SLPS390A –JUNE 2013–REVISED MARCH 2015 …

1 Qg - Gate Charge (nC)VGS - Gate-to-Source Voltage (V)036912150246810D004ID = 25 AVDS = 30 VVGS - Gate-to-Source Voltage (V)RDS(on) - On-State Resistance (m:)0246810121416182004812162024283236D0 07TC = 25 C, ID = 25 ATC = 125 C, ID = 25 AGate (Pin 1)Drain (Pin 2)Source (Pin 3)ProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityCSD18537 NKCSSLPS390A JUNE2013 REVISEDMARCH2015 CSD18537 NKCS60 V N-ChannelNexFET PowerMOSFET1 FeaturesProductSummary1 UltraLow Qgand QgdTA= 25 CTYPICALVALUEUNIT Low ThermalResistanceVDSD rain-to-SourceVoltage60V AvalancheRatedQgGateChargeTotal(10 V) Pb FreeTerminalPlatingVGS= 6 V14m RoHSCompliantRDS(on)Drain-to-SourceOn-Re sistanceVGS= 10 V11m HalogenFreeVGS(th)ThresholdVoltage3V TO-220 PlasticPackageOrderingInformation(1)2 ApplicationsDevicePackageMediaQtyShip HighSideSynchronousBuckConverterCSD18537 NKCSTO-220 PlasticPackageTube50 Tube MotorControl(1) For all availablepackages,see the orderableaddendumatthe end of the DescriptionAbsoluteMaximumRatingsThis 11 m , 60 V TO-220 NexFET powerMOSFETis designedto minimizelossesin powerconversionTA= 25 20 VContinuousDrainCurrent(Packagelimited)5 0 ContinuousDrainCurrent(Siliconlimited),5 6 IDTC= 25 CAContinuousDrainCurrent(Siliconlimited) ,39TC= 100 CIDMP ulsedDrainCurrent(1)127 APDP owerDissipation94 WTJ,OperatingJunctionand 55 to 175 CTstgStorageTemperatureRangeAvalancheEne rgy,singlepulseEAS55mJID= 33 A, L = mH, RG= 25 (1) Max R JC= C/W,pulseduration 100 s, duty cycle 1%RDS(on)vs VGSRDS(on)vs VGS1An IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JUNE2013 Deviceand MechanicalPackaging,and RevisionHistoryNOTE.

2 Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (June2013)to RevisionAPage Addedpart numberto title ..1 Increasedthe TC= 25 continuousdraincurrentto 56 Increasedthe TC= 125 continuousdraincurrentto 39 A ..1 Increasedthe pulseddraincurrentto 127 A ..1 Increasedthe max powerdissipationto 94 W ..1 Increasedthe max operatingjunctionand storagetemperatureto 175 ..1 Updatedthe UpdatedFigure1 froma normalizedR JAto an R UpdatedFigure6 to extendto 175 C ..5 UpdatedFigure8 to extendto 175 C ..5 Updatedthe SOAin Figure10 ..6 UpdatedFigure12 to extendto 175 C ..62 SubmitDocumentationFeedbackCopyright 2013 2015 , JUNE2013 REVISEDMARCH20155 (TA= 25 C unlessotherwisestated)PARAMETERTESTCONDI TIONSMINTYPMAXUNITSTATICCHARACTERISTICSB VDSSD rain-to-SourceVoltageVGS= 0 V, ID= 250 A60 VIDSSD rain-to-SourceLeakageCurrentVGS= 0 V, VDS= 48 V1 AIGSSGate-to-SourceLeakageCurrentVDS= 0 V, VGS= 20 V100nAVGS(th)Gate-to-SourceThresholdVolt ageVDS= VGS, ID= 250 6 V, ID= 25 A1418m RDS(on)Drain-to-SourceOn-ResistanceVGS= 10 V, ID= 25 A1114m g sTransconductanceVDS= 30 V, ID= 25 A100 SDYNAMICCHARACTERISTICSCissInputCapacita nce11401480pFCossOutputCapacitanceVGS= 0 V, VDS= 30 V, = 1 QgGateChargeTotal(10 V) 30 V, ID= 25 (th)GateChargeat 30 V, VGS= 0 V25nCtd(on)TurnOn 30 V, VGS= 10V,IDS= 25 A, RG= 0 td(off)TurnOff Fall 25 A, VGS= 0 30 V, IF= 25 A,di/dt = 300 A/ (TA= 25 C unlessotherwisestated)

