ADN2880 3.2 Gbps, 3.3 V Low Noise, …

1 gbps , V, low noise , transimpedance amplifier ADN2880 . FEATURES GENERAL DESCRIPTION. Bandwidth: GHz The ADN2880 is a V, high gain SiGe transimpedance Optical sensitivity: dBm 1 amplifier (TIA). The TIA converts the small signal current of a Differential transimpedance : 4400 V/A photo detector into differential voltage output. The ADN2880 . Power dissipation: 70 mW features a 315 nA typical input-referred noise , enabling an Differential output swing: 260 mV p-p optical sensitivity of dBm ( A/W PIN). With a Input overload current: mA p-p bandwidth of GHz, the ADN2880 allows a data rate On-chip RSSI function operation up to gbps . Typical power dissipation is Low frequency cutoff: 20 kHz approximately 70 mW.

2 On-chip PD filter: RF = 200 , CF = 20 pF. Die size: mm mm To facilitate the assembly in small form factor packages, such as TO-46 headers, the ADN2880 provides an on-chip RC filter APPLICATIONS (200 , 20 pF) and features a 20 kHz low frequency cutoff without using an external capacitor. An on-chip RSSI circuit, gbps or below optical receivers which generates a voltage proportional to the average photo- SONET/GbE/FC optical receivers diode current, is also available for power monitoring and SFF-8472-compliant receivers assembly alignment. PIN/APD-TIA receive optical subassemblies (ROSA). The ADN2880 is available in die form. With a chip area of mm mm, the TIA layout is specifically optimized for TO-Can-based packages.

3 1. Based on 1550 nm PIN, responsivity = A/W, ER = 9 dB, BER < 10 10. FUNCTIONAL BLOCK DIAGRAM. VCCFILTER VCC. 200 50 50 . FILTER 1400 OUT. OUTB. IN. 20pF 5mA. RSSI. GND GND CAP. 04945-001. Figure 1. Rev. 0. Information furnished by analog devices is believed to be accurate and reliable. However, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, Box 9106, Norwood, MA 02062-9106, license is granted by implication or otherwise under any patent or patent rights of analog devices . Tel: Trademarks and registered trademarks are the property of their respective owners.

4 Fax: 2005 analog devices , Inc. All rights reserved. ADN2880 . TABLE OF CONTENTS. Features .. 1 Pad Layout and Function Descriptions ..5. 1 Typical Performance Characteristics ..6. General Description .. 1 Assembly Functional Block Diagram .. 1 Outline Dimensions .. 12. Revision History .. 2 Die 12. Electrical Specifications .. 3 Ordering Guide .. 12. Absolute Maximum 4. ESD 4. REVISION HISTORY. 7/05 Revision 0: Initial Version Rev. 0 | Page 2 of 12. ADN2880 . ELECTRICAL SPECIFICATIONS. Minimum/maximum VCC = V V, TAMBIENT = 40 C to +95 C; typical VCC = V, TAMBIENT = 25 C, unless otherwise noted. Table 1. Parameter Conditions Min Typ Max Unit DYNAMIC PERFORMANCE. Bandwidth (BW) 1 3 dB GHz Total Input Referred RMS noise (IRMS) CD = pF, dc to GHz 315 485 nA.

5 Total Input Referred RMS noise (IRMS) CD = pF, dc to GHz 300 nA. Small Signal transimpedance (ZT)1 100 MHz, differential 2700 4400 6200 V/A. 100 MHz, single-ended 1350 2200 3100 V/A. Low Frequency Cutoff CAP = open, IIN = 20 A 20 kHz CAP = 1 nF, IIN = 20 A kHz Output Return Loss DC to GHz, differential 26 20 dB. Input Overload Current ER = 10 dB, at 95 C1 mA p-p Maximum Differential Output Swing IIN, P- P = mA 170 260 375 mV p-p Output Data Transition Time IIN, P-P = mA; 20% to 80% rise/fall time 60 ps PSRR IIN = 0 mA, <10 MHz 39 dB. Group Delay Variation GHz to GHz 50 ps transimpedance Ripple 50 MHz to GHz, single-ended dB. Deterministic Jitter 10 A < IIN, P- P 100 A, @ gbps 16 ps p-p 100 A < IIN, P- P mA, @ gbps 25 ps p-p 10 A < IIN, P- P mA, PRBS 231 1 at OC48 (FEC) 38 ps p-p Linear Output Range Differential, <1 dB compression 210 mV p-p Linear Input Current Range Single-ended, <1 dB compression 53 A p-p DC PERFORMANCE.

