HMC659 - Analog Devices

1 AMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzFor price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices . Trademarks and registered trademarks are the property of their respective owners.

2 General DescriptionFeaturesFunctional DiagramThe HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and + dBm of output power at 1 dB gain compression while requiring 300mA from a +8V supply. Gain flatness is excellent at dB from DC to 10 GHz making the HMC659 ideal for EW, ECM, Radar and test equipment HMC659 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip- Modules (MCMs). All data is taken with the chip connected via two (1 mil) wire bonds of minimal length mm (12 mils).P1dB Output Power: + dBmGain: 19 dBOutput IP3: +35 dBmSupply Voltage: +8V @ 300mA50 Ohm Matched Input/OutputDie Size: x x mmTypical ApplicationsThe HMC659 is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber OpticsElectrical Specifications, TA = +25 C, Vdd= +8V, Vgg2= +3V, Idd= 300mA* RangeDC - 66 - 1111 - 15 GHzGain16.

3 8dBGain Flatness Variation Over CInput Return Loss191715dBOutput Return Loss181715dBOutput Power for 1 dB Compression (P1dB) Output Power (Psat)262727dBmOutput Third Order Intercept (IP3)353229dBmNoise Current(Idd) (Vdd= 8V, Vgg1= Typ.)300300300mA* Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzOutput Return Loss vs. TemperatureGain & Return LossGain vs. TemperatureReverse Isolation vs. TemperatureInput Return Loss vs. TemperatureNoise Figure vs. Temperature-30-20-1001020300246810121416 18S21S11S22 RESPONSE (dB)FREQUENCY (GHz)-30-25-20-15-10-50024681012141618+2 5C+85C -55 CRETURN LOSS (dB)FREQUENCY (GHz)01234567024681012141618+25C+85C -55 CNOISE FIGURE (dB)FREQUENCY (GHz)-60-50-40-30-20-100024681012+25C+85 C -55 CISOLATION (dB)FREQUENCY (GHz)-40-30-20-1000246810121416+25C+85C -55 CRETURN LOSS (dB)FREQUENCY (GHz)04812162024024681012141618+25C+85C -55 CGAIN (dB)FREQUENCY (GHz)For price, delivery, and to place orders: Analog Devices , Inc.

4 , One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzOutput IP3 vs. Output Power @ 7 GHzP1dB vs. FrequencyPsat vs. TemperatureOutput IP3 vs. TemperatureGain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)Vdd (V) (dBm)OUTPUT POWER (dBm)2025303540450246810121416+25C+85C -55 CIP3 (dBm)FREQUENCY (GHz)2022242628303203691215P1dB (dBm)FREQUENCY (GHz) +25C+85C -55 CPsat (dBm)FREQUENCY (GHz)For price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzAbsolute Maximum RatingsDrain Bias Voltage (Vdd)+9 VdcGate Bias Voltage (Vgg1)0 to -2 VdcGate Bias Voltage (Vgg2)+2V to +4 VRF Input Power (RFIN)(Vdd = +12V)+20 dBmChannel Temperature175 CContinuous Pdiss (T= 85 C)(derate 41 mW/ C above 85 C) WThermal Resistance (channel to die bottom) C/WStorage Temperature-65 to 150 COperating Temperature-55 to 85 CESD Sensitivity (HBM)Class1A, Passed 250 VVdd (V)Idd (mA)+7.

5 5299+ + Supply Current vs. VddELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSP ower Compression @ 15 GHzPower DissipationPower Compression @ 2 GHzPower Compression @ 7 GHz04812162024283203691215 PoutGainPAEPout (dBm), GAIN (dB), PAE (%)INPUT POWER (dBm)04812162024283203691215 PoutGainPAEPout (dBm), GAIN (dB), PAE (%)INPUT POWER (dBm)04812162024283203691215 PoutGainPAEPout (dBm), GAIN (dB), PAE (%)INPUT POWER (dBm)0246810-10-6-226101418 Max Pdis @ 85C2 GHz12 GHzPOWER DISSIPATION (W)INPUT POWER (dBm)For price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzOutline DrawingNOTES:1.

6 ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS ( )3. TYPICAL BOND PAD IS ( ) SQUARE4. BOND PAD METALIZATION: GOLD5. BACKSIDE METALLIZATION: GOLD6. BACKSIDE METAL IS GROUND7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS8. OVERALL DIE SIZE IS .002 Die Packaging Information [1]StandardAlternateGP-1 (Gel Pack)[2][1] Refer to the Packaging Information section for die packaging dimensions.[2] For alternate packaging information contact Hittite Microwave price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzPad NumberFunctionDescriptionInterface Schematic1 INThis pad is DC coupled and matched to 50 Ohms.

7 Blocking capacitor is control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3V should be applied to frequency termination. Attach bypass capacitor per application circuit frequency termination. Attach bypass capacitor per application circuit & VddRF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit frequency termination. Attach bypass capacitor per application circuit control 1 for amplifier. Attach bypass capacitor per application circuit herein. Pleasefollow MMIC Amplifier Biasing Procedure application BottomGNDDie bottom must be connected to RF/DC DescriptionsFor price, delivery, and to place orders: Analog Devices , Inc.

8 , One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzApplication CircuitNOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mAAssembly DiagramFor price, delivery, and to place orders: Analog Devices , Inc., One technology Way, Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at Support: Phone: 1-800- Analog -DAMPLIFIERS - LINEAR & POWER - PHEMT MMIC POWER AMPLIFIER, DC - 15 GHzMounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

9 50 Ohm Microstrip transmission lines on (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If (10 mil) thick alumina thin film substrates must be used, the die should be raised (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accom-plish this is to attach the (4 mil) thick die to a (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is to mm (3 to 6 mils).Handling PrecautionsFollow these precautions to avoid permanent : All bare die are placed in either Waffle or Gel based ESD protec-tive containers, and then sealed in an ESD protective bag for shipment.

10 Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen : Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning Sensitivity: Follow ESD precautions to protect against ESD : Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C.