1. MOSFETの物性とモデル化の基礎 - Gunma U

1 1. MOSFET 2014/6/26 MOSFET EDA SPICE Compact Model MOSFET Compact Model BSIM MOSFET BSIM MOSFET SPICE SPICE Y-Matrix EDA LSI UCB Stanford MIT Motorola, NXP, Xerox, TI, LSI STARC- MOSFET HiSIM-HV, HiSIM2 JFETUCB Bulk CMOS SP2000 PSP BSIM6- SOI CMOSBSIMSOI3, 4 DMOS, LDMOSHVMOS, IGBT, SiCJFETHiSIM-HV, HiSIM-IGBT, A-IGBT, A-LDMOS,A-SiC-JFET A-Self-heat* el-PoonEnhanced G-P RPI-TFT (p-Si)UOTFT TFT HP (a-Si) RPI-aTFTAA-TFT (a-Si) UCB Diode GaAs MESFET,HEMTC urticeStatz RootParker Tajima GaAs HBTUCSD, Agilent HBT *6 2 IEEE IMS-RFIC2014 (Florida, )

2 SPICE IGBT Table-lookup Model CAD Function Model Macro Model SPICE Compact Model Compact Model Y-Matrix Polynominal (n, p) J(Jn, Jp) RSLWRDn+n+XjLDLef fP-SiSiO2 MOSFET Compact Model MOSFET Level 1, 2, 3 BSIM1, 3.

3 4 EKV BSIM6 HiSIM2 PSP VDS=0 DC AC DC BSIM WCM2012 MOSFET BSIM BSIM1 L > m BSIM2 CAD L > m BSIM3 Hewlett-Packard L > m CMC bsim4 MOS MOS RF-MOSFET AC BSIM6 MOSFET bsim4 CMC Verilog-A MOSFET SPICE 2D Poisson 12 Nguyen and Plummer, IEDM 1981 [7].

4 Sub-threshold 2D 13 (x,y) Na To p u uL, uR, uB (x, y) Top Bottom Right uL=0 To p Bottom Left uR=0 To p Left Right uB=0 2D 14 2D 15 uB uL, uR SPICE MOSFET z (Lmask> 10 m)z n+n+VGVD= yx n+n+VGyxVD= (a) (b) IDidsatvdsatVDID idsatvdsatVDN MOSFET MOSFET Pao&Sah xI(x) W s s (x + x) s (x) ()()()driftdiffIxI xI x=+()()()sssxxxx =+ ()()()'driftIxWIxQxx = () ( )'sdriftIdIx WQdx = ()'IdifftdQIx Wdx =()''sIDSItddQIWQW dxdx = +x x + Dx ( ) (Q I) (W) Idrift x 0( t ) (x = 0) s0 Q I Q I0 (x = L) sL Q I Q IL IDS x = 0 x = L ()''00''0sLILsIQLDSIstIQIdxWQdWdQ = + ()''00''sLILsIQDSIstIQWIQddQL = + 12 DSDS DSII I=+()0'1sLsDSIsWIQdL = ()''20 LDStILIWIQQ = IDS1 IDS2 Q I s (Gradual Channel Approximation)

5 UCB MOSFET 2 Bulk ''''BIoxGBFBsoxQQCVVC = + C ox VGB VFB Q B 'BBAQqdN= dB NA 2sBsAdqN = xy () (),,nnndVJqnxy qnxydy == 00 ZWDnIdzJdx= dx n (x,y) Jn dx '2 BsAsQqN = '2sAoxqNC =''BoxsQC = ()''IoxGBFBssQCVV = QI ()()()()33'222210001223 DSoxGBFBsLssLssLsWICVVL = ()()11'22200 DSoxtsLstsLsWICL = + Surface Potential Charge Based HiSIM2.

6 PSP Model BSIM3/4/6 Model s0 sL BSIM6 BSIM6 Gauss MOSFET Poisson 01PD =+ BSIM6 Qi=0 P= S Vt S>Vt nq BSIM6 qi BSIM6 VTH EKV bsim4 BSIM6 VTH0 NDEPNDEPMOSFET CGSOCGBOCGDO CjCjswCjswCj TEG QC=QS+QD QS= W1 yLQndy0L QD= WyLQndy0L Qn QS QD Qc= QG+QB QB= QG CGS= QG VS CGB= QG VB CjCjswCjswCj CBS=Cj AS1 VBS/PBMj+CjSW PS1 VBS/PBMjSW CBD=Cj AD1 VBD/PBMj+CjSW PD1 VBD/PBMjSW CGSOCGBOCGDO CGB=CGBO L CGS=C01 VGS VDS Von2 VGS Von VDS2+CGSO W CGD=C01 VGS Von2 VGS Von VDS2+CGDO W VGS> Von+ VDS MOSFET RDDrainBulkSourceRSCGDOCGBOCGSOGateBSIM6 MOSFET CGDCGSCGBrDgDSrSirDiDirsCBDgBDgBS Y- M a t r i x MOSFET DrainRDRSBulkSourceGaterBDrBSIDSIBDIBSDx SxDSGBD

7 RainRDRSBulkSourceGaterBDrBSIDSIBDIBSDxS xDSGB MOSFET 000000 DSdsdsmmDSdsmmmbsdsmbsmbsmbsDGSBIggDggGI ggggggSggB = + ++ 1 bdbdBDBD bdbdBDBDggVIggVI + = + bsbsBSBS bsbsBSBSggVIggVI + = + MOSFET Y 11000011000011110000001101111000 DDSS dsmmbsdsbdmbsDDBDBD mmdsmmmbsdsbsmbsSBSbdmbsbsmbsbdbsBDBSBDB SDxSxDGSBRRDxRRSxggggggDRRrrGggSgggggggB Rrggggggrrrr ++ + ++ ++ ++ MOSFET = ?

8 ???????????sdgVVV VgVdVsGateGateDrain SourceDrainSourceMOSFET Y-Matrix MOSFET 3 MOS MIT 2 (1979 ) , , Physics of Semiconductor, 2nd (3rd ), S. M. Sze Device Electronics for Integrated Circuits, 2nd, Richard S. Muller, Theodore I. Kamins CMOS FET