サイリスタ特性の基礎 - Gunma U

1 1 385 2 Thyristor dV/dt dV/dt 3 Gate Turn OffThyristor Triode AC Switch dV/dt Baliga, Fundamentals of Power Semiconductor Devices, Springer Science + Business Media, 2008. Thyristor SCR (Silicon Controlled Rectifier) AC AC AC : 8kV.

2 5kA HVDC 100 kV Gate Turn-OffThyristor Triode AC Switch DC DC IGBT 4 AC AC Triac EMI Triac IGBT 5 Distance (Linear scale)Doping Concentration (Log scale) P+PN+N-N- J1J3J2 NDxJKNASNKSNBSxJAxJB P- P+: P N+: N P- : P J1: P+ N- J2: P- N- P Ga, Al B Ga: P+ Al: P- P- N- 6 Thyristor BVRBVF J1 J3: J2: J1 N- J1 J3: J2.

3 N- 7 8P+PN+N-J1J3J2PN- IKIGIKIGIAIA IG J3 N+ P NPN NPN PNP PNP IG PiN PiN 9-15-10-5051015-150-100-5005010015002468 1012141618 Anode Current (A)Anode Voltage (V)Time (ms)100 V-rms, f = 60 Hz, AC AC 10P+PN+N-J1J3J2WN IKIA E(y)E(y)WDWDyy J1 J3 J2 J1 J3 <50V EmEm PNPIKILWN = WDWN> WD WN = WD BVRT WN> WD BVPP = 1013 (cm 3) (V)Em Ec (ND) Em<EcJ1 J2 J2 = 2 2 11 = + = = 1 = =1 =1cosh = 2 =11 , E 1 : J2 PNP: PNP T: (1)M: LP: N- (1) IA = )VA: s: q: n: P+/N 6N- IL.

4 VA |VA| N- T M BVPP,A: J1 - 1201002003004005002E+133E+134E+135E+136E +137E+13 Drift Region Width ( m)Drift Region Doping Concentration (cm-3)0100020003000400020025030035040045 0500 Open-Base Breakdown Voltage (V)Drift Region Width ( m) 5 1013cm-37 1013cm-33 1013cm-3 : 2000 V : 2000 V = 10 s T M 287 m 1013cm-3 T M ND 13P+PN+N-J1J3J2WN IKIA E(y)E(y)WDNWDPyyEmEm PNPIAILP- NPNIKWPWDN P- J1 J3 J2 J2 N- BVRT,N P- BVRT,P , = 2 + 2 , = 2 2(ND)(NAP)

5 Em<Ec 14 = + + = = 1 + = + =1 =1cosh = 2 =11 , IA = )N- NPN: NPN BVPP,B: J2 n: P+/N 6 VA VA PNP : T E 1 NPN : E T VA - 1501000200030004000200250300350400450500 550600 Open-Base Breakdowm Voltage (V)Drift Region Width ( m)01002003004005006002E+133E+134E+135E+1 36E+137E+13 Drift Region Width ( m)Drift Region Doping Concentration (cm-3) 5 1013cm-37 1013cm-33 1013cm-3 : 2000 V = 10 s, NPN NPN= : 2000 VPNP T M 435 m 1013cm-3 T M ND 16P- N+N+N+WKSRBSN- P+ J2IL IL P- RBS N+ NPN 17P- RBSN- N+IESIEICIS RBSIESIEICISEBCNPNJ2A A : N+ (E)(B)(C) 18 IE = 1IO: q: Dn: np0: P- Ln: P- A: - VBE.

6 A - k: T: NPN: NPN NPN,S: NPN = 0 IES = + = 1+ , = = 1 1+ = +001E+011E+02 Current Gain NPN,SCurrent IES(A) (A)Emitter-Base Potential (V) 19 IESIEIS NPN IES, IE, IS VBE NPN,S IES VBE< IES IS P- VBE> IES IE IES NPN,S IES NPN,S NPN (Regenerative action) 20P- RBSN- N+IB(x) J2 WKS/2P+ dxxABJLJLJLJLJLJ3 P- dx dIB = Z: P- x IB(x) = 0 = P- dx = SB: N+ P- P- A-B = = dVB(x) = 0 2 = 28N+ 21 , =8 2 , = , 2=4 Vbi( ).

7 N+ P- SB N+ WKS 22 DdDZ P- , = =116 2+ 22ln 1 Regenerative action N+ = 4 2 N+ Base Voltage VB,max(V)Space D ( m) D VB,max 23d ( m)102550JL= 1 A/cm2 SB= 500 / d = 25 m VB,max< D < 550 m D = 550 m DZ= 100 m FS= 24 VASIFvAVFIHiA VAS: IH: (1) (2)NPN (3)NPN PNP Regenerative action (4) iA IH PiN (5) iA IH iA: vA.

8 25 (Regenerative action) J1 P+ N- J3 N+ P- P+ N- N- J2 N- P- P- NPN N+ P- P- J2 N- PNP P+ N- Regenerative action 26P+PN+N- J1J3J2 WNWP2dNDNABnpn=pnpn0P+p0N+ J1, J2, J3 N- P- AK J1 J3 J2 PiN = = 2 cosh sinh sinh 2cosh = + 2La: HL: JA: La= d 1 V at JA= 100 A/cm2x0 27P+PN+N-J1J3J2 PNPIAIL NPNIKIKIA IG = + + = + = + 1 P- N+N+N+WKSRBGN- P+ J2 WKG + =1 = = IG IG IGRBG Vbi = IGRBG>Vbi IGT: Ex.

9 IGT/Z = 16 mA/cm at SB= 500 / , WKG=1 mm, Vbi= V Z: 28rK1rK2P- N+N+N+RBGN- IG rdr dr dRBG = 2 = 2 PB: P- Wp: N+ P- P- = 1 2 2 = 2 ln 2 1 IGT =2 ln 2 1Ex. IGT= 30 mA at SB= 500 / , rK1= cm, rK2= cm, Vbi= V 29P- RBSN- N+IB(x) J2 WKS/2P+ dxxABJKN+ JKJKJKJ3JK: x ( )=1 x dx = =1 A = 0 21 =1 28 VB(A) < Vbi JH =8 1 2JH: Vbi SB JH SB JH 2 JH= A/cm2at SB=500 / , WKS=1000 m, NPN= , Vbi= 30 Regenerative action 31 N+ P- P- NPN , = 22 Wp: P- Dn: P- N- J2 P+ N- N- P+ N- N- PNP , = 22 WN: N- WDN: N- Dp.

10 Tt,NPN 50 ns tt,PNP 50 sat WN= 350 m tt,PNP VA N- 32 N- ENB = VA: N- = = N- , = = 2 tt,PNP 5 nsat WN= 350 m, p= 493 cm2/V/s, VA= 500 V N- VA N- P+ N- N+ P- 33 N- P- N- QSN = ( )JK: N+ NPN P- QSP JA: = + P+ PNP JG: NPN QSP , = = , tt,NPN: NPN PNP QSN tt,PNP: PNP , = = , (1)(4)(3)(2) 34 (1) (3) = , (5) (5) 2 2=1 , (6) (6) (2) (4) 2 2 , , = , (7) (7) = , , , 1(8) (8) (4) = , , 1 (9) tR JA JA,SS = , , ln , +1(10)JA,SS: tR NPN PNP 3502040608010012001234567 Anode Current Density (A/cm2)Time ( s)VA(V)1