Transcription of NTE2985 Logic Level MOSFET N Channel, …
1 GSDNTE2985 Logic Level MOSFETN channel , enhancement ModeHigh Speed SwitchTO220 Type PackageFeatures:DDynamic dv/dt RatingDLogic Level Gate DriveDRDS(on) Specified at VGS = 4V & 5VD+1755C Operating TemperatureDFast SwitchingDEase of ParallelingDSimple Drive RequirementsAbsolute Maximum Ratings:Drain Current, IDContinuous (VGS = 5V)TC = + = + (Note 1) Power Dissipation (TC = +255C), Above Source Voltage, VGS+ Pulsed Avalanche Energy (Note 2), Diode Recovery dv/dt (Note 3), Junction Temperature Range, TJ 555 to + Temperature Range, Tstg 555 to + Lead Temperature (During Soldering, from case, 10sec), TL+ Torque, 6 32 or M3 Screw10 lbfwin ( Nwm)..Thermal Resistance:Maximum Junction to Case, Case to Sink (Mounting surface flat, smooth, and greased), Junction to Ambient (Free Air Operation), RthJA62 1. Repetitive Rating: Pulse width limited by maximum junction 2. L = 2853H, VDD = 25V, RG = 25., Starting TJ = +1755C, IAS = 3. ISD 3 30A, di/dt 3 200A/3s, VDD 3 V(BR)DSS, TJ 3 + 10 13 Electrical Characteristics: (TC = +255C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitDrain Source Breakdown VoltageBVDSSVGS = 0V, ID = 2503A60 VBreakdown Voltage TemperatureCoefficient+V(BR)DSS/+TJRefer ence to +255C, ID = 1mA V/5 CStatic Drain Source ON ResistanceRDS(on)VGS = 5V, ID = 18A, Note 4 = 4V, ID = 15A, Note 4 Threshold VoltageVGS(th)VDS = VGS, ID = TransconductancegfsVDS.
2 25V, ID = 18A, Note 412 mhosDrain to Source Leakage CurrentIDSSVDS = 60V, VGS = 0 253 AVDS = 48V, VGS = 0V, , TC = +1505C 2503 AGate Source Leakage ForwardIGSSVGS = 10V 100nAGate Source Leakage ReverseIGSSVGS = 10V 100nATotal Gate ChargeQgVGS = 5V, ID = 30A, VDS = 48V 35nCGate Source ChargeQgs Drain ( Miller ) ChargeQgd 25nCTurn On Delay Timetd(on)VDD = 30V, ID = 30A, RG = ,RD = 14 nsRise Timetr 170 nsTurn Off Delay Timetd(off) 30 nsFall Timetf 56 nsInternal Drain InductanceLDBetween lead, 6mm ( ) frompackage and center of die contact nHInternal Source InductanceLS nHInput CapacitanceCissVGS = 0V, VDS = 25V, f = 1 MHz 1600 pFOutput CapacitanceCoss 660 pFReverse Transfer CapacitanceCrss 170 pFSource Drain Diode Ratings and CharacteristicsContinuous Source CurrentIS(Body Diode) 30 APulse Source CurrentISM(Body Diode) Note 1 110 ADiode Forward VoltageVSDTJ = +255C, IS = 30A, VGS = 0V, Note 4 Recovery TimetrrTJ = +255C, IF = 30A, di/dt = 100A/3s,Note 4 120180nsReverse Recovery ChargeQrr Turn On TimetonIntrinsic turn on time is neglegible(turn on is dominated by LS + LD)Note 1.
3 Repetitive Rating: Pulse width limited by maximum junction 4. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%..250 ( ) ( ) ( ) ( ).420 ( ) ( ) ( ) ( )Dia Max