3 THERMALMETRICMINTYPMAXUNITR C/WR JAJunction-to-AmbientThermalResistance62 Copyright 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks:CSD18537 NKCSVDS - Drain-to-Source Voltage (V)IDS - Drain-to-Source Current (A) = 6 VVGS = 8 VVGS = 10 VVGS - Gate-to-Source Voltage (V)IDS - Drain-to-Source Current (A)0123456780102030405060D003TC = 125 CTC = 25 CTC = -55 CCSD18537 NKCSSLPS390A JUNE2013 (TA= 25 C unlessotherwisestated)Figure1. TransientThermalImpedanceVDS= 5 VFigure2. SaturationCharacteristicsFigure3. TransferCharacteristics4 SubmitDocumentationFeedbackCopyright 2013 2015 ,TexasInstrumentsIncorporatedProduct FolderLinks:CSD18537 NKCSVSD - Source-to-Drain Voltage (V)ISD - Source-to-Drain Current (A) = 25 CTC = 125 CTC - Case Temperature ( C)Normalized On-State Resistance-75-50-250255075100125150175 = VVGS = 10 VTC - Case Temperature ( C)VGS(th) - Threshold Voltage (V)-75-50-250255075100125150175 - Gate-to-Source Voltage (V)RDS(on) - On-State Resistance (m:)0246810121416182004812162024283236D0 07TC = 25 C, ID = 25 ATC = 125 C, ID = 25 AQg - Gate Charge (nC)VGS - Gate-to-Source Voltage (V)036912150246810D004 VDS - Drain-to-Source Voltage (V)C - Capacitance (pF) = Cgd + CgsCoss = Cds + CgdCrss = JUNE2013 REVISEDMARCH2015 TypicalMOSFETC haracteristics(continued)(TA= 25 C unlessotherwisestated)ID= 25 AVDS= 30 VFigure5.

4 CapacitanceFigure4. GateChargeID= 250 AFigure7. On-StateResistancevs Gate-to-SourceVoltageFigure6. ThresholdVoltagevs TemperatureID= 25 AFigure8. NormalizedOn-StateResistancevs TemperatureFigure9. TypicalDiodeForwardVoltageCopyright 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks:CSD18537 NKCSTC - Case Temperature ( C)IDS - Drain-to-Source Current (A)-50-250255075100125150175 200010203040506070D012 VDS - Drain-to-Source Voltage (V)IDS - Drain-to-Source Current (A) ms1 ms100 s10 sTAV - Time in Avalanche (ms)IAV - Peak Avalanche Current (A) = 25G CTC = 125G CCSD18537 NKCSSLPS390A JUNE2013 (continued)(TA= 25 C unlessotherwisestated)SinglePulse,Max R JC= C/WFigure10. MaximumSafeOperatingArea(SOA)Figure11. SinglePulseUnclampedInductiveSwitchingFi gure12. MaximumDrainCurrentvs Temperature6 SubmitDocumentationFeedbackCopyright 2013 2015 , JUNE2013 REVISEDMARCH20156 Deviceand a trademarkof othertrademarksare the propertyof leadsshouldbe shortedtogetheror the deviceplacedin conductivefoamduringstorageor handlingto preventelectrostaticdamageto the TI glossarylists and explainsterms,acronyms,and 2013 2015 ,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks:CSD18537 NKCSCSD18537 NKCSSLPS390A JUNE2013 MechanicalPackaging,and OrderableInformationThe followingpagesincludemechanical,packagin g,and the mostcurrentdataavailablefor the subjectto changewithoutnoticeand revisionofthis browser-basedversionsof this datasheet,referto the :1.

5 All lineardimensionsare in inches2. This drawingis subjectto changewithoutnotice3. LeadDimensionsare not controlledwithin"C" area4. All lead dimensionsapplybeforesolderdip5. The centerlead is in electricalcontactwith the mountingtab6. The chamferat "F" is optional7. Thermalpad contourat "G" optionalwith thesedimensions8. "H" FallswithinJEDECTO-220variationAB, exceptminimumlead thickness,minimumexposedpad length,and ConfigurationPositionDesignationPin 1 GatePin 2 / TabDrainPin 3 Source8 SubmitDocumentationFeedbackCopyright 2013 2015 ,TexasInstrumentsIncorporatedProduct FolderLinks:CSD18537 NKCSPACKAGE OPTION 1 PACKAGING INFORMATIONO rderable DeviceStatus(1)Package TypePackageDrawingPinsPackageQtyEco Plan(2)Lead/Ball Finish(6)MSL Peak Temp(3)Op Temp ( C)Device Marking(4/5)SamplesCSD18537 NKCSACTIVETO-220 KCS350Pb-Free(RoHS)CU SNN / A for Pkg Type-55 to 15018537N (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new : TI has announced that the device will be discontinued, and a lifetime-buy period is in : Not recommended for new designs.

6 Device is in production to support existing customers, but TI does not recommend using this part in a new : Device has been announced but is not in production. Samples may or may not be : TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check for the latest availabilityinformation and additional product content : The Pb-Free/Green conversion plan has not been (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe.

7 The component is otherwise considered Pb-Free (RoHS compatible) as defined (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed by weightin homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line.

8 Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual OPTION 2 IMPORTANTNOTICET exasInstrumentsIncorporatedand its subsidiaries(TI) reservethe rightto makecorrections,enhancements,improvement sand otherchangesto its semiconductorproductsand servicesper JESD46,latestissue,and to discontinueany productor serviceper JESD48, latestrelevantinformationbeforeplacingor dersand shouldverifythat suchinformationis semiconductorproducts(alsoreferredto hereinas components )

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