SLPS390A –JUNE 2013–REVISED MARCH 2015 …

1 Qg - Gate Charge (nC)VGS - Gate-to-Source Voltage (V)036912150246810D004ID = 25 AVDS = 30 VVGS - Gate-to-Source Voltage (V)RDS(on) - On-State Resistance (m:)0246810121416182004812162024283236D0 07TC = 25 C, ID = 25 ATC = 125 C, ID = 25 AGate (Pin 1)Drain (Pin 2)Source (Pin 3)ProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityCSD18537 NKCSSLPS390A JUNE2013 REVISEDMARCH2015 CSD18537 NKCS60 V N-ChannelNexFET PowerMOSFET1 FeaturesProductSummary1 UltraLow Qgand QgdTA= 25 CTYPICALVALUEUNIT Low ThermalResistanceVDSD rain-to-SourceVoltage60V AvalancheRatedQgGateChargeTotal(10 V) Pb FreeTerminalPlatingVGS= 6 V14m RoHSCompliantRDS(on)

2 Drain-to-SourceOn-ResistanceVGS= 10 V11m HalogenFreeVGS(th)ThresholdVoltage3V TO-220 PlasticPackageOrderingInformation(1)2 ApplicationsDevicePackageMediaQtyShip HighSideSynchronousBuckConverterCSD18537 NKCSTO-220 PlasticPackageTube50 Tube MotorControl(1) For all availablepackages,see the orderableaddendumatthe end of the DescriptionAbsoluteMaximumRatingsThis 11 m , 60 V TO-220 NexFET powerMOSFETis designedto minimizelossesin powerconversionTA= 25 20 VContinuousDrainCurrent(Packagelimited)5 0 ContinuousDrainCurrent(Siliconlimited),5 6 IDTC= 25 CAContinuousDrainCurrent(Siliconlimited) ,39TC= 100 CIDMP ulsedDrainCurrent(1)127 APDP owerDissipation94 WTJ,OperatingJunctionand 55 to 175 CTstgStorageTemperatureRangeAvalancheEne rgy,singlepulseEAS55mJID= 33 A, L = mH, RG= 25 (1) Max R JC= C/W,pulseduration 100 s, duty cycle 1%RDS(on)vs VGSRDS(on)

3 Vs VGS1An IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JUNE2013 Deviceand MechanicalPackaging,and RevisionHistoryNOTE:Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (June2013)to RevisionAPage Addedpart numberto title ..1 Increasedthe TC= 25 continuousdraincurrentto 56 Increasedthe TC= 125 continuousdraincurrentto 39 A ..1 Increasedthe pulseddraincurrentto 127 A.

4 1 Increasedthe max powerdissipationto 94 W ..1 Increasedthe max operatingjunctionand storagetemperatureto 175 ..1 Updatedthe UpdatedFigure1 froma normalizedR JAto an R UpdatedFigure6 to extendto 175 C ..5 UpdatedFigure8 to extendto 175 C ..5 Updatedthe SOAin Figure10 ..6 UpdatedFigure12 to extendto 175 C ..62 SubmitDocumentationFeedbackCopyright 2013 2015 , JUNE2013 REVISEDMARCH20155 (TA= 25 C unlessotherwisestated)PARAMETERTESTCONDI TIONSMINTYPMAXUNITSTATICCHARACTERISTICSB VDSSD rain-to-SourceVoltageVGS= 0 V, ID= 250 A60 VIDSSD rain-to-SourceLeakageCurrentVGS= 0 V, VDS= 48 V1 AIGSSGate-to-SourceLeakageCurrentVDS= 0 V, VGS= 20 V100nAVGS(th)Gate-to-SourceThresholdVolt ageVDS= VGS, ID= 250 6 V, ID= 25 A1418m RDS(on)

