Fabrication and Manufacturing (Basics)
• n-well is formed with diffusion or ion implantation • Diffusion – Place wafer in furnace with arsenic gas – Heat until As atoms diffuse into exposed Si • Ion Implanatation – Blast wafer with beam of As ions – Ions blocked by SiO 2, only enter exposed Si n well SiO 2.
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Implantation, Ion implantation
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