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Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT ...
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS)
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