Logic Controlled, 1 A, High-Side Load Switch with …

1 Logic controlled , 1 A, High-Side load Switch with Reverse current BlockingData sheet ADP198 Rev. G Document Feedback Information furnished by analog devices is believed to be accurate and reliable. However, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of analog devices .

2 Trademarks and registered trademarks are the property of their respective owners. One Technology Way, Box 9106, Norwood, MA 02062-9106, : 2011 2013 analog devices , Inc. All rights reserved. Technical Support FEATURES Low RDSON of 50 m @ V (WLCSP only) Low input voltage range: V to V 1 A continuous operating current Built-in level shift for control Logic that can be operated by V Logic Low A quiescent current @ VIN = V Low A shutdown current @ VIN = V Reverse current blocking Programmable start-up time Ultrasmall 1 mm 1 mm, 4-ball, mm pitch (WLCSP) Tiny 8-lead lead frame chip scale package (LFCSP)

3 Mm mm mm, mm pitch APPLICATIONS Mobile phones Digital cameras and audio devices Portable and battery-powered equipment TYPICAL APPLICATION CIRCUITS GNDENLOADVINVOUTADP198 LEVEL SHIFTAND SLEWRATE CONTROLOFFONREVERSEPOLARITYPROTECTION094 84-001+ Figure 1. WLCSP GNDENLOADVINSEL0 SEL1 VOUTVINVOUTADP198 SLEWRATE CONTROLLEVEL SHIFTOFFONREVERSEPOLARITYPROTECTION09484 -002+ Figure 2. LFCSP GENERAL DESCRIPTION The ADP198 is a High-Side load Switch designed for operation between V and V that is protected against reverse current flow from output to input.

4 A load Switch provides power domain isolation, thereby helping to keep subsystems isolated and powered independently and enabling reduced power consumption. The ADP198 contains a low on-resistance P-channel MOSFET that supports more than 1 A of continuous load current . The low A quiescent current and ultralow shutdown current make the ADP198 ideal for battery-operated portable equipment. The built-in level shifter for enable Logic makes the ADP198 compatible with modern processors and general-purpose input/output (GPIO) controllers.

5 The LFCSP version also allows the user to program the start-up time to control the inrush current at turn on. The ADP198 is available in an ultrasmall 1 mm 1 mm, 4-ball, mm pitch WLCSP. An 8-lead, 2 mm 2 mm mm, mm pitch LFCSP is also available. ADP198 data sheet Rev. G | Page 2 of 16 TABLE OF CONTENTS Features .. 1 Applications .. 1 Typical Application Circuits .. 1 General Description .. 1 Revision History .. 2 Specifications .. 3 Absolute Maximum Ratings .. 5 Thermal data .. 5 Thermal Resistance .. 5 ESD Caution.

6 5 Pin Configurations and Function Descriptions .. 6 Ty pi cal Performance Characteristics ..8 Theory of Operation .. 11 Applications Information .. 12 Ground current .. 12 Enable Feature .. 13 14 Diode OR ing Applications .. 15 Packaging and Ordering Information .. 16 Outline Dimensions .. 16 Ordering Guide .. 16 REVISION HISTORY 8/13 Rev. F to Rev. G Changed Input Voltage Range Condition from TJ = 40 C to +85 C to TJ = 40 C to +125 C; Ta b l e 1 .. 3 Added Continuous Drain Input, TA = 125 C of 600 5 6/13 Rev.

7 E to Rev. F Changes to Table 1 .. 3 Updated Outline Dimensions .. 16 7/12 Rev. D to Rev. E Changes to Table 1 .. 3 Changes to Figure 3 .. 4 Changes to Timing Section and Ta b l e 6 .. 14 Changes to Ordering Guide .. 16 6/12 Rev. C to Rev. D Changes to Table Headings in Table 6 .. 14 Added Text to Diode OR ing Applications Section .. 15 Updated Outline Dimensions .. 16 4/12 Rev. B to Rev. C Changes to VOUT Time Parameters .. 3 11/11 Rev. A to Rev. B Changes to WLCSP Turn-On Delay Time Parameter .. 3 Changes to Ordering Guide.

8 16 10/11 Rev. 0 to Rev. A Change to Features Section .. 1 Changes to Table 1, Specifications Section .. 3 Change to Ground current Section .. 12 Changes to Enable Feature Section .. 13 Updated Outline Dimensions .. 16 10/11 Revision 0: Initial Version data sheet ADP198 Rev. G | Page 3 of 16 SPECIFICATIONS VIN = V, EN = VIN, IOUT = 200 mA, TA = 25 C, unless otherwise noted. TJ = 40 C to +85 C for minimum/maximum specifications, unless otherwise noted. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT VOLTAGE RANGE VIN TJ = 40 C to +125 C V EN INPUT Threshold High VIH VIN 5 V V 5 V < VIN V Low VIL V VIN V V V VIN V, TJ = 40 C to +125 C V Pull-Down current IEN 500 nA REVERSE blocking VOUT current VEN = 0, VIN = 0, VOUT = V 7 13 A Hysteresis |VIN VOUT| 75 mV current Quiescent current IQ IOUT = 0 mA.

9 Includes EN pull-down current VIN = VOUT = V A VIN = VOUT = V 20 A Off State current IOFF EN = GND 2 A EN = GND, VOUT = 0 V 2 A VIN to VOUT RESISTANCE RDSON WLCSP VIN = 5 V, ILOAD = 200 mA, VEN = V 40 m VIN = V, ILOAD = 200 mA, VEN = V 50 80 m VIN = V, ILOAD = 200 mA, VEN = V, TJ = 40 C to +125 C 50 90 m VIN = V, ILOAD = 200 mA, VEN = V 60 m VIN = V, ILOAD = 200 mA, VEN = V 130 m VIN = V, ILOAD = 200 mA, VEN = V 180 m LFCSP VIN = 5 V, ILOAD = 200 mA, VEN = V 75 120 m VIN = 5 V, ILOAD = 200 mA, VEN = V, TJ = 40 C to +125 C 75 130 m VIN = V, ILOAD = 200 mA, VEN = V 90 m VIN = V, ILOAD = 200 mA, VEN = V 100 m VIN = V, ILOAD = 200 mA, VEN = V 120 m VIN = V, ILOAD = 200 mA, VEN = V 200 m VOUT TIME WLCSP Turn-On Delay Time tO N _ D LY VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F, ADP198 ACBZ-R7 10 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F.

10 ADP198 ACBZ-11-R7 450 s LFCSP Turn-On Delay Time tO N _ D LY VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = L, SEL1 = L 10 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = H, SEL1 = L 100 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = L, SEL1 = H 200 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = H, SEL1 = H 450 s WLCSP Turn-On Rise Time tRISE VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F, ADP198 ACBZ-R7 12 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F, ADP198 ACBZ-11-R7 650 s LFCSP Turn-On Rise Time tRISE VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = L, SEL1 = L 12 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F; SEL0 = H, SEL1 = L 100 s VIN = V, ILOAD = 200 mA, VEN = V, CLOAD = 1 F.