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Power MOSFET - Vishay Intertechnology

integral reverse p - n junction diode-- 18 A Pulsed Diode Forward Current a ISM-- 72 Body Diode Voltage VSD TJ = 25 °C, IS = 18 A, VGS = 0 V b-- 2.0V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b - 300 610 ns …

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