV g sR LR gV g sV d s1 0 %9 0 %R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm sttrd ( o n )to ntd ( o ff)tfto ff Rev 8: Dec 5 of 5