REPETITIVE AVALANCHE AND dv/dt RATED IRF460 …

1 Absolute Maximum RatingsParameterUnits ID @ VGS = 10V, TC = 25 CContinuous Drain Current21 ID @ VGS = 10V, TC = 100 C Continuous Drain Current14 IDMP ulsed Drain Current 84PD @ TC = 25 CMax. Power Dissipation300 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse AVALANCHE Energy 1200mJIARA valanche Current 21 AEARR epetitive AVALANCHE Energy 30mJdv/dtPeak Diode Recovery dv/dt Junction-55 to 150 TSTGS torage Temperature Range CLead Temperature300 ( in. ( ) from case for 10s) (typical)gThe HEXFET technology is the key to InternationalRectifier s advanced line of power MOSFET efficient geometry and unique processing of thislatest State of the Art design achieves: very low on-state resistance combined with high transconductance;superior reverse energy and diode recovery HEXFET transistors also feature all of the wellestablished advantages of MOSFETs such as voltagecontrol, very fast switching, ease of paralleling andtemperature stability of the electrical are well suited for applications such as switchingpower supplies, motor controls, inverters, choppers,audio amplifiers and high energy pulse AVALANCHE AND dv/dt RATEDIRF460 HEXFET TRANSISTORSTHRU-HOLE (TO-204AA/AE) , N-CHANNELTO-3 Product Summary Part Number BVDSS RDS(on)ID IRF460 500V 21 AFeatures.

2 REPETITIVE AVALANCHE Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Parallelingp 2 D2 2 2 2 2 ResistanceParameterMin Typ MaxUnitsTest ConditionsRthJCJunction to Case to Ambient 30222222222222 Typical socket mount C/WSource-Drain Diode Ratings and CharacteristicsParameterMin Typ MaxUnitsTest ConditionsISContinuous Source Current (Body Diode) 21 ISMP ulse Source Current (Body Diode) 84 VSDD iode Forward Voltage Tj = 25 C, IS = 21A, VGS = 0V trrReverse Recovery Time 580nsTj = 25 C, IF = 21A, di/dt 100A/ sQRRR everse Recovery Charge CVDD 50V tonForward Turn-On TimeIntrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + 2 D2 2 2 2 2 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified)ParameterMinTyp MaxUnitsTest ConditionsBVDSSD rain-to-Source Breakdown Voltage500 VVGS = 0V, ID = BVDSS/ TJTemperature Coefficient of Breakdown V/ CReference to 25 C, ID = (on)Static Drain-to-Source On-State VGS = 10V, ID = 14A Resistance VGS = 10V, ID = 21A VGS(th)Gate Threshold V VDS = VGS, ID = 250 AgfsForward Transconductance13 SVDS = 15V, IDS = 14A IDSSZero Gate Voltage Drain Current 25 VDS = 400V, VGS = 0V 250 VDS = 400 VVGS = 0V, TJ = 125 CIGSSGate-to-Source Leakage Forward 100 VGS = 20 VIGSSGate-to-Source Leakage Reverse -100 VGS = -20 VQgTotal Gate Charge84 190 VGS = 10V, ID = 21 AQgsGate-to-Source Charge12 27nCVDS = 250 VQgdGate-to-Drain ( Miller ) Charge60 135td(on)

3 Turn-On Delay Time 35 VDD = 250V, ID = 21A,trRise Time 120RG = td(off)Turn-Off Delay Time 130 tfFall Time 98LS + LDTotal Inductance CissInput Capacitance 4300 VGS = 0V, VDS = 25 VCossOutput Capacitance 1000 pFf = Transfer Capacitance 250 nAnHns A Measured from drain lead (6 frompackage) to source lead (6 frompackage) 2RF22x 2y E F2 p 2PF22 2y 2g p 2IF22 2y 2g p 2QF22 2 2g 2VF22w 2 2y 2e p 2TF22 2q 2g 2 Fq E E 2 p 2SF22 2g 2 Fh E E 2 p 2UF22 2 Eh 2h p $ 2 IQ2 82 1101001000 VDS , Drain-to-Source Voltage (V) , Drain-to-Source Current (A)Tc = 25 CTj = 150 CSingle Pulse1ms10ms100 sDCOPERATION IN THIS AREA LIMITED BY RDS(on) 2IH F22 $ 2 2 2g VDS90%10%VGStd(on)trtd(off)tfp 2IH F22 $ 2 2 & h 2 2 1 h 2p 2 % h q qhF F FIH +- hhp 2 IIF22w 2i & 2 2 2s D2t E Eg p 2WF22w 2h 2g 2 Fg 2 F50K .2 F12 VCurrent RegulatorSame Type as Sampling Resistors+-IH2 p 2IQ F22q 2g 2 2g p 2IQ F22f 2q 2g 2 & p 2IP F22w 2e& 2i F2h 2g p 2IP F22 2s & 2 & p 2IP F22 2s & 2 2g tpV(BR) +-VDDDRIVERA15V20 VIH Footnotes: 2 ISD 21A, di/dt 160A/ s,VDD 500V, TJ 150 CSuggested RG = 2 REPETITIVE Rating; Pulse width limited by maximum junction temperature.

4 22 VDD = 50V, starting TJ = 25 C, Peak IL = 21A,22 22 Pulse width 300 s; Duty Cycle 2%Case Outline and Dimensions TO-204AE (Modified TO-3)IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at for sales contact information. Data and specifications subject to change without notice. 09/2014