STGIPQ5C60T-HL, STGIPQ5C60T-HZ Applications

1 STGIPQ5C60T-HL, STGIPQ5C60T-HZ . SLLIMM nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs Datasheet - production data Applications 3-phase inverters for motor drives Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps N2 DIP-26L type L Description This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high performance AC motor drive in a simple, rugged design. It is composed of six N2 DIP-26L type Z. improved IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI). Features characteristics with optimized switching speed. IPM 5 A, 600 V, 3-phase IGBT inverter The package is designed to allow a better and bridge including 3 control ICs for gate driving more easily screwed-on heatsink and is and freewheeling diodes optimized for thermal performance and V, 5 V, 15 V TTL/CMOS input compactness in built-in motor Applications or comparators with hysteresis and pull- other low power Applications where assembly down/pull-up resistors space is limited.

2 This IPM includes a completely Internal bootstrap diode uncommitted operational amplifier and a Optimized for low electromagnetic comparator that can be used to design a fast and interference efficient protection circuit. SLLIMM is a trademark of STMicroelectronics. Undervoltage lockout Short-circuit rugged TFS IGBTs Smart shutdown function Interlocking function Op-amp for advanced current sensing Comparator for fault protection against overcurrent NTC (UL 1434 CA 2 and 4). Isolation ratings of 1500 Vrms/min. Up to 2 kV ESD protection (HBM C = 100 pF, R = k ). UL recognition: UL 1557 file E81734. Table 1: Device summary Order code Marking Package Packing STGIPQ5C60T-HL GIPQ5C60T-HL N2 DIP-26L type L. Tube STGIPQ5C60T-HZ GIPQ5C60T-HZ N2 DIP-26L type Z. March 2017 DocID026844 Rev 7 1/26. This is information on a product in full production. Contents STGIPQ5C60T-HL, STGIPQ5C60T-HZ . Contents 1 Internal schematic diagram and pin configuration.

3 3. 2 Electrical ratings .. 5. Absolute maximum ratings .. 5. Thermal data .. 5. 3 Electrical characteristics .. 6. Inverter part .. 6. Control part .. 8. NTC thermistor .. 11. Waveform 13. 4 Smart shutdown function .. 14. 5 Application circuit example .. 16. Guidelines .. 17. 6 Electrical characteristics (curves).. 19. 7 Package information .. 20. N2 DIP-26L type L package information .. 20. N2 DIP-26L type Z package information .. 22. N2 DIP-26L packing information .. 24. 8 Revision history .. 25. 2/26 DocID026844 Rev 7. STGIPQ5C60T-HL, STGIPQ5C60T-HZ Internal schematic diagram and pin configuration 1 Internal schematic diagram and pin configuration Figure 1: Internal schematic diagram GND (1) N W (26). T/ SD / OD (2) NTC. GND W, O UT W (25). Vcc W (3) HVG. OUT Vboo t W (24). VCC. HIN W (4). HIN LVG. SD/OD. LINW (5) LIN Vboot OP+ (6). N V (23). OPOUT (7) GND OP+. OPOUT. OP- HVG V, O UT V (22). OP- (8). OUT. VCC. Vcc V (9) HIN LVG. SD/OD. LIN Vboot HIN V (10).

4 Vboo t V (21). LIN V (11). GND N U (20). CIN (12) CIN. HVG. Vcc U (13). OUT U, OUT U (19). VCC. HIN LVG. HIN U (14). SD/OD. LIN Vboot P (18). T / SD / OD (15). LIN U (16) Vboo t U (17). DocID026844 Rev 7 3/26. Internal schematic diagram and pin configuration STGIPQ5C60T-HL, STGIPQ5C60T-HZ . Table 2: Pin description Pin Symbol Description 1 GND Ground NTC thermistor terminal / shutdown logic input (active low) / open-drain 2 T/ SD / OD. (comparator output). 3 VCC W Low voltage power supply W phase 4 HIN W High-side logic input for W phase 5 LIN W Low-side logic input for W phase 6 OP+ Op-amp non-inverting input 7 OPOUT Op-amp output 8 OP- Op-amp inverting input 9 VCC V Low voltage power supply V phase 10 HIN V High-side logic input for V phase 11 LIN V Low-side logic input for V phase 12 CIN Comparator input 13 VCC U Low voltage power supply for V phase 14 HIN U High-side logic input for V phase NTC thermistor terminal / shutdown logic input (active low) / open-drain 15 T/ SD / OD.

