General Description Product Summary

1 AOD4184A. 40V N-Channel MOSFET. General Description Product Summary The AOD4184A combines advanced trench MOSFET VDS 40V. technology with a low resistance package to provide ID (at VGS=10V) 50A. extremely low RDS(ON). This device is well suited for high RDS(ON) (at VGS=10V) < 7m . current load applications. RDS(ON) (at VGS = ) < . 100% UIS Tested 100% Rg Tested TO252. DPAK D. Top View Bottom View D. D. G. S G. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 40 V. Gate-Source Voltage VGS 20 V. Continuous Drain TC=25 C 50. ID. Current G TC=100 C 40 A. C. Pulsed Drain Current IDM 120. Continuous Drain TA=25 C 13.

2 IDSM A. Current TA=70 C 10. Avalanche Current C IAS, IAR 35 A. C. Avalanche energy L= EAS, EAR 61 mJ. TC=25 C 50. B PD W. Power Dissipation TC=100 C 25. TA=25 C PDSM W. Power Dissipation A TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 175 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 18 22 C/W. AD R JA. Maximum Junction-to-Ambient Steady-State 44 55 C/W. Maximum Junction-to-Case Steady-State R JC 3 C/W. Rev0 : Sep 2009 Page 1 of 6. AOD4184A. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 40 V.

3 VDS=40V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS=10V, VDS=5V 120 A. VGS=10V, ID=20A 7. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 12. VGS= , ID=15A m . gFS Forward Transconductance VDS=5V, ID=5A 37 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current 20 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 1200 1500 1800 pF. Coss Output Capacitance VGS=0V, VDS=20V, f=1 MHz 150 215 280 pF. Crss Reverse Transfer Capacitance 80 135 190 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 2 5.

4 SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 21 27 33 nC. Qg( ) Total Gate Charge 10 14 17 nC. VGS=10V, VDS=20V, ID=20A. Qgs Gate Source Charge 3 5 6 nC. Qgd Gate Drain Charge 3 6 9 nC. tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1 , 17 ns tD(off) Turn-Off DelayTime RGEN=3 30 ns tf Turn-Off Fall Time 17 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/ s 20 29 38 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/ s 18 26 34 nC. A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150 C.

5 The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max.

6 F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. THIS Product HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

7 AOS RESERVES THE RIGHT TO IMPROVE Product DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Sep 2009 Page 2 of 6. AOD4184A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 100 100. 10V. VDS=5V. 5V 4V. 80 80. 60 60. ID (A). ID(A). 40 40. 125 C. VGS= 20 20. 25 C. 0 0. 0 1 2 3 4 5 2 3 4 VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 9 Normalized On-Resistance 2. 8 VGS= VGS=10V. ID=20A. RDS(ON) (m ). 7. 17. 5. 6. 2. VGS=10V. VGS= 5 ID=15A. 1. 4 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200. ID (A). Temperature ( C) 0. Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 18. Figure 4: On-Resistance vs.

8 Junction Temperature (Note E). 25 +02. ID=20A. +01. 20. 40. +00. RDS(ON) (m ). 15 125 C. IS (A). 125 C. 10 25 C. 5 25 C 0 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 0: Sep 2009 Page 3 of 6. AOD4184A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 2500. VDS=20V. ID=20A. 8 2000. Ciss Capacitance (pF). VGS (Volts). 6 1500. 4 1000. Coss 2 500. Crss 0 0. 0 5 10 15 20 25 30 0 10 20 30 40. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 900. 10 s 10 s TJ(Max)=175 C. RDS(ON) TC=25 C. 600. limited Power (W). ID (Amps).

9 100 s 17. DC 1ms 5. 10ms 2. 300 10. TJ(Max)=175 C. TC=25 C. 0. 1 10 100 1E-05 1 10. VDS (Volts) 0. Pulse Width (s). Figure 9: Maximum Forward Biased Safe 18. Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) Case (Note F). 10. D=Ton/T In descending order D= , , , , , , single pulse Z JC Normalized Transient TJ,PK=TC+ JC. Thermal Resistance R JC=3 C/W 40. 1. PD. Ton Single Pulse T. 1 10 100. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 0: Sep 2009 Page 4 of 6. AOD4184A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 100 60. TA=25 C. IAR (A) Peak Avalanche Current TA=100 C 50. Power Dissipation (W).

10 40. TA=125 C 30. TA=150 C. 20. 10. 10 0. 1 10 100 1000 0 25 50 75 100 125 150 175. Time in avalanche, tA ( s) TCASE ( C). Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F). C). 60 10000. 50 TA=25 C. 1000. Current rating ID(A). 40. 17. Power (W). 30 100 5. 2. 20 10. 10. 10. 0 1. 0 25 50 75 100 125 150 175 10 0 1000. TCASE ( C) Pulse Width (s) 18. Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H). 10. D=Ton/T In descending order D= , , , , , , single pulse Z JA Normalized Transient TJ,PK=TA+ JA. Thermal Resistance 1 R JA=55 C/W 40. PD. Ton Single Pulse T. 1 10 100 1000. Pulse Width (s).