Power MOSFET - Vishay

1 Document Number: 91074 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRF9520, SiHF9520 Vishay Siliconix FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-220AB package is universally preferred for allcommercial-industrial applications at Power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig.)

2 11).b. VDD = - 25 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = - A (see fig. 12).c. ISD - A, dI/dt 110 A/ s, VDD VDS, TJ 175 mm from SUMMARYVDS (V)- 100 RDS(on) ( )VGS = - 10 V (Max.) (nC)18 Qgs (nC) (nC) MOSFETTO-220 ABGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF9520 PbFSiHF9520-E3 SnPbIRF9520 SiHF9520 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS- 100V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at - 10 VTC = 25 C ID- = 100 C - Drain CurrentaIDM - 27 Linear Derating C Single Pulse Avalanche EnergybEAS 300mJ Repetitive Avalanche CurrentaIAR - Repetitive Avalanche Maximum Power DissipationTC = 25 C PD60W Peak Diode Recovery dV/dtcdV/dt - Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 175 C Soldering Recommendations (Peak Temperature)

3 For 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 910742S11-0512-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = - 250 A - 100--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = - 1 mA -- C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = - 250 A - Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V --- 100 A VDS = - 80 V, VGS = 0 V, TJ = 150 C --- 500 Drain-Source On-State Resistance RDS(on)

4 VGS = - 10 VID = - Forward Transconductance gfs VDS = - 50 V, ID = - DynamicInput Capacitance Ciss VGS = 0 V,VDS = - 25 V, f = MHz, see fig. 5 -390-pFOutput Capacitance Coss -170-Reverse Transfer Capacitance Crss -45-Total Gate Charge Qg VGS = - 10 V ID = - A, VDS = - 80 V, see fig. 6 and 13b--18nC Gate-Source Charge Qgs ChargeQgd Delay Time td(on) VDD = - 50 V, ID = - A,Rg = 18 , RD = , see fig. Timetr -29-Turn-Off Delay Time td(off) -21-Fall Time tf -25-Internal Drain Inductance LD Between lead,6 mm ( ") from package and center of die contact Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--- Diode Forward CurrentaISM--- 27 Body Diode VoltageVSDTJ = 25 C, IS = - A, VGS = 0 Vb--- Diode Reverse Recovery TimetrrTJ = 25 C, IF = - A, dI/dt = 100 A/ sb-98200nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDG Document Number.

5 91074 B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 175 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature91074_0120 s Pulse WidthTC = 25 C- V- VDS, Drain-to-Source Voltage (V)- ID, Drain Current (A)100101101100 BottomTo pVGS - 15 V - 10 V- V- V- V- V- V- V101100100101- VDS, Drain-to-Source Voltage (V)- ID, Drain Current (A)20 s Pulse WidthTC = 175 C91074_02- VBottomTo pVGS- 15 V- 10 V- V- V- V- V- V- V20 s Pulse WidthVDS = - 50 V101100- ID, Drain Current (A)- VGS, Gate-to-Source Voltage (V)5678910425 C175 C91074_03ID = - AVGS = - 10 , Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized)91074_04- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180 Document Number: 910744S11-0512-Rev.

6 B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area9007506004500150300100101 Capacitance (pF)- VDS, Drain-to-Source Voltage (V)CissCrssCossVGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd91074_05QG, Total Gate Charge (nC)- VGS, Gate-to-Source Voltage (V)201612804042016128 VDS = - 20 VVDS = - 50 VFor test circuitsee figure 13 VDS = - 80 V91074_06ID = - A101100- VSD, Source-to-Drain Voltage (V)- ISD, Reverse Drain Current (A) C175 CVGS = 0 V91074_0710-1100 s1 ms10 msOperation in this area limitedby RDS(on)- VDS, Drain-to-Source Voltage (V)- ID, Drain Current (A)TC = 25 CTJ = 175 CSingle Pulse10225125102525110251022510391074_08 103 Document Number.

7 91074 B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case150- ID, Drain Current (A)TC, Case Temperature ( C) width 1 sDuty factor % 10 V+-VDSVDDVGS10 %90 %VDStd(on)trtd(off) , Rectangular Pulse Duration (s)Thermal Response (ZthJC)Notes:1. Duty Factor, D = t1/t22. Peak Tj = PDM x ZthJC + TCSingle Pulse(Thermal Response) = Document Number: 910746S11-0512-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix Fig.

8 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test +-VDD- 10 VVar y tp to obtainrequired IASIASVDSVDDVDStp25150125100755010000200 400600800 Starting TJ, Junction Temperature ( C)EAS, Single Pulse Energy (mJ)BottomTo pID- A- A- AVDD = - 25 V91074_12c175 QGSQGDQGVGC harge- 10 3 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: 91074 B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS datasheet ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF9520 Vishay Siliconix Fig. 14 - For P-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.

9 Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtBody diode forward dropBody diode forwardcurrentDriver gate driveInductor currentD = +----+ ++Peak Diode Recovery dV/dt Test Circuit dV/dt controlled by Rg - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRg Compliment N-Channel of for driverVDD ISD controlled by duty factor D NoteNotea. VGS = - 5 V for logic level and - 3 V drive devicesVGS = - 10 lSD VDS waveformVDDRe-appliedvoltageRipple 5 %ISDR everserecoverycurrentPackage Siliconix Revison: 14-Dec-151 Document Number: 66542 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT M* = inches to inches (dimension includingprotrusion), heatsink hole for HVMM*321LL(1)DH(1)Q PAFJ(1)b(1)e(1) (1) (1) (1) (1) (1) : X15-0364-Rev.

10 C, 14-Dec-15 DWG: 6031 Package PictureASEXi anLegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.