NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK

1 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201AN Ideal for Coil on Plug and Driver on Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space gate Emitter ESD Protection Temperature Compensated gate Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short Circuit Capability These are Pb Free DevicesFeaturesThis Logic Level insulated gate bipolar transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications.

2 Primary uses include Ignition , Direct Fuel Injection, or wherever high voltage and high current switching is Emitter VoltageVCES440 VGate gate VoltageVCES440 VGate Emitter VoltageVGE 15 VCollector Current Continuous@ TC = 25 C PulsedIC2050 ADC AACC ontinous gate Current IG1. 0mATransient gate Current (t 2 ms, f 100 Hz)IG20mAESD (Charged Device Model) (Human Body Model) R = 1500 , C = 100 (Machine Model) R = 0 , C = 200 pFESD500 VTotal Power Dissipation @ TC = 25 C Derate above 25 COperating and Storage Temperature RangeTJ, Tstg 55 to +175 CMaximum Ratings (TJ = 25 C unless otherwise noted) NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAKF unctional DiagramPbStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

3 Extended exposure to stresses above the Recommended Operating Conditions may affect device InformationSamplesResourcesDatasheet20 Amps, 400 VoltsVCE(on) V @IC = 10 A, VGE V 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANUnclamped Collector To Emitter Avalanche CharacteristicsThermal CharacteristicsSymbolValueUnitThermal Resistance, Junction to CaseR JC1. 3 C/WThermal Resistance, Junction to Ambient DPAK (Note 1)R JA95 Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 secondsTL275 C1. When surface mounted to an FR4 board using the minimum recommended pad Pulse Collector to Emitter Avalanche EnergyVCC = 50 V, VGE = V, Pk IL = A, RG = 1000 , L = mH, Starting TJ = 25 CEAS250mJVCC = 50 V, VGE = V, Pk IL = A, RG = 1000 , L = mH, Starting TJ = 150 C 200 VCC = 50 V, VGE = V, Pk IL = A, RG = 1000 , L = mH, Starting TJ = 175 C180 Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = A, L = mH, Starting TJ = 25 CEAS (R)2000mJ 2018 Littelfuse, are subject to change without notice.

4 Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANElectrical Characteristics - OFFC haracteristicSymbolTest ConditionsTemperatureMinTy pMaxUnitCollector Emitter Clamp VoltageBVCESIC = mATJ = 40 C to 175 C370395420 VIC = 10 mATJ = 40 C to 175 C390415440 Zero gate Voltage Collector CurrentICESVCE = 15 VVGE = 0 VTJ = 25 C 0 AVCE = 200 VVGE = 0 VTJ = 25 510TJ = 175 C1. 02510 0*TJ = 40 Collector Emitter Clamp VoltageBVCES(R)IC = -75 mATJ = 25 C303539 VTJ = 175 C353945*TJ = 40 C303337 Reverse Collector Emitter Leakage CurrentICES(R)VCE = 24 VTJ = 25 0mATJ = 175 C1. = 40 Emitter Clamp VoltageBVGESIG = mATJ = 40 C to 175 Emitter Leakage CurrentIGESVGE = VTJ = 40 C to 175 C200300350* AGate ResistorRG_TJ = 40 C to 175 C 70 gate Emitter ResistorRGE TJ = 40 C to 175 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

5 Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.*Maximum Value of Characteristic across Temperature Range. 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANElectrical Characteristics - ON (Note 3)CharacteristicSymbolTest ConditionsTemperatureMinTy pMaxUnitGate Threshold VoltageVGE (th)IC = mA, VGE = VCETJ = 25 C1. 51. = 175 01. 3TJ = 40 C1. *Threshold Temperature Coefficient (Negative) CCollector to Emitter On VoltageVCE (on)IC = A, VGE = VTJ = 25 = 175 1 5TJ = 40 111. 4IC = A, VGE = VTJ = 25 = 175 = 40 C1. 01. 1 81. 5IC = A, VGE = VTJ = 25 1 51. 4TJ = 175 2TJ = 40 C1. 01. *IC = 10 A, VGE = VTJ = 25 C1. 01. 31.

