General Description Product Summary - Alpha and Omega ...

1 AOT16N50/AOTF16N50. 500V, 16A N-Channel MOSFET. General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated VDS 600V@150 . using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A. designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < . robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT16N50L & AOTF16N50L. TO-220 Top View TO-220F. D. G G G. D D. S S S. AOT16N50 AOTF16N50.

2 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT16N50 AOTF16N50 Units Drain-Source Voltage VDS 500 V. Gate-Source Voltage VGS 30 V. Continuous Drain TC=25 C 16 16*. ID. Current TC=100 C 11 11* A. Pulsed Drain Current C IDM 64. Avalanche Current C IAR 6 A. Repetitive avalanche energy C EAR 540 mJ. Single plused avalanche energy G EAS 1080 mJ. Peak diode recovery dv/dt dv/dt 5 V/ns TC=25 C 278 W. PD. Power Dissipation B Derate above 25oC W/ oC. Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 C. Thermal Characteristics Parameter Symbol AOT16N50 AOTF16N50 Units Maximum Junction-to-Ambient A,D R JA 65 65 C/W.

3 Maximum Case-to-sink A R CS -- C/W. Maximum Junction-to-Case R JC C/W. * Drain current limited by maximum junction temperature. Rev3: Jul 2011 Page 1 of 6. AOT16N50/AOTF16N50. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. ID=250 A, VGS=0V, TJ=25 C 500. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V, TJ=150 C 600 V. BVDSS Breakdown Voltage Temperature Coefficient ID=250 A, VGS=0V V/ oC. / TJ. VDS=500V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. VDS=400V, TJ=125 C 10. IGSS Gate-Body leakage current VDS=0V, VGS= 30V 100 n . VGS(th) Gate Threshold Voltage VDS=5V, ID=250 A 4 V.

4 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A . gFS Forward Transconductance VDS=40V, ID=8A 20 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current 16 A. ISM Maximum Body-Diode Pulsed Current 64 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 1531 1914 2297 pF. Coss Output Capacitance VGS=0V, VDS=25V, f=1 MHz 153 191 229 pF. Crss Reverse Transfer Capacitance 11 16 20 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg Total Gate Charge 34 51 nC. Qgs Gate Source Charge VGS=10V, VDS=400V, ID=16A 11 nC. Qgd Gate Drain Charge 16 24 nC. tD(on) Turn-On DelayTime 44 ns tr Turn-On Rise Time VGS=10V, VDS=250V, ID=16A, 84 ns tD(off) Turn-Off DelayTime RG=25 92 ns tf Turn-Off Fall Time 50 ns trr Body Diode Reverse Recovery Time IF=16A,dI/dt=100A/ s,VDS=100V 265 334 400 ns Qrr Body Diode Reverse Recovery Charge IF=16A,dI/dt=100A/ s,VDS=100V 6 C.

5 A. The value of R JA is measured with the device in a still air environment with T A =25 C. B. The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C, Ratings are based on low frequency and duty cycles to keep initial TJ. =25 C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150 C.

6 The SOA curve provides a single pulse rating. G. L=60mH, IAS=6A, VDD=150V, RG=25 , Starting TJ=25 C. THIS Product HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE Product DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Jul 2011 Page 2 of 6. AOT16N50/AOTF16N50. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 32 100. 10V. 28 -55 C. VDS=40V. 24. 20 10. 6V. ID (A). ID(A). 16 125 C. 12. VGS= 1. 8. 25 C. 4. 0 0 5 10 15 20 25 30 2 4 6 8 10.

7 VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 3. Normalized On-Resistance VGS=10V. ID=8A. 2. RDS(ON) ( ). VGS=10V 1. 0. 0 4 8 12 16 20 24 28 32 -100 -50 0 50 100 150 200. ID (A) Temperature ( C). Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage +02. +01. 40. +00. BVDSS (Normalized). 125 C. IS (A). 1 25 C. -100 -50 0 50 100 150 200 TJ ( C) VSD (Volts). Figure 5:Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E). Rev3: Jul 2011 Page 3 of 6. AOT16N50/AOTF16N50. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 15 10000. VDS=400V Ciss 12 ID=16A.

8 1000. Capacitance (pF). Coss VGS (Volts). 9. 100. 6 Crss 10. 3. 0 1. 0 10 20 30 40 50 60 1 10 100. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100 100. 10 s 10 s RDS(ON) RDS(ON). limited 10 limited 10 100 s 100 s 1ms ID (Amps). ID (Amps). 1 1ms 1 10ms 10ms DC DC. 1s TJ(Max)=150 C. 10s TJ(Max)=150 C TC=25 C. TC=25 C. 1 10 100 1000 1 10 100 1000. VDS (Volts) VDS (Volts). Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe Operating Operating Area for AOT16N50 (Note F) Area for AOTF16N50 (Note F). 18. 15. Current rating ID(A). 12. 9. 6. 3. 0. 0 25 50 75 100 125 150. TCASE ( C).

9 Figure 11: Current De-rating (Note B). Rev3: Jul 2011 Page 4 of 6. AOT16N50/AOTF16N50. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10. D=Ton/T. In descending order TJ,PK=TC+ JC. Z JC Normalized transient D= , , , , , , single pulse Thermal Resistance R JC= C/W. 1. PD. Ton T. Single pulse 1 10 100. pulse Width (s). Figure 12: Normalized Maximum transient Thermal Impedance for AOT16N50 (Note F). 10. D=Ton/T In descending order Z JC Normalized transient TJ,PK=TC+ JC D= , , , , , , single pulse Thermal Resistance 1 R JC= C/W. PD. Ton T. Single pulse 1 10 100. pulse Width (s). Figure 13: Normalized Maximum transient Thermal Impedance for AOTF16N50 (Note F).

10 Rev3: Jul 2011 Page 5 of 6. AOT16N50/AOTF16N50. Gate Charge Test Circuit & Waveform Vgs Qg + 10V. VDC. + Qgs Qgd - VDC Vds DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. +. Vgs VDC Vdd Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds EAR= 1/2 LI AR BVDSS. Id Vds Vgs +. Vgs VDC Vdd I AR. Rg - Id DUT. Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Vds + Qrr = - Idt DUT. Vgs Vds - L Isd IF trr Isd dI/dt + Vdd IRM. Vgs VDC. Vdd Ig - Vds Rev3: Jul 2011 Page 6 of 6.