6 Power Dissipation IIN, AVE = 0 mA 70 110 mW. Input Voltage Compliance voltage V. Output Common-Mode Voltage DC (50 ) terminated to VCC VCC V. Output Impedance Single-ended 50 . PD FILTER Resistance RF 200 . PD FILTER Capacitance CF 20 pF. RSSI Gain IIN, AVE = 5 A to 1 mA V/mA. RSSI Offset IIN, AVE = 10 A mV. RSSI Accuracy 5 A < IIN, P- P 20 A 7 %. 20 A < IIN, P- P 1 mA 3 %. 1. An equivalent IIN, P-P = 13 A current signal is applied to the TIA input. No input capacitor is applied. Rev. 0 | Page 3 of 12. ADN2880 . ABSOLUTE MAXIMUM RATINGS. Table 2. Parameter Rating Stresses above those listed under Absolute Maximum Rating Supply Voltage (VCC to GND) 5V may cause permanent damage to the device. This is a stress Maximum Voltage to All Input VCC + V rating only; functional operation of the device at these or any and Output Signal Pins other conditions above those indicated in the operational Minimum Voltage to All Input GND V.

7 Section of this specification is not implied. Exposure to absolute and Output Signal Pins maximum rating conditions for extended periods may affect Maximum Input Current 10 mA. device reliability. Storage Temperature Range 65 C to +125 C. Operating Ambient Temperature Range 40 C to +95 C. Maximum Junction Temperature 125 C. Die Attach Temperature (<30 sec) 410 C. ESD CAUTION. ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges.

8 Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0 | Page 4 of 12. ADN2880 . PAD LAYOUT AND FUNCTION DESCRIPTIONS. VCC VCC VCCFILTER GND. GND 1 17 16 15 14 13 GND. IN 2. 12 OUT. TEST 3. 11 OUTB. FILTER 4. FILTER 5 6 7 8 9 10 GND. 04945-002. GND RSSI CAP GND. Figure 2. Pad Layout Table 3. Pad Function Descriptions Pad No. Mnemonic Pin Type 1 Description 1 GND P Ground. (Input return.). 2 IN AI Current Input. Bond directly to a photodiode (PD) anode. 3 TEST AI Test Probe Pad. Do not connect. 4, 5 FILTER AO Filter Output. Pad 4 and Pad 5 are metal connected. Optional bond to a PD cathode. 6 GND P Ground. 7 RSSI AO Voltage Output. Provides average input current monitoring.

9 If not used, connect to ground. 8 CAP AI Low Frequency Cutoff (LFC) Setpoint. For SONET applications, see Figure 10 and contact sales for assembly details. 9, 10, 13, 14 GND P Ground. (Output return.). 11 OUTB AO Negative Output, CML, On-Chip 50 Termination (AC or DC Termination). 12 OUT AO Positive Output, CML, On-Chip 50 Termination (AC or DC Termination). 15 VCCFILTER P On-Chip Filter Supply. Connect to VCC to Enable On-Chip RC Filter (200 , 20 pF). Leave unconnected if not used. 16, 17 VCC P V Supply. Place a 200 pF, RF decoupling capacitor close to the power pad to reduce the power noise . 1. P = power; AI = analog input; and AO = analog output. Rev. 0 | Page 5 of 12. ADN2880 . TYPICAL PERFORMANCE CHARACTERISTICS.

10 70. 65. 60 QB OUTPUT BANDWIDTH (GHz). 55. 50. TZ (dB- ). 45. 40. 35. Q OUTPUT 30. 04945-019. 25. 04945-017. 40 20 0 20 40 60 80 100. 10M 100M 1G 10G 100G. TEMPERATURE ( C). FREQUENCY (Hz). Figure 3. Single-Ended transimpedance vs. Frequency Figure 6. Bandwidth vs. VCC and Temperature 90. 85. 80. POWER DISSIPATION (mW). 75. TZ (k ). 70. 65. 60. 55. 50. 04945-018. 04945-020. 40 20 0 20 40 60 80 100 40 20 0 20 40 60 80 100. TEMPERATURE ( C) TEMPERATURE ( C). Figure 4. Differential transimpedance vs. VCC and Temperature Figure 7. Power Dissipation vs. VCC and Temperature 20. 25. 30. TZ (k ). SDD22. 35. 40. 45. 50. 04945-027. 04945-021. 0 10 20 30 40 50 60 70 80 90 100 10M 100M 1G 4G. IINPP ( A) FREQUENCY (Hz).