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NTE3041 Optoisolator NPN Transistor Output

NTE3041 OptoisolatorNPN Transistor OutputDescription:The NTE3041 is an Optoisolator in a 6 Lead DIP type package consisting of a gallium arsenide in-frared emitting diode optically coupled to a monolithic silicon phototransistor :DHigh Current Transfer Ratio: 100% Min @ Spec ConditionsDGuaranteed Switching SpeedsApplications:DGeneral Purpose Switching CircuitsDInterfacing and Coupling Systems of Different Potentials and ImpedancesDRegulation Feedback CircuitsDMonitor & Detection CircuitsDSolid State RelaysAbsolute Maximum Ratings: (TA = +255C unless otherwise specified)Input LEDR everse Voltage, Forward Current, Power Dissipation (With Negligible Power in Output Detector), Above TransistorCollector Emitter Voltage, Base Voltage, Base Voltage, Collector Current, Power Dissipation (With Negligible Power in Output Detector), Above DeviceIsolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), Device Power Dissipation, Above Ambient Temperature Range, TA 555 to + Temperature Range, Tstg 555 to + Temperature (During Soldering, 1/16 from case, 10sec), TL+ 1.

NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6−Lead DIP type package consisting of a gallium arsenide in-

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  Transistor, Output, Optoisolators, Nte3041 optoisolator npn transistor output, Nte3041

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Transcription of NTE3041 Optoisolator NPN Transistor Output

1 NTE3041 OptoisolatorNPN Transistor OutputDescription:The NTE3041 is an Optoisolator in a 6 Lead DIP type package consisting of a gallium arsenide in-frared emitting diode optically coupled to a monolithic silicon phototransistor :DHigh Current Transfer Ratio: 100% Min @ Spec ConditionsDGuaranteed Switching SpeedsApplications:DGeneral Purpose Switching CircuitsDInterfacing and Coupling Systems of Different Potentials and ImpedancesDRegulation Feedback CircuitsDMonitor & Detection CircuitsDSolid State RelaysAbsolute Maximum Ratings: (TA = +255C unless otherwise specified)Input LEDR everse Voltage, Forward Current, Power Dissipation (With Negligible Power in Output Detector), Above TransistorCollector Emitter Voltage, Base Voltage, Base Voltage, Collector Current, Power Dissipation (With Negligible Power in Output Detector), Above DeviceIsolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), Device Power Dissipation, Above Ambient Temperature Range, TA 555 to + Temperature Range, Tstg 555 to + Temperature (During Soldering, 1/16 from case, 10sec), TL+ 1.

2 Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1and Pin2 are common, and Pin4, Pin5, and Pin6 are 2 14 Electrical Characteristics: (TA = +255C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitInput LEDF orward VoltageVFIF = = 10mA, TA = = 10mA, TA = + Leakage CurrentIRVR = 6V 10 ACapacitanceCJV = 0, f = 1 MHz 18 pFOutput TransistorCollector Emitter Dark CurrentICEOVCE = 10V 150nAVCE = 30V, TA = +1005C 500 ACollector Base Dark CurrentICBOVCB = 10V = 10V, TA = +1005C 100 nACollector Emitter Breakdown VoltageV(BR)CEOIC = 1mA3045 VCollector Base Breakdown VoltageV(BR)CBOIC = 100 A70100 VEmitter Base Breakdown VoltageV(BR)EBOIE = 100 VDC Current GainhFEIC = 2mA, VCE = 5V 400 Collector Emitter CapacitanceCCEVCE = 5V, f = 1 MHz 7 pFCollector Base CapacitanceCCBVCB = 0, f = 1 MHz 19 pFEmitter Base CapacitanceCEBVEB = 0, f = 1 MHz 9 pFCoupledOutput Collector CurrentICIF = 10mA, VCE = 10V1030 mAIF = 10mA, VCE = 10V, TA = 555C4 mAIF = 10mA, VCE = 10V, TA = +1005C4 mACollector Emitter Saturation VoltageVCE(sat)IC = , IF = 10mA On TimetonIC = 2mA, VCC = 10V, RL = 1005 Off Timetoff Timetr sFall Timetf sIsolation VoltageVISOf = 60Hz, t = 1sec7500 VIsolation CurrentIISOVI O = 3550 Vpk 100 AIsolation ResistanceRISOV = 500V1011 5 Isolation CapacitanceCISOV = 0, f = 1 MHz Connection ( ) ( ) ( ) ( ) ( ) ( ).

3 300 ( ).070 ( ) Max12365 4 NOTE: Pin1 locator dot is for reference additional Pin1 location options, click here.


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