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LM136-2.5,LM236-2.5,LM336-2 - TI.com

LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated cir-cuits are …

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www.ti.com SNVS749F - Texas Instruments

LM136-2.5-N SNVS749F – MAY 1998– REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) Temperature Drift Figure 13. …

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MSP430x2xx Family User's Guide (Rev. J) - TI.com

MSP430x2xx Family User's Guide Literature Number: SLAU144J December 2004– Revised July 2013

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1.8-V Micropower CMOS Operational Amplifier …

5 OPA2333-HT www.ti.com SBOS483I –JULY 2009–REVISED MAY 2015 Product Folder Links: OPA2333-HT Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback

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LMC6482 CMOS Dual Rail-To-Rail Input and Output ...

LMC6482 www.ti.com SNOS674E –NOVEMBER 1997–REVISED APRIL 2015 5 Pin Configuration and Functions D, DGK and P Packages 8-Pin SOIC, VSSOP and PDIP (Top View) Pin Functions PIN TYPE DESCRIPTION NO.

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OPAx354 250-MHz, Rail-to-Rail I/O, CMOS …

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Analog linearization of resistance temperature …

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TMS320C28x DSP/BIOS 5.x Application …

SPRU625L—August 2012 API Functional Overview 9 Submit Documentation Feedback www.ti.com Naming Conventions 1.2 Naming Conventions The format for a DSP/BIOS operation name is a 3- or 4-letter prefix for the module that contains the

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Dual Channel, High Speed Optocouplers - linearparts.com

2 These dual channel optocouplers are available in an 8 Pin DIP and in an industry standard SO-8 package. The following is a cross reference table listing the 8 Pin

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30V P-Channel MOSFET

AON7405 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -10V) < 6.2mΩ R DS(ON) (at V GS = -6V) < 8.9mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AON7405 uses advanced trench technology to-30V provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery protection

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N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP low ...

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AOD4185/AOI4185 P-Channel Enhancement Mode Field …

AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45-V GS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics

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P-Channel 2.5 V (G-S) MOSFET

Vishay Siliconix Package Information Document Number: 71196 09-Jul-01 www.vishay.com 1 SOT-23 (TO-236): 3-LEAD b 1E 1 3 2 S e e1 D A 2 A1 C Seating Plane 0.10 mm 0.004"

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DMG2305UX - Diodes Incorporated

DMG2305UX Document number: DS36196 Rev. 7 - 2 © Diodes Incorporated 1 of 6 www.diodes.com September 2018 DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV

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An introduction to Depletion-mode MOSFETs

An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the

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