PD - 91385B IRF5305 - redrok.com

1 IRF5305 HEXFET Power MOSFETPD - 91385 BFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power mosfets are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the @ TC = 25 CContinuous Drain Current, VGS @ -10V-31ID @ TC = 100 CContinuous Drain Current, VGS @ -10V-22 AIDMP ulsed Drain Current -110PD @TC = 25 CPower Dissipation110 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 280mJIARA valanche Current -16 AEARR epetitive Avalanche Energy 11mJdv/dtPeak diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 srew10 lbf in ( m)

2 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal ResistanceVDSS = -55 VRDS(on) = ID = -31 ATO-220 ABlAdvanced Process TechnologylDynamic dv/dt Ratingl175 C Operating TemperaturelFast SwitchinglP-ChannellFully Avalanche RatedDescription3/3 Units ConditionsISContinuous Source CurrentMOSFET symbol( body diode ) showing theISMP ulsed Source Currentintegral reverse( body diode ) p-n junction Forward Voltage = 25 C, IS = -16A, VGS = 0V trrReverse Recovery Time 71110nsTJ = 25 C, IF = -16 AQrrReverse RecoveryCharge 170250nCdi/dt = -100A/ s Source-Drain Ratings and Units ConditionsV(BR)DSSD rain-to-Source Breakdown Voltage-55 VVGS = 0V, ID = -250 A V(BR)DSS/ TJBreakdown Voltage Temp.

3 Coefficient V/ CReference to 25 C, ID = -1mARDS(on)Static Drain-to-Source On-Resistance VGS = -10V, ID = -16A VGS(th)Gate Threshold = VGS, ID = -250 AgfsForward SVDS = -25V, ID = -16A -25 AVDS = -55V, VGS = 0V -250 VDS = -44V, VGS = 0V, TJ = 150 CGate-to-Source Forward Leakage 100 VGS = 20 VGate-to-Source Reverse Leakage -100nAVGS = -20 VQgTotal Gate Charge 63ID = -16 AQgsGate-to-Source Charge 13nCVDS = -44 VQgdGate-to-Drain ("Miller") Charge 29 VGS = -10V, See Fig. 6 and 13 td(on)Turn-On Delay Time 14 VDD = -28 VtrRise Time 66 ID = -16 Atd(off)Turn-Off Delay Time 39 RG = tfFall Time 63 RD = , See Fig.

4 10 Between lead, 6mm ( )from packageand center of die contactCissInput Capacitance 1200 VGS = 0 VCossOutput Capacitance 520 pFVDS = -25 VCrssReverse Transfer Capacitance 250 = , See Fig. 5nHElectrical Characteristics @ TJ = 25 C (unless otherwise specified)LDInternal Drain InductanceLSInternal Source Inductance Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt -280A/ s, VDD V(BR)DSS, TJ 175 CNotes: VDD = -25V, starting TJ = 25 C, L = RG = 25 , IAS = -16A. (See Figure 12) Pulse width 300 s; duty cycle 2%. 4.

5 Normalized On-ResistanceVs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 3. Typical Transfer 20 s PULSE W IDTH T = 25 CcA-I , D rain-to-S ource C urrent (A )-V , Drain-to-Source Voltage (V) VGS TO P - 15V - 10V - - - - - BOT TOM - , Drain-to-Source Current (A)-V , D rain-to-Source Voltage (V) VGS TOP - 15V - 10V - - - - - BOTTOM.

6 5 V 20 s PULSE W IDTH T = 175 CC11010045678910T = 25 CJT = 175 CJA V = -25V 20 s PULSE W IDTH DSGS-V , Gate-to-Source Voltage (V)D-I , Drain-to-Source C urrent (A) 120 140 160 180JT , Junction Temperature ( C)R , Drain-to-Source On ResistanceDS(on)(N orm alized)A I = -27A V = -10V 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge VoltageFig 5. Typical Capacitance VoltageFig 7. Typical Source-Drain DiodeForward Voltage05001000150020002500110100C, Capacitance (pF)AV = 0V , f = 1M H zC = C + C , C SH OR TE DC = CC = C + CGSiss gs gd dsrs s gdoss ds gdC issC ossC rssDS-V , D rain-to-Source Voltage (V)0481216200 102030405060Q , Total G ate C harge (nC)GA FOR TEST CIRCUIT S EE FIGUR E 13 V = -44V V = -28VI = -16 AGS-V , G ate-to-S ource V oltage (V) = 25 CJV = 0V GSSDSDA-I , Reverse Drain Current (A)-V , Source-to-D rain Voltage (V)

7 T = 175 CJ1101001000110100 OPE RATION IN THIS AR EA LIM ITE D BY RDS(on)100 s1m s10msA T = 25 C T = 175 C Single P u ls eCJDS-V , D rain-to-Source Voltage (V)D-I , Drain Current (A) 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig 9. Maximum Drain Current TemperatureVDS-10 VPulse Width 1 sDuty Factor % (on)trtd(off)tf+-25507510012515017505101 520253035T , Case Temperature( C)-I , Drain Current (A) 1 :1. Duty factor D =t / t2. Peak T=Px Z+ T12 JDMthJCCPttDM12t , Rectangular Pulse Duration (sec)Thermal Response(Z ) = PULSE(THERMAL RESPONSE) 13b.

8 Gate Charge Test CircuitFig 13a. Basic Gate Charge WaveformFig 12c. Maximum Avalanche EnergyVs. Drain F50K .2 F12 VCurrent RegulatorSame Type as Sampling Resistors+-01002003004005006007002550751 00125150175JE , Single Pulse Avalanche Energy (mJ)ASAS tarting T , Junction Temperature ( C) V = -25V ITO P -11 ABOTTOM -16 ADDDFig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test CircuittpV(BR) + diode Recovery dv/dt Test Recoverydv/dtRipple 5% body diode Forward DropRe-AppliedVoltageReverseRecoveryCurr entBody diode ForwardCurrentVGS=10 VVDDISDD river Gate VDSW aveformInductor CurentD = P.

9 W .Period+-+++--- RGVDD dv/dt controlled by RG ISD controlled by Duty Factor "D" - Device Under Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer * Reverse Polarity for P-Channel** Use P-Channel Driver for P-Channel Measurements*VGS**[ ][ ]** VGS = for Logic Level and 3V Drive Devices[ ] **Fig 14. For P-Channel ASSIGNMENTS 1 - G ATE 2 - D R AIN 3 - SO U RC E 4 - D R AIN- B (.052) (.048) (.022) (.018) (.115) (.104) (.185) (.165) (.037) (.027) (.160) (.140) (.045) M (.255) (.240) (.149) (.)

10 139)- A (.415) (.405) (.113) (.103) (.600) (.584) (.555) (.530) (.055) (.045) (.100) (.014) M B A M41 2 3 NOTES: 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE NUMBERIN TE R N AT IO N AL R EC TIFIE R L O G OEXAMPLE : THIS IS AN IRF1010 W ITH A SS E M BL Y L O T C O D E 9 B 1M ASSEMBLY L OT C O D EDATE CODE (YYW W )YY = YEARWW = WEEK9246 IRF10109B 1 MAPart Marking InformationTO-220 ABPackage OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)WORLD HEADQUARTERS: 233 Kansas St.