5 (comparator output). 16 LIN U Low-side logic input for U phase 17 VBOOT U Bootstrap voltage for U phase 18 P Positive DC input 19 U, OUTU U phase output 20 NU Negative DC input for U phase 21 VBOOT V Bootstrap voltage for V phase 22 V, OUTV V phase output 23 NV Negative DC input for V phase 24 VBOOT W Bootstrap voltage for W phase 25 W, OUTW W phase output 26 NW Negative DC input for W phase 4/26 DocID026844 Rev 7. STGIPQ5C60T-HL, STGIPQ5C60T-HZ Electrical ratings 2 Electrical ratings Absolute maximum ratings Table 3: Inverter part Symbol Parameter Value Unit VCES Collector-emitter voltage each IGBT (VIN(1)= 0) 600 V. IC Continuous collector current each IGBT 5 A. ICP(2) Peak collector current each IGBT (less than 1 ms) 10 A. PTOT Total dissipation at TC=25 C each IGBT W. Notes: (1)Applied among HINx, LINx and GND for x = U, V, W. (2)Pulse width limited by max. junction temperature. Table 4: Control part Symbol Parameter Min. Max. Unit VCC Low voltage power supply - 21 V.

6 Vboot Bootstrap voltage - 620 V. Output voltage applied among OUTU, OUTV, OUTW - Vboot +. VOUT Vboot - 21 V. GND VCIN Comparator input voltage - VCC + V. Vop+ Op-amp non-inverting input - VCC + V. Vop- Op-amp inverting input - VCC + V. Logic input voltage applied among HINx, LINx and VIN - 15 V. GND. / . / Open-drain voltage - 15 V. VOUT/dT Allowed output slew rate 50 V/ns Table 5: Total system Symbol Parameter Value Unit Isolation withstand voltage applied between each pin VISO 1500 V. and heatsink plate (AC voltage, t = 60 s). Tj Power chip operating junction temperature -40 to 150 C. TC Module case operation temperature -40 to 125 C. Thermal data Table 6: Thermal data Symbol Parameter Value Unit Thermal resistance junction-case single IGBT Rth(j-c) C/W. Thermal resistance junction-case single diode 15. DocID026844 Rev 7 5/26. Electrical characteristics STGIPQ5C60T-HL, STGIPQ5C60T-HZ . 3 Electrical characteristics TJ = 25 C unless otherwise specified Inverter part Table 7: Static Symbol Parameter Test conditions Min.

7 Typ. Max. Unit Collector cut-off current VCE = 550 V, ICES - 250 A. (VIN = 0 logic state ) VCC = VBoot = 15 V. Collector-emitter saturation VCC = Vboot = 15 V, VCE(sat) - V. voltage VIN(1) = 0 - 5 V, IC = 5 A. VIN = 0 logic state , VF Diode forward voltage - V. IC = 5 A. Notes: (1)Applied among HINx, LINx and GND for x = U, V, W. Table 8: Inductive load switching time and energy Symbol Parameter Test conditions Min. Typ. Max. Unit ton(1) Turn-on time - 280 - tc(on)(1) Crossover time (on) VDD = 300 V, - 130 - toff(1) Turn-off time VCC = Vboot = 15 V, - 950 - ns VIN(2) = 0 - 5 V, tc(off)(1) Crossover time (off) - 115 - IC = 5 A. trr Reverse recovery time - 94 - (see Figure 3: "Switching Eon Turn-on switching energy time definition") - 110 - J. Eoff Turn-off switching energy - 93 - Notes: (1)t ON and tOFF include the propagation delay time of the internal drive. t C(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving conditions.

