MCP16311/MCP16312 Data Sheet - Microchip Technology

1 2013-2019 Microchip Technology 1 MCP16311/2 Features Up to 95% Efficiency Input voltage Range: to 30V 1A Output Current Capability Output voltage Range: to 24V Qualification: AEC-Q100 Rev. G, Grade 1(-40 C to +125 C) Integrated N-Channel high -Side and Low-Side Switches:-170m , Low Side-300m , high Side Stable Reference voltage : Automatic Pulse Frequency Modulation/Pulse-Width Modulation (PFM/PWM) Operation (MCP16311):- PFM Operation Disabled (MCP16312)- PWM Operation: 500 kHz Low Device Shutdown Current: 3 A Typical Low Device Quiescent Current:- 44 A (Non-switching, PFM Mode) Internal Compensation Internal Soft-Start.

2 300 s (EN Low-to- high ) Peak Current Mode Control Cycle-by-Cycle Peak Current Limit Undervoltage Lockout (UVLO):- typical to start- typical to stop Overtemperature Protection Thermal Shutdown:- +150 C- +25 C HysteresisApplications PIC /dsPIC Microcontroller Bias Supply 24V Industrial Input DC-DC Conversion General Purpose DC-DC Conversion Local Point of Load Regulation Automotive Battery Regulation Set-Top Boxes Cable Modems Wall Transformer Regulation Laptop Computers Networking Systems AC-DC Digital Control Bias Distributed Power SuppliesGeneral DescriptionThe MCP16311/2 is a compact, high -efficiency, fixedfrequency, synchronous step-down DC-DC converter inan 8-pin MSOP.

3 Or 2 x 3 mm TDFN package thatoperates from input voltage sources up to features include a high -side and a low-sideswitch, fixed frequency peak current mode control,internal compensation, peak current limit andovertemperature protection. The MCP16311/2 providesall the active functions for local DC-DC conversion, withfast transient response and accurate converter efficiency is achieved by integrating thecurrent-limited, low-resistance, high -speed high -sideand low-side switches and associated drive MCP16311 is capable of running in PWM/PFMmode.

4 It switches in PFM mode for light loadconditions and for large buck conversion ratios. Thisresults in a higher efficiency over all load ranges. TheMCP16312 runs in PWM-only mode, and isrecommended for noise-sensitive MCP16311/2 can supply up to 1A of continuouscurrent while regulating the output voltage from 2V to12V. An integrated, high -performance peak currentmode architecture keeps the output voltage tightlyregulated, even during input voltage steps and outputcurrent transient conditions common in power EN input is used to turn the device on and off.

5 Only a few micro amps of current areconsumed from the voltage is set with an external resistor MCP16311/2 is offered in small MSOP-8 and2 x 3 mm TDFN surface mount TypeENVCCVINBOOSTSW12348765 PGNDVFBEP9 AGND5123 AGNDSWENVINVFBMCP16311/2 MSOP8 76 BOOST4 PGNDVCC MCP16311/22x3 mm TDFN** Includes Exposed Thermal Pad (EP); see Ta b l e 3 - Input, 1A Output, high -Efficiency,Integrated Synchronous Switch Step-Down RegulatorMCP16311/2DS20005255C-page 2 2013-2019 Microchip Technology Applications0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 Efficiency (%) IOUT (mA)

6 PWM ONLY PWM/PFM VIN = 12V OUT = 5 VVOUT = to @ 1 ACOUT2x10 FCIN2x10 FL115 k 10 k ENCBOOST100 nFVCCCVCC1 FVINGNDVFBSWVin 6V to 30 VVOUT5V, @ 1 ACOUT2x10 FCIN2x10 FL122 k 10 k ENCBOOST100 nFVCCCVCC1 F 2013-2019 Microchip Technology 3 MCP16311 CHARACTERISTICSA bsolute Maximum Ratings VIN, SW .. to 32 VBOOST GND .. to 38 VBOOST SW to voltage .. to voltage .. to (VIN+ )Output Short-Circuit Current .. ContinuousPower Dissipation .. Internally LimitedStorage Temperature.

7 -65 C to +150 CAmbient Temperature with Power Applied ..-40 C to +125 COperating Junction C to +150 CESD Protection on All Pins: HBM .. 1 kVMM ..200V Notice: Stresses above those listed under MaximumRatings may cause permanent damage to the is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operational sections of thisspecification is not intended. Exposure to maximumrating conditions for extended periods may affectdevice CHARACTERISTICSE lectrical Characteristics.

8 Unless otherwise indicated, TA=+25 C, VIN=VEN=7V, VBOOST-VSW= , VOUT= , IOUT= 100 mA, L = 22 H, COUT=CIN= 2 x 10 F X7R Ceramic specifications apply over the TA range of -40 C to +125 Supply VoltageInput 30 VNote 1 Quiescent Current IQ 4460 ANonswitching, VFB= Current - PFM ModeIQ_PFM 85 ASwitching,IOUT=0 (MCP16311)Quiescent Current - PWM ModeIQ_PWM ,IOUT=0 (MCP16312)Quiescent Current - ShutdownIQ_SHDN 39 AVOUT=EN=0 VVIN Undervoltage LockoutUndervoltage Lockout StartUVLOSTRT RisingUndervoltage Lockout VVIN FallingUndervoltage Lockout CharacteristicsFeedback voltage Adjust 24 VNote 2, Note 3 Feedback voltage Line Regulation VFB/VFB)/ 7V to 30V, IOUT=50mAFeedback VoltageLoad Regulation VFB / VFB %IOUT= 5 mA to 1A, MCP16312 Note 1:The input voltage should be greater than the output voltage plus headroom voltage .

9 Higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input-to-output operating voltage :For VIN<VOUT, VOUT will not remain in regulation; for output voltages above 12V, the maximum current will be limited to under :Determined by characterization, not production :This is ensured by 4 2013-2019 Microchip Technology Input Bias CurrentIFB 10250nAOutput CurrentIOUT1 ANotes 1 to3, Figure 2-7 Switching CharacteristicsSwitching FrequencyfSW425500575kHzMaximum Duty CycleDCMAX8594 %Note 3 Minimum Duty CycleDCMIN 2 %Note 4 high -Side NMOS Switch-On ResistanceRDS(ON) VBOOST VSW = 5V,Note 3 Buck NMOS SwitchCurrent LimitI(MAX) AVBOOST VSW = 5V,Note 3 Synchronous NMOS Switch-On ResistanceRDS(ON)

10 Note 3EN Input CharacteristicsEN Input Logic VEN Input Logic LowVIL Input Leakage CurrentIENLK AVEN=5 VSoft-Start TimetSS 300 sEN Low-to- high , 90% of VOUTT hermal CharacteristicsThermal Shutdown Die TemperatureTSD 150 CNote 3 Die Temperature HysteresisTSDHYS 25 CNote 3 TEMPERATURE CHARACTERISTICSE lectrical Specifications: Unless otherwise indicated, TA= +25 C, VIN=VEN=7V, VBOOST-VSW= , VOUT= RangesOperating Junction Temperature RangeTJ-40 +125 CSteady StateStorage Temperature RangeTA-65 +150 CMaximum Junction TemperatureTJ +150 CTransientPackage Thermal ResistancesThermal Resistance, 8L-MSOP JA 211 C/WEIA/JESD51-3 StandardThermal Resistance, 8L-2x3 TDFN JA C/WEIA/JESD51-3 StandardDC CHARACTERISTICS (CONTINUED)Electrical Characteristics.