5 Drain-to-SourceOn-ResistanceVGS= 10 V, ID= 25 A1114m g sTransconductanceVDS= 30 V, ID= 25 A100 SDYNAMICCHARACTERISTICSCissInputCapacita nce11401480pFCossOutputCapacitanceVGS= 0 V, VDS= 30 V, = 1 QgGateChargeTotal(10 V) 30 V, ID= 25 (th)GateChargeat 30 V, VGS= 0 V25nCtd(on)TurnOn 30 V, VGS= 10V,IDS= 25 A, RG= 0 td(off)TurnOff Fall 25 A, VGS= 0 30 V, IF= 25 A,di/dt = 300 A/ (TA= 25 C unlessotherwisestated)THERMALMETRICMINTY PMAXUNITR C/WR JAJunction-to-AmbientThermalResistance62 Copyright 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks:CSD18537 NKCSVDS - Drain-to-Source Voltage (V)IDS - Drain-to-Source Current (A) = 6 VVGS = 8 VVGS = 10 VVGS - Gate-to-Source Voltage (V)IDS - Drain-to-Source Current (A)0123456780102030405060D003TC = 125 CTC = 25 CTC = -55 CCSD18537 NKCSSLPS390A JUNE2013 (TA= 25 C unlessotherwisestated)Figure1.

6 TransientThermalImpedanceVDS= 5 VFigure2. SaturationCharacteristicsFigure3. TransferCharacteristics4 SubmitDocumentationFeedbackCopyright 2013 2015 ,TexasInstrumentsIncorporatedProduct FolderLinks:CSD18537 NKCSVSD - Source-to-Drain Voltage (V)ISD - Source-to-Drain Current (A) = 25 CTC = 125 CTC - Case Temperature ( C)Normalized On-State Resistance-75-50-250255075100125150175 = VVGS = 10 VTC - Case Temperature ( C)VGS(th) - Threshold Voltage (V)-75-50-250255075100125150175 - Gate-to-Source Voltage (V)RDS(on) - On-State Resistance (m.)

7 0246810121416182004812162024283236D007TC = 25 C, ID = 25 ATC = 125 C, ID = 25 AQg - Gate Charge (nC)VGS - Gate-to-Source Voltage (V)036912150246810D004 VDS - Drain-to-Source Voltage (V)C - Capacitance (pF) = Cgd + CgsCoss = Cds + CgdCrss = JUNE2013 REVISEDMARCH2015 TypicalMOSFETC haracteristics(continued)(TA= 25 C unlessotherwisestated)ID= 25 AVDS= 30 VFigure5. CapacitanceFigure4. GateChargeID= 250 AFigure7. On-StateResistancevs Gate-to-SourceVoltageFigure6. ThresholdVoltagevs TemperatureID= 25 AFigure8. NormalizedOn-StateResistancevs TemperatureFigure9.

8 TypicalDiodeForwardVoltageCopyright 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks:CSD18537 NKCSTC - Case Temperature ( C)IDS - Drain-to-Source Current (A)-50-250255075100125150175 200010203040506070D012 VDS - Drain-to-Source Voltage (V)IDS - Drain-to-Source Current (A) ms1 ms100 s10 sTAV - Time in Avalanche (ms)IAV - Peak Avalanche Current (A) = 25G CTC = 125G CCSD18537 NKCSSLPS390A JUNE2013 (continued)(TA= 25 C unlessotherwisestated)SinglePulse,Max R JC= C/WFigure10.

9 MaximumSafeOperatingArea(SOA)Figure11. SinglePulseUnclampedInductiveSwitchingFi gure12. MaximumDrainCurrentvs Temperature6 SubmitDocumentationFeedbackCopyright 2013 2015 , JUNE2013 REVISEDMARCH20156 Deviceand a trademarkof othertrademarksare the propertyof leadsshouldbe shortedtogetheror the deviceplacedin conductivefoamduringstorageor handlingto preventelectrostaticdamageto the TI glossarylists and explainsterms,acronyms,and 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks.

10 CSD18537 NKCSCSD18537 NKCSSLPS390A JUNE2013 MechanicalPackaging,and OrderableInformationThe followingpagesincludemechanical,packagin g,and the mostcurrentdataavailablefor the subjectto changewithoutnoticeand revisionofthis browser-basedversionsof this datasheet,referto the :1. All lineardimensionsare in inches2. This drawingis subjectto changewithoutnotice3. LeadDimensionsare not controlledwithin"C" area4. All lead dimensionsapplybeforesolderdip5. The centerlead is in electricalcontactwith the mountingtab6.