AO3415 Rev7 RoHS BUP019A - Alpha & Omega Semiconductor

1 AO3415 General DescriptionProduct Summary-20V ID (at VGS= )-4A RDS(ON) (at VGS= )< 41m RDS(ON) (at VGS= )< 53m RDS(ON) (at VGS= )< 65m ESD protectedSymbolVDSV-20 Absolute Maximum Ratings TA=25 C unless otherwise notedDrain-Source VoltageThe AO3415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as This device is suitable for use asa load switch P-Channel MOSFETU nitsMaximumParameterDGSSOT23 Top View Bottom View SGDVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JLV-20 Drain-Source Voltage 8 Gate-Source VoltageTA=25 CTA=70 C/WR JA658580-30 Pulsed Drain Current C C/W C/W1004352 Thermal CharacteristicsPDTA=25 C1 Units CMax-55 to CID-4 Continuous DrainCurrentAMaximum Junction-to-LeadParameterTypJunction and Storage Temperature RangeMaximum Junction-to-Ambient A DMaximum Junction-to-Ambient APower Dissipation B Rev 7.

2 Sep 2011 1 of 5 AO3415 SymbolMinTypMaxUnitsBVDSS-20 VVDS=-20V, VGS=0V-1TJ=55 C-5 IGSS 10 AVGS(th)Gate Threshold (ON)-30A3441TJ=125 C49594253m 5265m 61m Gate Voltage Drain Current AElectrical Characteristics (TJ=25 C unless otherwise noted)ParameterConditionsSTATIC PARAMETERSD rain-Source Breakdown VoltageID=-250 A, VGS=0 VGate-Body leakage currentVDS=0V, VGS= 8 VVDS=VGS, ID=-250 On state drain currentVGS= , VDS=-5 VRDS(ON)Static Drain-Source On-ResistanceVGS= , ID=-4Am VGS= , ID=-4 AVGS= , ID=-2 AVGS= , ID=-1 AForward TransconductanceVDS=-5V, ID=-4 ADiode Forward VoltageIS=-1A,VGS=0 VMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERSI nput CapacitanceVGS=0V, VDS=-10V, f=1 MHzOutput CapacitanceReverse Transfer CapacitanceSWITCHING PARAMETERST otal Gate ChargeVGS= , VDS=-10V, ID=-4 AGate Source ChargeGate Drain ChargeGate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-On DelayTimetD(on)13nstr9nstD(off)19nstf29n strr202632nsQrr405162nCCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

3 AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeIF=-4A, dI/dt=500A/ sTurn-On DelayTimeVGS= , VDS=-10V, RL= ,RGEN=3 Turn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeIF=-4A, dI/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedance from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 7: Sep 2011 2 of 5 AO3415 TYPICAL ELECTRICAL AND THERMAL (A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)204060801000246810 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)25 C125 CVDS=-5 VVGS= (A)-VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= , VGS= , VGS= , VGS= (Note E) + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C2040608010012002468 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=-4A25 C125 C Rev 7: Sep 2011 3 of 5 AO3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS012345024681012-VGS(Volts )Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800100012001400 05101520 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=-10 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) (Amps)-VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 s10ms100msTJ(Max)=150 CTA=25 CAmbient (Note F)Figure 9.

6 Maximum Forward Biased Safe Operating Area (Note F) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TA+ JAIn descending orderD= , , , , , , single pulseR JA=100 C/WTonTPD Rev 7: Sep 2011 4 of 5 AO3415 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10VD U TLV gsIsdD io d e R e co ve ry T e st C ircu it & W a ve fo rm sV d s -V ds +dI/d trrQ = - Idttrr-IsdF-IV D CD U TV ddV gsV dsV gsR LR gR e sistive S w itch in g T e st C ircuit & W a ve fo rm s-+V gsV dstttttt90%10%ro nd(o ff)fo ffd(o n)IgV gs-+V D CIsddI/d tR MV ddV dd-V d s-I Rev 7: Sep 2011 5 of 5