BSS84 P-channel enhancement mode vertical DMOS …

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2 Product General descriptionP- channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS)transistor in a small Surface-Mounted Device (SMD) plastic package.[1]/DG: Quick reference dataBSS84P- channel enhancement mode vertical DMOS transistorRev. 06 16 December 2008 Product data sheetTable overviewType number[1]PackageNXPJEDECBSS84 SOT23TO-236 ABBSS84/DGnLow threshold voltagenDirect interface to CMOS andTransistor-Transistor Logic (TTL)nHigh-speed switchingnNo secondary breakdownnLine current interrupter in telephone setsnRelay, high-speed and line transformerdriversnVDS 50 VnID 130 mAnRDSon 10 nPtot 250 mWBSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20082 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor2. Pinning information3. Ordering information[1]/DG: halogen-free4. Marking[1]/DG: halogen-free[2]* = -: made in Hong Kong* = p: made in Hong Kong* = t: made in Malaysia* = W: made in ChinaTable outlineGraphic symbol1 GgateSOT23 (TO-236AB)2 Ssource3 Ddrain123 GDS001aaa025 Table informationType number[1]PackageNameDescriptionVersionBS S84TO-236AB plastic surface-mounted package; 3 leadsSOT23 BSS84 /DGTable codesType number[1]Marking code[2]BSS8413* BSS84 /DGZV*BSS84_6 NXP 2008.

3 All rights data sheetRev. 06 16 December 20083 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor5. Limiting values[1]Device mounted on a Printed-Circuit Board (PCB).Table valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUn itVDSdrain-source voltage25 C Tj 150 C- 50 VVGS gate-source voltage- 20 VIDdrain currentTsp=25 C; VGS= 10 V;seeFigure1- 130mATsp= 100 C;VGS= 10 V- 75mAIDM peak drain currentTsp=25 C; tp 10 s;seeFigure1- 520mAPtottotal power dissipationTsp=25 C; seeFigure2[1]-250mWTstgstorage temperature 65+150 CTjjunction temperature 65+150 CTsp=25 C(1) RDSonlimitationFig operating area; continuous and peak drain currents as a function of drain-source voltagemld251 VDS (V) 1 102 10 102 10 103ID(mA) 11 ms 10 ms 100 msDC(1)tp =10 s100 sBSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20084 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor6.

4 Thermal characteristics[1]Mounted on a PCB, vertical in still derating curve02003000100200mld199 Tamb ( C)50100150 Ptot(mW)Table characteristicsSymbolParameterConditions MinTypMaxUnitRth(j-a)thermal resistance fromjunction to ambientseeFigure3[1]--500K/WFig thermal impedance from junction to ambient as a function of pulse duration110103102tp (s)110mld250 Rth(j-a)(K/W)10 110 610 510 410 310 210210310 1 = =BSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20085 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor7. CharacteristicsTable C unless otherwise characteristicsV(BR)DSSdrain-source breakdownvoltageID= 10 A; VGS=0V 50--VVGS(th)gate-source thresholdvoltageID= 1 mA; VDS=VGS;seeFigure8Tj=25 C 2 VTj= 55 C-- leakage currentVDS= 40 V; VGS=0 VTj=25 C-- 100nAVDS= 50 V; VGS=0 VTj=25 C-- 10 ATj= 125 C-- 60 AIGSS gate leakage currentVGS= +20 V; VDS= 0 V--100nAVGS= 20 V; VDS= 0 V--100nARDS ondrain-source on-stateresistanceVGS= 10 V;ID= 130 mA;seeFigure5 and7-610 Dynamic characteristics|Yfs|transfer admittanceVDS= 25 V;ID= 130 mA50--mSCissinput capacitanceVGS=0V; VDS= 25 V;f = 1 MHz; seeFigure9- 2545pFCossoutput capacitance-1525pFCrssreverse timeVDS= 40 V; VGS=0 Vto 10 V; ID= 200 mA;seeFigure10 and11-3-nstoffturn-off timeVDS= 40 V;VGS= 10 V to 0 V;ID= 200 mA;seeFigure10 and11-7-nsBSS84_6 NXP 2008.

5 All rights data sheetRev. 06 16 December 20086 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistorTj=25 CTj=25 CFig characteristics: drain current as afunction of drain-source voltage; typicalvaluesFig on-state resistance as a functionof drain current; typical valuesTj=25 C; VDS= 10 V(1) ID= 130 mA; VGS= 10 V(2) ID= 20 mA; VGS= VFig characteristics: drain current as afunction of gate-source voltage; typical valuesFig drain-source on-state resistancefactor as a function of junction temperature0 2 10 12 600 2000 400mld197 4 6 8 VDS (V)VGS = 10 V V 6 V 5 V 4 V 3 V VID(mA)60040 1mld198 10 102 10320ID (mA)RDSon( )VGS = V 3 V V 10 V 5 V 4 V0 2 4 10 600 2000 400mld196 6ID(mA)VGS (V) 50Tj ( C)mld194(1)(2)RDSonRDSon(25 C)BSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20087 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor8. Test informationID= 1 mA; VDS=VGSVGS=0V; f = 1 MHzFig threshold voltage as a function ofjunction temperatureFig , output and reverse transfercapacitances as a function of drain-sourcevoltage; typical 50Tj ( C)VGSthVGSth(25 C)0806040200 10 20 30mld191C(pF)VDS (V)CissCossCrssFig 10.

6 Switching time test circuitFig 11. Input and output waveformsmld18950 VDS = 40 VID0 V 10 Vmbb69010 %90 %90 %10 %tontoffOUTPUTINPUTBSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20088 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor9. Package outlineFig 12. Package outline SOT23 (TO-236AB) e1 HELpQwv REFERENCESOUTLINEVERSIONEUROPEANPROJECTI ONISSUE DATE04-11-0406-03-16 IEC JEDEC (mm are the original dimensions) SOT23TO-236 ABbpDe1eAA1 LpQdetail XHEEwMvMABAB012 surface-mounted package; 3 leadsSOT23 BSS84_6 NXP 2008. All rights data sheetRev. 06 16 December 20089 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor10. Revision historyTable historyDocument IDRelease dateData sheet statusChange noticeSupersedesBSS84_620081216 Product data sheet-BSS84_5 Modifications: Table 5 Limiting values : Ptot figure reference updatedBSS84_520081209 Product data sheet-BSS84_4 BSS84_420070717 Product data sheet-BSS84_3 BSS84_320030804 Product specification-BSS84_2 BSS84_219970618 Product specification-BSS84_1 BSS84_119950407 Product specification--BSS84_6 NXP 2008.

7 All rights data sheetRev. 06 16 December 200810 of 11 NXP SemiconductorsBSS84P- channel enhancement mode vertical DMOS transistor11. Legal Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term short data sheet is explained in section Definitions .[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at DefinitionsDraft The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such data sheet A short data sheet is an extract from a full data sheetwith the same product type number(s) and title.

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9 NXP Semiconductors accepts no liability for inclusion and/or use ofNXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer s own Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or values Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) may cause permanentdamage to the device. Limiting values are stress ratings only and operation ofthe device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device and conditions of sale NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors.

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