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PESDxL2BT series Low capacitance double bidirectional ESD ...

1. Product General descriptionLow capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in aSOT23 small Surface Mounted Device (SMD) plastic package designed to protect twosignal lines from the damage caused by ESD and other Quick reference dataPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodesin SOT23 Rev. 02 25 August 2009 Product data sheetnESD protection of two linesnUltra low leakage current: IRM<90nAnMax. peak pulse power: PPP= 350 WnESD protection up to 23 kVnLow clamping voltage: VCL=26 VnIEC 61000-4-2, level 4 (ESD)nSmall SMD plastic packagenIEC 61000-4-5 (surge); IPP=15 AnComputers and peripheralsnCommunication systemsnAudio and video equipmentnPortable electronicsnCellular handsets and accessoriesnSubscriber Identity Module (SIM) cardpro

Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values [1] Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 5. Limiting values

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Transcription of PESDxL2BT series Low capacitance double bidirectional ESD ...

1 1. Product General descriptionLow capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in aSOT23 small Surface Mounted Device (SMD) plastic package designed to protect twosignal lines from the damage caused by ESD and other Quick reference dataPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodesin SOT23 Rev. 02 25 August 2009 Product data sheetnESD protection of two linesnUltra low leakage current: IRM<90nAnMax. peak pulse power: PPP= 350 WnESD protection up to 23 kVnLow clamping voltage: VCL=26 VnIEC 61000-4-2, level 4 (ESD)nSmall SMD plastic packagenIEC 61000-4-5 (surge); IPP=15 AnComputers and peripheralsnCommunication systemsnAudio and video equipmentnPortable electronicsnCellular handsets and accessoriesnSubscriber Identity Module (SIM) cardprotectionTable reference dataSymbolParameterConditionsMinTypMaxUn itVRWM reverse standoff capacitanceVR=0V.

2 F=1 MHzPESD3V3L2BT-101-pFPESD5V0L2BT-75-pFPE SD12VL2BT-19-pFPESD15VL2BT-16-pFPESD24VL 2BT-11-pFPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20092 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT232. Pinning information3. Ordering information4. Marking[1]* = -: made in Hong Kong* = p: made in Hong Kong* = t: made in Malaysia* = W: made in ChinaTable outlineSymbol1cathode 12cathode 23double cathode12321006aaa1553 Table informationType numberPackageNameDescriptionVersionPESD3 V3L2BT-plastic surface mounted package; 3 leadsSOT23 PESD5V0L2 BTPESD12VL2 BTPESD15VL2 BTPESD24VL2 BTTable codesType numberMarking code[1]PESD3V3L2 BTV3*PESD5V0L2 BTV4*PESD12VL2 BTV5*PESD15VL2 BTV6*PESD24VL2 BTV7* Nexperia 2017.

3 All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20093 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT235. Limiting values[1]Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.[2]Measured from pin 1 to 3 or 2 to 3.[1]Device stressed with ten non-repetitive ESD pulses.[2]Measured from pin 1 to 3 or 2 to valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUn itPPPpeak pulse powertp= 8/20 s[1][2]PESD3V3L2BT-350 WPESD5V0L2BT-350 WPESD12VL2BT-200 WPESD15VL2BT-200 WPESD24VL2BT-200 WIPP peak pulse currenttp= 8/20 s[1][2]PESD3V3L2BT-15 APESD5V0L2BT-13 APESD12VL2BT-5 APESD15VL2BT-5 APESD24VL2BT-3 ATjjunction temperature-150 CTambambient temperature 65+150 CTstgstorage temperature 65+150 CTable maximum ratingsSymbolParameterConditionsMinMaxUn itVESD electrostatic dischargevoltageIEC 61000-4-2(contact discharge)

4 [1][2]PESD3V3L2BT-30kVPESD5V0L2 BTPESD12VL2 BTPESD15VL2 BTPESD24VL2BT-23kVPESDxL2BT seriesHBM MIL-STD883-10kVTable standards complianceESD StandardConditionsIEC 61000-4-2, level 4 (ESD)> 15 kV (air); > 8 kV (contact)HBM MIL-STD883, class 3> 4 kV Nexperia 2017. All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20094 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT23 Fig s pulse waveform according toIEC 61000-4-5 Fig pulse waveform according toIEC 61000-4-2t ( s)040301020001aaa6304080120 IPP(%)0e t100 % IPP; 8 s50 % IPP; 20 s001aaa631 IPP100 %90 %t30 ns60 ns10 %tr = ns to 1 ns Nexperia 2017.

