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NTE159 Silicon PNP Transistor Audio Amplifier, Switch ...

NTE159 Silicon PNP TransistorAudio amplifier , Switch (Compl to NTE123AP)Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO80V.. Collector-Base Voltage, VCBO80V.. Emitter-Base Voltage, VEBO5V.. Continuous Collector Current, IC800mA.. Total Device Dissipation (TA = 25 C), PD625mW.. Derate Above 25 C5mW/ C.. Operating Junction Temperature Range, TJ-55 to +150 C.. Storage Temperature Range, Tstg-55 to +150 C.. Thermal Resistance, Junction to Case, R C/W.. Thermal Resistance, Junction to Ambient, R JA200 C/W.. Note 1. Matched complementary pairs are available upon request ( NTE159 MCP). Matched com plementary pairs have their gain specification (hFE) matched to within 10% of each Characteristics: (TA = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitOFF CharacteristicsCollector-Emitter Breakdown VoltageV(BR)CEOIC = 10mA, IB = 0, Note 280--VCollector-Base Breakdown VoltageV(BR)CBOIC = 10 A, IE = 080--VEmitter-Base Breakdown VoltageV(BR)EBOIE = 10 A, IC = 05--VCollector Cutoff CurrentICBOVCB = 50V, IE = 0--50nAVCB = 50V, IE = 0, TA = +75 C--5 AEmitter Cutoff CurrentIEBO--100nAON Characteristics (Note 2)DC Current Gainh

Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance Cob VCB = 20V, IE = 0, f = 1MHz - - 30 pF Input Capacitance Cib VBE = 500mV, f = 1MHz - - 110 pF Small-Signal Current Gain hfe IC = 500mA, VCE = 10V, f = 100MHz 1 - 5 Noise Figure NF IC = 100mA, VCE = 10V, RS = 1kΩ,

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Transcription of NTE159 Silicon PNP Transistor Audio Amplifier, Switch ...

1 NTE159 Silicon PNP TransistorAudio amplifier , Switch (Compl to NTE123AP)Absolute Maximum Ratings:Collector-Emitter Voltage, VCEO80V.. Collector-Base Voltage, VCBO80V.. Emitter-Base Voltage, VEBO5V.. Continuous Collector Current, IC800mA.. Total Device Dissipation (TA = 25 C), PD625mW.. Derate Above 25 C5mW/ C.. Operating Junction Temperature Range, TJ-55 to +150 C.. Storage Temperature Range, Tstg-55 to +150 C.. Thermal Resistance, Junction to Case, R C/W.. Thermal Resistance, Junction to Ambient, R JA200 C/W.. Note 1. Matched complementary pairs are available upon request ( NTE159 MCP). Matched com plementary pairs have their gain specification (hFE) matched to within 10% of each Characteristics: (TA = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitOFF CharacteristicsCollector-Emitter Breakdown VoltageV(BR)CEOIC = 10mA, IB = 0, Note 280--VCollector-Base Breakdown VoltageV(BR)CBOIC = 10 A, IE = 080--VEmitter-Base Breakdown VoltageV(BR)EBOIE = 10 A, IC = 05--VCollector Cutoff CurrentICBOVCB = 50V, IE = 0--50nAVCB = 50V, IE = 0, TA = +75 C--5 AEmitter Cutoff CurrentIEBO--100nAON Characteristics (Note 2)DC Current GainhFEVCE = 10V, IC = 100 A25--VCE = 10V, IC = 1mA40--VCE = 10V, IC = 10mA50-250 VCE = 10V, IC = 100mA40--VCE = 10V, IC = 500mA30--Collector-Emitter Saturation VoltageVCE(sat)IC = 150mA, IB = = 500mA, IB = Saturation VoltageVBE(sat)IC = 150mA, IB = = 500mA, IB = 2.

2 Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Cont'd): (TA = +25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitDynamic CharacteristicsOutput CapacitanceCobVCB = 20V, IE = 0, f = 1 MHz--30pFInput CapacitanceCibVBE = 500mV, f = 1 MHz--110pFSmall-Signal Current GainhfeIC = 500mA, VCE = 10V, f = 100 MHz1-5 Noise FigureNFIC = 100mA, VCE = 10V, RS = 1k ,f = 1kHz, BW = 1Hz--3dBSwitching CharacteristicsTurn-On TimetonVCC = 30V, IC = 500mA,IB1 = IB2 = 50mA--100nsTurn-Off (.445) Dia MaxE B CSeating ( ) ( ).050 ( ).105 ( ) ( ) ( ) ( ) ( ) ( )Max


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