MOS Capacitor - Chenming Hu
MOSFETs (MOS Field-Effect Transistors). he acronym MOS stands for metal–oxide–semiconductor. An MOS capacitor (Fig. 5–1) is made of a semiconductor b ody or substrate, an insulator film, such as SiO 2, and a metal electrode called a gate. The oxide film can be as thin as 1.5 nm. One nanometer is equal to 10 Å, or the size of a few oxide ...
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MOS Transistor - Chenming Hu
www.chu.berkeley.eduModern MOSFET technology has advanced continually since its beginning in the 1950s. Figure 6–5 is a transmission electron microscope view of a part of a MOSFET. It shows the poly-Si gate and the single-crystalline Si body with visible individual Si atoms and a 1.2 nm amorphous SiO 2 film between them. 1.2 nm is the size of four SiO 2 molecules.
Device Fabrication Technology1 - Chenming Hu
www.chu.berkeley.edustarting material. A large wafer fab can process 40,000 silicon wafers into circuits each month. The simple example of the device fabrication process shown in Fig. 3–1 includes (a) formation of an SiO 2 layer, (b) its selective removal, (c) introduction of dopant atoms into the wafer surface, and (d) dopant diffusion into silicon. VLSI! ULSI!
Bipolar Transistor
www.chu.berkeley.eduIt was the first mass produced transistor, ahead of the MOS field-effect transistor (MOSFET) by a decade. After the introduction of metal-oxide-semiconductor (MOS) ICs around 1968, the high-density and low-power advantages of the MOS technology steadily eroded the BJT’s early dominance. BJTs are still pref erred in some high-frequency and analog
MOSFETs in ICs—Scaling, Leakage, and Other Topics
www.chu.berkeley.eduThe electron and hole mobility can be raised (or lowered) by carefully engineered mechanical strains. The strain changes the lattice constant of the silicon crystal and therefore the E–k relationship through the Schrodinger’s wave equation. The E–k relationship, in turn, determines the effective mass and the mobility.
Electrons and Holes in Semiconductors
www.chu.berkeley.eduevery silicon atom has four other silicon atoms as its nearest neighbor atoms. This fact is illustrated in Fig. 1–2 with the darkened cluster of a center atom having four neighboring atoms. This cluster is called the primitive cell. Silicon is a group IV element in the periodic table and has four valence electrons. These four electrons
PN and Metal–Semiconductor Junctions
www.chu.berkeley.edu4.1 Building Blocks of the PN Junction Theory 93 (4.1.2) The built-in potential is determined by N a and N d through Eq. (4.1.2). The larger the N a or N d is, the larger the φbi is.Typically, φbi is about 0.9 V for a silicon PN junction. Since a lower E c means a higher voltage (see Section 2.4), the N side is at a higher voltage or electrical potential than the P side.
Motion and Recombination of Electrons and Holes
www.chu.berkeley.educollisions is typically 10–13s or 0.1 ps (picosecond), and the distance between collisions is a few tens of nanometers or a few hundred angstroms. The net thermal velocity (averaged over time or over a large number of carriers at any given time) is zero. Thus, thermal motion does not create a steady electric current, but it does introduce a
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