5 All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20095 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT236. CharacteristicsTable C unless otherwise standoff leakage currentPESD3V3L2 BTVRWM= APESD5V0L2 BTVRWM= APESD12VL2 BTVRWM=12V-<150nAPESD15VL2 BTVRWM=15V-<150nAPESD24VL2 BTVRWM=24V-<150nAVBR breakdown voltageIR= capacitanceVR=0V;f=1 MHzPESD3V3L2BT-101-pFPESD5V0L2BT-75-pFPE SD12VL2BT-19-pFPESD15VL2BT-16-pFPESD24VL 2BT-11-pFVCL clamping voltage[1][2]PESD3V3L2 BTIPP=1A--8 VIPP=15A--26 VPESD5V0L2 BTIPP=1A--10 VIPP=13A--28 VPESD12VL2 BTIPP=1A--20 VIPP=5A--37 VPESD15VL2 BTIPP=1A--25 VIPP=5A--44 VPESD24VL2 BTIPP=1A--40 VIPP=3A--70V Nexperia 2017.

6 All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20096 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT23[1]Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.[2]Measured from pin 1 to 3 or 2 to resistanceIR=1mAPESD3V3L2BT--400 PESD5V0L2BT--80 PESD12VL2BT--200 PESD15VL2BT--225 PESD24VL2BT--300 Table ..continuedTamb=25 C unless otherwise Nexperia 2017. All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20097 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT23 Tamb=25 C(1) PESD3V3L2BT and PESD5V0L2BT(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2 BTFig pulse power as a function of exponentialpulse duration tp; typical valuesFig variation of peak pulse power as afunction of junction temperature; typicalvaluesTamb=25 C; f = 1 MHz(1) PESD3V3L2BT(2) PESD5V0L2 BTTamb=25 C; f = 1 MHz(1) PESD12VL2BT(2) PESD15VL2BT(3) PESD24VL2 BTFig capacitance as a function of reversevoltage.

7 Typical valuesFig capacitance as a function of reversevoltage; typical values006aaa531103102104 PPP(W)10tp ( s)110410310102(1)(2)Tj ( C) (25 C)VR (V)054231006aaa0677090100110Cd(pF)506080 (1)(2)VR (V)0252010155006aaa06881241620Cd(pF)0(1) (2)(3) Nexperia 2017. All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20098 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT23(1) PESD3V3L2BT, PESD5V0L2 BTPESD12VL2BT, PESD15VL2BT and PESD24VL2BT:IRM< 20 nA; Tj= 150 CFig variation of reverse leakage currentas a function of junction temperature; typicalvaluesFig characteristics for a bidirectional ESDprotection diode006aaa06911010 1Tj ( C) 100150100050 50 IRMIRM(25 C)(1)006aaa676 VCL VBR VRWMVCLVBRVRWM IRMIRM IRIR IPPIPP + Nexperia 2017.

8 All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 20099 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT23 Fig clamping test setup and waveforms006aaa16250 (DeviceUnderTest)vertical scale = 200 V/divhorizontal scale = 50 ns/divunclamped +1 kV ESD voltage waveform(IEC 61000-4-2 network)clamped +1 kV ESD voltage waveform(IEC 61000-4-2 network)unclamped 1 kV ESD voltage waveform(IEC 61000-4-2 network)clamped 1 kV ESD voltage waveform(IEC 61000-4-2 network)vertical scale = 200 V/divhorizontal scale = 50 ns/divvertical scale = 20 V/div; horizontal scale = 50 ns/divvertical scale = 20 V/div; horizontal scale = 50 ns/divGNDGND450 RG 223/U50 coaxESD TESTERIEC 61000-4-2 networkCZ = 150 pF; RZ = 330 4 GHz DIGITALOSCILLOSCOPE10 ATTENUATORGNDGNDGNDGNDGNDGNDGNDGNDGNDGND PESD3V3L2 BTPESD5V0L2 BTPESD12VL2 BTPESD15VL2 BTPESD24VL2 BTPESD3V3L2 BTPESD5V0L2 BTPESD12VL2 BTPESD15VL2 BTPESD24VL2BT Nexperia 2017.

9 All rights reservedPESDXL2BT_SER_2 Product data sheetRev. 02 25 August 200910 of 14 NexperiaPESDxL2BT seriesLow capacitance double bidirectional ESD protection diodes in SOT237. Application informationThe PESDxL2BT series is designed for the protection of two bidirectional signal lines fromthe damage caused by ESD and surge pulses. The PESDxL2BT series may be used onlines where the signal polarities are above and below ground. The PESDxL2BT seriesprovides a surge capability of up to 350 W per line for an 8/20 s board layout and protection device placementCircuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)and surge transients.

10 The following guidelines are recommended:1. Place the PESDxL2BT as close to the input terminal or connector as The path length between the PESDxL2BT and the protected line should Keep parallel signal paths to a Avoid running protected conductors in parallel with unprotected Minimize all Printed-Circuit Board (PCB) conductive loops including power andground Minimize the length of the transient return path to Avoid using shared transient return paths to a common ground Ground planes should be used whenever possible. For multilayer PCBs, use 10.


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