Chapter 9 Asynchronous Sequential Logic

Chapter 2 Basic Structure of Computers - NCU

Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Chapter 2 Basic Structure of Computers

  Basics, Computer, Structure, 2 basic structure of computers

Chapter 1 Introduction to CMOS Circuit Design

Chapter 1 Introduction to CMOS Circuit Design Jin-Fu Li Advanced Reliable Systems (ARES) Lab. Department of Electrical Engineering National Central University

  Design, Circuit, Cmos, Cmos circuit design

Training Course of Design Compiler [相容模式]

Training Course of Design Compiler REF: • CIC Training Manual – Logic Synthesis with Design Compiler, July, 2006 • TSMC 0 18um Process 1 8-Volt SAGE-XTM Stand Cell Library Databook September 2003

  Training, Manual, Design, Course, Compiler, Training course of design compiler

Chapter 4 Low-Power VLSI DesignPower VLSI Design

Chapter 4 Low-Power VLSI DesignPower VLSI Design Jin-Fu Li Advanced Reliable Syy( )stems (ARES) Lab. Department of Electrical Engineering National Central UniversityNational Central University

  Design, Power, Vlsi, Low power vlsi designpower vlsi design, Designpower

hspice tutorial.ppt [相容模式] - ee.ncu.edu.tw

Contents Introduction Simulation Input and Controls Waveform Instructions Simulation Output ARES Lab-2010 Hspice Tutorial 2

Chapter 6 VLSI Testing - NCU

Advanced Reliable Systems (ARE S) Lab. Jin-Fu Li, EE, NCU 8 Trends of Testing Two key factors are changing the way of VLSI ICs testing The manufacturing test cost has been not scaling

  Testing, Manufacturing, Vlsi, Vlsi testing

Chapter 4 Electrical Characteristics of CMOS

For on-chip metal wires The inductance produces Ldi/dt noise especially for ground bouncing noise. Note that when CMOS circuit are clocked, the current flow changes greatly Inductor) 4 ln(2 d h L ) 4 8 ln(2 h w w h L dt di V L d h h w

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Chapter 2 MOS Transistor Theory - NCU

MOS transistors conduct electrical current by using ... ds than expected at high V ds Mobility degradation At high vertical field strengths (V gs/t ox), ... the electron speed will be high enough to break the electron-hole pair. Moreover, the electrons …

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My Hspice 教學 - NCU

Mn1 x in 0 0 nch L=0.18u W=0.22u M=1 Mp2 out ... .ENDSNodes are assigned by using BULK=node in MOSFET or BJT models • Param is used only in sbucircuit and it can be overridden by subckt call or values in .PARAM statement

  Mosfets