30V P-Channel MOSFET

1 AO4407A30V P-Channel MOSFETP roduct SummaryVDS= -30 VID= -12A (VGS= -20V)RDS(ON)< 11m (VGS= -20V)RDS(ON)< 13m (VGS= -10V)RDS(ON)< 17m (VGS= -6V)100% UIS Tested100% Rg TestedGeneral DescriptionThe AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free ComplaintSOIC-8 Top View Bottom View June , TSTGP arameterSymbolTypMaxt 10s3240 Steady State6075 Steady StateR C-55 to 150 WMaximum Junction-to-Lead C C/WThermal CharacteristicsUnitsMaximum Junction-to-Ambient A C/WMaximum Junction-to-Ambient A C/WR JADrain-Source VoltagePulsed Drain Current B-30 Absolute Maximum Ratings TA=25 C unless otherwise notedContinuous DrainCurrent AUnitsParameterTA=25 CTA=70 CJunction and Storage Temperature RangeTA=70 CIDGate-Source VoltagePDAvalanche Current GRepetitive avalanche energy L= GPower Dissipation ATA=25 June = 55 C-5 IGSS 100nAVGS(th) (ON) , VDS=-15V, f=1 MHzInput CapacitanceOutput Capacitancem SWITCHING PARAMETERSGate Source ChargeTotal Gate ChargeV=-10V, V=-15V, I=-12 ADYNAMIC PARAMETERSM aximum Body-Diode Continuous CurrentGate resistanceVGS=0V, VDS=0V, f=1 MHzRDS(ON)

2 Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageVGS = -6V, ID = -10 AIS = -1A,VGS = 0 VVDS = -5V, ID = -10 AVGS = -10V, ID = -12 AGate Threshold VoltageVDS = VGS ID = -250 AVDS = -30V, VGS = 0 VVDS = 0V, VGS = 25 VZero Gate Voltage Drain CurrentGate-Body leakage currentElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS ADrain-Source Breakdown VoltageOn state drain currentID = -250 A, VGS = 0 VVGS = -10V, VDS = -5 VVGS = -20V, ID = -12 AReverse Transfer June (on) (off)24nstf12nstrr3040nsQrr22nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT DelayTimeVGS=-10V, VDS=-15V, RL= ,RGEN=3 Turn-Off Fall TimeTurn-On DelayTimeTurn-On Rise TimeGate Source ChargeGate Drain ChargeVGS=-10V, VDS=-15V, ID=-12 ABody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-12A, dI/dt=100A/ sIF=-12A, dI/dt=100A/ sA: The value of R JAis measured with the device mounted on 1 in2FR-4 board with 2oz.

3 Copper, in a still air environment with TA = 25 C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance : Repetitive rating, pulse width limited by junction The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance EARand IARratings are based on low frequency and duty cycles to keep Tj= June ELECTRICAL AND THERMAL CHARACTERISTICS020406080012345-ID(A)-VDS (Volts)Figure 1: On-Region (A)-VGS(Volts)Figure 2: Transfer Characteristics25 C125 CVDS= -5V05101520 RDS(ON)(m )VGS=-10 VVGS=-6 VVGS= Normalized On-ResistanceVGS= June , dI/dt=100A/ s0048121620-ID(A)Figure 3: On-Resistance vs.

4 Drain Current and Gate Voltage1E-061E-051E-041E-031E-021E-011E+ 001E+ (A)-VSD(Volts)Figure 6: Body-Diode Characteristics25 C125 0255075100125150175 Normalized OnTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature51015202530345678910 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source VoltageID=-12A25 125 June ELECTRICAL AND THERMAL CHARACTERISTICS0 2 4 6 8 10 051015202530-VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030000 51015202530 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrss1101001000100 00 Power (W) (Amps)100 s10ms1ms100mss10sDCRDS(ON) limitedTJ(Max)=150 CTA=25 C10 sVDS=-15 VID=-12 ATJ(Max)=150 CTA=25 June Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)DCJ(Max)TA=25 CSingle PulseD=Ton/TTJ,PK=TA+ JAR JA=75 C/WTonTPDIn descending orderD= , , , , , , single June D CIgV d sD U TV D CV gsV g sQ gQ gsQ g dC harg eG ate C harg e T est C ircuit & W aveform-+-+-10 VUnclamped Inductive Switching (UIS) Test Circuit & WaveformsL2E = 1/2 LIARARVDCDUTVddVgsVdsVgsRLRgResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) June Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveform sVds -Vds +dI/dtR MrrVddVddQ = - June