Transcription of UNISONIC TECHNOLOGIES CO., LTD
1 UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR 1 of 5 Copyright 2015 UNISONIC TECHNOLOGIES Co., Ltd MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2SD882L-x-TM3-T 2SD882G-x-TM3-T TO-251 B C E Tube 2SD882L-x-TN3-R 2SD882G-x-TN3-R TO-252 B C E Tape Reel2SD882L-x-T60-K 2SD882G-x-T60-K TO-126 E C B
2 Bulk 2SD882L-x-T6C-K 2SD882G-x-T6C-K TO-126C E C B Bulk 2SD882L-x-T6S-K 2SD882G-x-T6S-K TO-126S E C B Bulk 2SD882L-x-T9N-B 2SD882G-x-T9N-B TO-92NL E C B Tape Box 2SD882L-x-T9N-K 2SD882G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: E: Emitter C: Collector B: Base 2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO.
3 , LTD 2 of 5 MARKING PACKAGE MARKING TO-251 TO-252 TO-126 TO-126C TO-126S TO-92NL UTC2SD882 Data CodeL: Lead FreeG: Halogen Free 2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 5 ABSOLUTE MAXIMUM RATING (TA=25 C, unless otherwise specified ) PARAMETER SYMBOLRATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V DC IC 3 A Collector Current Pulse ICP 7 A Base Current IB A
4 TO-251/TO-252 TO-126/TO-126 CTO-126S 1 W Collector Dissipation (TA=25 C) TO-92NL PC W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25 C, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITC ollector-Base Breakdown Voltage BVCBO IC=100 A, IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 30 V Emitter-Base Breakdown Voltage BVEBO IE=100 A, IC=0 7 V Collector Cut-off Current ICBO VCB=30V.
5 IE=0 1000 nA Emitter Cut-off Current IEBO VEB=3V, IC=0 1000 nA hFE1 VCE=2V, IC=20mA 30 200 DC Current Gain (Note) hFE2 VCE=2V, IC=1A 100 150 400 Collector-Emitter Saturation Voltage VCE(SAT)IC=2A, IB= V Base-Emitter Saturation Voltage VBE(SAT)IC=2A, IB= V Current Gain Bandwidth Product fT VCE=5V, IC= 80 MHzOutput Capacitance Cob VCB=10V, IE=0, f=1 MHz 45 pF Note: Pulse test.
6 PW<300 s, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK Q P E RANGE 100-200 160-320 200-400 2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 5 TYPICAL CHARACTERISTICS Collector Current, Ic (A)Derating, IC(%)S/b limitedDissipation limited Current Gain-Bandwidth Product Current Gain-Bandwidth Product, FT(MHz)Collector-Emitter VoltageCollector Current, IC(A)Safe Operating AreaIC(max), Current, Ic (A)10310210110010-210-110010110110010-11 0-2100101102IC(max), DCVCE=5 VIB=8mA DC Current Gain, hFESaturation Voltage (mV) 2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO.
7 , LTD 5 of 5 TYPICAL CHARACTERISTICS(Cont.) Collector Output CapacitanceCollector-Base Voltage (V)Output Capacitance (pF)100103IE=0f=1 MHz10210110010-110-210-3 UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.
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