6 6TJ = 175 4TJ = 40 C1. 11. *IC = 15 A, VGE = VTJ = 25 C1. 1 7TJ = 175 C1. 01. = 40 *IC = 20 A, VGE = VTJ = 25 C1. 11. 41. 9TJ = 175 C1. 21. 51. 8TJ = 40 C1. TransconductancegfsIC = A,VCE = VTJ = 25 C101825 Mhos*Maximum Value of Characteristic across Temperature Pulse Test: Pulse Width 300 S, Duty Cycle 2%. 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANSwitching CharacteristicsCharacteristicSymbolTest ConditionsTemperatureMinTy pMaxUnitTurn Off Delay Time (Resistive)td (off)VCC = 300 V IC = A RG = k RL = 33 VGE = VTJ = 25 SecTJ = 175 Time (Resistive)tfTJ = 25 = 175 Off Delay Time (Inductive)td (off)VCC = 300 V IC = A RG = k L = 300 HVGE = VTJ = 25 0TJ = 175 Time (Inductive)tfTJ = 25 C1.

7 = 175 010 Turn On Delay Timetd (on)VCC = 14 V IC = A RG = k RL = VGE = VTJ = 25 C1. 01. = 175 C1. 01. TimetrTJ = 25 = 175 0 Dynamic CharacteristicsCharacteristicSymbolTest ConditionsTemperatureMinTy pMaxUnitInput CapacitanceCISSf = 10 kHzVCC = 25 V TJ = -40 C to 175 C110 013001500pFOutput CapacitanceCOSS708090 Transfer CapacitanceCRSS182022 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANFigure 1. Self Clamped Inductive SwitchingTypical Electrical Characteristics Figure 2. Open Secondary Avalanche Current vs. TemperatureFigure 3. Collector to Emitter Voltage vs. Junction TemperatureFigure 5. Collector Current vs. Collector to Emitter VoltageFigure 6. Collector Current vs. Collector to Emitter VoltageFigure 4.

8 Collector Current vs. Collector to Emitter Voltage 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANFigure 7. Transfer CharacteristicsFigure 8. Collector to Emitter Leakage Current vs. TempFigure 9. gate Threshold Voltage vs. TemperatureFigure 11. Resistive Switching Fall Time vs. TemperatureFigure 12. Inductive Switching Fall Time vs. TemperatureFigure 10. Capacitance vs. Collector to Emitter Voltage 2018 Littelfuse, are subject to change without notice. Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANFigure 13. Minimum Pad Transient Thermal Resistance (Non normalized Junction to Ambient)Figure 14. Best Case Transient Thermal Resistance (Non normalized Junction to Case Mounted on Cold Plate) 2018 Littelfuse, are subject to change without notice.

9 Revised: 02/15/18 Ignition IGBTS urface Mount > 400V > NGD8201 ANDimensionsPart Marking SystemNOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR gate BURRS SHALL NOT EXCEED INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC DATUMS A AND B ARE DETERMINED AT DATUM PLANE 1 1. Soldering FootrpintORDERING INFORMATIOND evicePackageShipping NGD8201 ANT4 GDPAK(Pb Free)2,500 / Tape & 3 ( )Cc2 AcCZ1234A1 HDETAIL ASEATINGPLANEABCL1 LHL2 GAUGEPLANEDETAIL AROTATED 90 CWeBOTTOM VIEWZBOTTOM VIEWSIDE VIEWTOP VIEWALTERNATECONSTRUCTIONNOTE 71 Gate4 Collector2 Collector3 EmitterAYWWNGD= Device CodeA=Y= YearWW= Work WeekGeLFNGD8201 AAssembly Location8201 ANDisclaimer Notice - Information furnished is believed to be accurate and reliable.

10 However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at.