TIP3055 - Complementary Silicon Power Transistors
Power Transistors Designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit
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