AO4419 Rev6 Rohs-HUP005A

1 AO441930V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V)< 20m RDS(ON) (at VGS = )< 35m 100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JL CThermal Junction-to-Ambient A2TA=70 CJunction and Storage Temperature Range-55 to 150 C/WR JA315940 UnitsParameterTypMaxV 20 Gate-Source VoltageDrain-Source Voltage-30 The AO4419 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is ideal for load switchand battery protection Maximum Ratings TA=25 C unless otherwise Current C36A-27TA=25 CTA=70 CPower Dissipation BPDA valanche energy L= CPulsed Drain Current CContinuous DrainCurrentTA=25 CMaximum Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D167524 GDSSOIC-8 Top View Bottom ViewDDDDSSSG Rev 6: May 2011 1 of 6 AO4419 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON) C24292635m Qg(10V)19nCQg( ) (on) (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

2 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT ,VGS=0 VVDS=-5V, ID= , dI/dt=500A/ sSWITCHING PARAMETERSM aximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeReverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzPulsed Body-Diode CurrentCBody Diode Reverse Recovery ChargeIF= , dI/dt=500A/ sTurn-Off DelayTimeVGS=-10V, VDS=-15V, ID= Source ChargeGate Drain ChargeTotal Gate ChargeGate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-Off Fall TimeTotal Gate ChargeRDS(ON)

3 Static Drain-Source On-ResistanceIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentGate-Body leakage currentm Body Diode Reverse Recovery TimeDrain-Source Breakdown VoltageID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID= state drain currentVGS= , ID=-7 AForward TransconductanceDiode Forward VoltageVGS=-10V, VDS=-15V, RL= ,RGEN=3 Electrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsA. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. Thevalue in any given application depends on the user's specific board The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keepinitialTJ=25 The R JA is the sum of the thermal impedence from junction to lead R JL and lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 6: May 2011 2 of 6 AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100184001020304001234 5-VGS(Volts)Figure 2: Transfer Characteristics (Note E)-ID(A)10152025303505101520-ID (A)Figure 3: On-Resistance vs.

5 Drain Current andGate Voltage (Note E)RDS(ON) (m ) + + + (Volts)Figure 6: Body-Diode Characteristics (Note E)-IS (A)25 C125 ( C)Figure 4: On-Resistance vs. Junction Temperature(Note E)Normalized On-ResistanceVGS= (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage(Note E)RDS(ON) (m )25 C125 CVDS=-5 VVGS= C125 C0102030405060012345-VDS (Volts)Fig 1: On-Region Characteristics (Note E)-ID (A)VGS= Rev 6: May 2011 3 of 6 AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS024681005101520Qg (nC)Figure 7: Gate-Charge Characteristics-VGS (Volts)020040060080010001200140016000510 15202530-VDS (Volts)Figure 8: Capacitance CharacteristicsCapacitance (pF)CissCossCrssVDS=-15 VID= Width (s)Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)Power (W)TA=25 (Volts)-ID (Amps)Figure 10.

6 Maximum Forward Biased SafeOperating Area (Note F)10 s10s1msDCRDS(ON)limitedTJ(Max)=150 CTA=25 C100 s10ms1101001101001000 Time in avalanche, tA ( s)Figure 9: Single Pulse Avalanche capability (NoteC)-IAR (A) Peak Avalanche CurrentTA=150 CTA=25 CTA=100 CTA=125 C Rev 6: May 2011 4 of 6 AO4419 TYPICAL ELECTRICAL AND THERMAL Width (s)Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)Z JA Normalized TransientThermal ResistanceSingle PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=75 C/W Rev 6: May 2011 5 of 6 AO4419 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsRgDUTVDCVgsVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-IVDCDUTVddVgsVdsVgsRLR gResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) Rev 6: May 2011 6 of 6