8 (2)Applied among HINx, LINx and GND for x = U, V, W. 6/26 DocID026844 Rev 7. STGIPQ5C60T-HL, STGIPQ5C60T-HZ Electrical characteristics Figure 2: Switching time test circuit Figure 3: Switching time definition Figure 3: "Switching time definition" refers to HIN, LIN inputs (active high). DocID026844 Rev 7 7/26. Electrical characteristics STGIPQ5C60T-HL, STGIPQ5C60T-HZ . Control part Table 9: Low voltage power supply Symbol Parameter Test conditions Min. Typ. Max. Unit VCC_hys VCC UV hysteresis V. VCC_thON VCC UV turn-ON threshold 12 V. VCC_thOFF VCC UV turn-OFF threshold 10 11 V. VCC = 10 V, Undervoltage quiescent supply Iqccu T/ SD /OD = 5 V 150 A. current LIN =HIN =CIN = 0 V. VCC = 10 V, Iqcc Quiescent current T/ SD /OD = 5 V; 1 mA. LIN = HIN =CIN = 0 V. Internal comparator (CIN). Vref V. reference voltage Table 10: Bootstrapped voltage Symbol Parameter Test conditions Min. Typ. Max. Unit VBS_hys VBS UV hysteresis V. VBS_thON VBS UV turn-ON threshold V.

9 VBS_thOFF VBS UV turn-OFF threshold 10 V. VBS < 9 V, Undervoltage VBS quiescent T/ SD /OD = 5 V;. IQBSU 70 110 A. current LIN = 0 V and HIN = 5 V;. CIN = 0 V. VBS = 15 V, T/ SD /OD = 5 V;. IQBS VBS quiescent current 150 210 A. LIN = 0 V and HIN = 5 V;. CIN = 0. RDS(on) Bootstrap driver on-resistance LVG ON 120 . 8/26 DocID026844 Rev 7. STGIPQ5C60T-HL, STGIPQ5C60T-HZ Electrical characteristics Table 11: Logic inputs Symbol Parameter Test conditions Min. Typ. Max. Unit Vil Low logic level voltage V. Vih High logic level voltage V. HIN logic 1 input bias IHINh HIN = 15 V 20 40 100 A. current HIN logic 0 input bias IHINl HIN = 0 V 1 A. current ILINl LIN logic 0 input bias current LIN = 0 V 1 A. ILINh LIN logic 1 input bias current LIN = 15 V 20 40 100 A. SD logic 0 input bias ISDh SD = 15 V 220 295 370 A. current SD logic 1 input bias ISDl SD = 0 V 3 A. current See Figure 8: "Dead time Dt Dead time and interlocking waveform 180 ns definitions".

10 Table 12: Op-amp characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Vio Input offset voltage Vic = 0 V, Vo = V 6 mV. Iio Input offset current 4 40 nA. Vic = 0 V, Vo = V. Iib Input bias current (1) 100 200 nA. VOL Low level output voltage RL = 10 k to VCC 75 150 mV. VOH High level output voltage RL= 10 k to GND 14 V. Source, Vid = + 1 V;. 16 30 mA. Io Output short-circuit current Vo = 0 V. Sink, Vid = -1 V; Vo = VCC 50 80 mA. Vi = 1 - 4 V; CL = 100 pF;. SR Slew rate V/ s unity gain GBWP Gain bandwidth product Vo = V 8 12 MHz Avd Large signal voltage gain RL = 2 k 70 85 dB. SVR Supply voltage rejection ratio vs VCC 60 75 dB. CMRR Common mode rejection ratio 55 70 dB. Notes: (1)The direction of input current is out of the IC. DocID026844 Rev 7 9/26. Electrical characteristics STGIPQ5C60T-HL, STGIPQ5C60T-HZ . Table 13: Sense comparator characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Iib Input bias current VCIN = 1 V - 3 A.