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Power MOSFET - Vishay Intertechnology
Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 100 V SD, Source-to-Drain Voltage (V) I SD, Reverse Drain Current (A) 0.50 0.70 0.90 1.10 1.30 25 °C 150 °C V GS = 0 V 91036_07 1.50 10 µs 100 µs 1 ms 10 ms Operation in this area limited ...
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How to Select the Right MOSFET for Power Factor …
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Small Signal Switching Diodes, High Voltage
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Transient Voltage Suppressors (TVS) for …
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Power Metal Strip Resistors, Low Value (down to …
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Resistive Products Power Dissipation in High …
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Vishay Semiconductors
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www.vishay.comMOSFET characteristics, both with a curve tracer and with special-purpose test circuits . Testing Power MOSFETs on a curve tracer is a simple matter, provided the broad correspondence between bipolar transistor and Power MOSFET features are borne in mind. Table 1 matches some features of Power MOSFETs wi th their bipolar counterparts.
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