Transcription of QRE1113, QRE1113GR, QRE1114GR Miniature Reflective …
1 Semiconductor Components Industries, LLC, 2002 February, 2020 Rev. 71 Publication Order Number:QRE1113/DQRE1113, QRE1113GR, QRE1114 GRMiniature Reflective Object SensorFeatures Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing Two Leadform Options: Through Hole (QRE1113) SMT Gull Wing (QRE1113GR & QRE1114GR ) Two Packaging Options: Tube (QRE1113) Tape and Reel (QRE1113GR & QRE1114GR )MAXIMUM RATINGS (TA = 25 C unless otherwise noted)SymbolParameterValueUnitTOPRO perating Temperature 40 to +85 CTSTGS torage Temperature 40 to +90 CTSOL ISoldering Temperature (Iron)(Notes 2, 3, 4)240 for 5 s CTSOL FSoldering Temperature (Flow)(Notes 3, 4)260 for 10 s CEMITTERIFC ontinuous Forward Current50mAVRR everse Voltage5 VIFPPeak Forward Current (Note 5)1 APDP ower Dissipation (Note 1)75mWSENSORVCEOC ollector-Emitter Voltage30 VVECOE mitter-Collector Voltage5 VICC ollector Current20mAPDP ower Dissipation (Note 1)50mWStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be Derate power dissipation linearly mW/ C above 25 RMA flux is Methanol or isopropyl alcohols are recommended as cleaning Soldering iron 1/16 ( mm) from Pulse conditions: tp = 100ms; T = 10 document, and the information contained herein, is CONFIDENTIAL ANDPROPRIETARY and the property of Semiconductor Components Industries,LLC., dba ON Semiconductor. It shall not be used, published, disclosed ordisseminated outside of the Company, in whole or in part, without the writtenpermission of ON Semiconductor. Reverse engineering of any or all of theinformation contained herein is strictly 2020, SCILLC. All Rights RECTANGULAR SURFACE MOUNTCASE 100 CYREFLECTIVE RECTANGULAR THROUGH HOLECASE 100AQ1234 Pin 1: AnodePin 2: CathodePin 3: CollectorPin 4.
3 EmitterDevicePackageShipping ORDERING INFORMATIONQRE1113 ReflectiveRectangular(Through Hole)1600 / TubeQRE1113GR &QRE1114 GRReflectiveRectangular(Surface Mount)1000 / Tape & Reel For information on tape and reel specifications, in-cluding part orientation and tape sizes, please referto our Tape and Reel Packaging SpecificationsBrochure, BRD8011 , QRE1113GR, CHARACTERISTICS (TA = 25 C unless otherwise noted) SymbolParameterConditionsMinTypMaxUnitIN PUT DIODEVFF orward VoltageIF = 20 Leakage CurrentVR = 5 V10mAlPEPeak Emission WavelengthIF = 20 mA940nmOUTPUT TRANSISTORlDCollector-Emitter DarkCurrentIF = 0 mA, VCE = 20 V100nACOUPLEDlC(ON)On-State Collector CurrentIF = 20 mA, VCE = 5 V (Note 6)QRE1113 & Collector CurrentIF = 20 mA, VCE = 5 V (Note 7)1mAVCE(SAT)Saturation VoltageIF = 20 mA, IC = 50 mA (Note 6) TimeVCC = 5 V, lC(ON) = 100 mA, RL = 1 kW20mstfFall Time20msProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
4 Productperformance may not be indicated by the Electrical Characteristics if operated under different Measured using an aluminum alloy mirror at d = 1 No Reflective surface at close PROFILEF igure 1. Reflow ProfileTime (seconds)1 C to 5 C/sec1 C to 5 C/sec260 C max. for 10 sec. C120 sec. sec. 220 CPre heating180 C to 200 C220 CTemperature (5C)QRE1113, QRE1113GR, PERFORMANCE CURVESF igure 2. Normalized Collector Current between Device and ReflectorFigure 3. Collector Current vs. Forward CurrentFigure 4. Normalized Collector Current to Emitter VoltageFigure 5. Collector Emitter Dark Current(Normalized) vs. Ambient Temperatured DISTANCE (mm) = 10 mAVCE= 5 VTA = 25 CMirrorSensing Object:White Paper (90% Reflective )0d12 3 45IF FORWARD CURRENT (mA)VCE COLLECTOR EMITTER VOLTAGE (V) = 25mAIF=20mAIF=10mAIF=15mAIF=5mAd = 1 mm, 90% reflectionTA = 25 CTA AMBIENT TEMPERATURE ( C)254055708510 210 1100101102 Normalized to:VCE= 10 VTA = 25 CVCE= 10 VVCE= 5 VIC(ON) NORMALIZED COLLECTOR CURRENTIC(ON) COLLECTOR CURRENT (mA)ICEO NORMALIZED DARK CURRENTIC(ON) NORMALIZED COLLECTOR & QRE1113 GRQRE1114 GRQRE1113, QRE1113GR, PERFORMANCE CURVES (Continued)Figure 6.
5 Forward Current vs. Forward VoltageFigure 7. Rise and Fall Time vs. Load ResistanceFigure 8. Forward Voltage vs. AmbientTemperatureFigure 9. Radiation DiagramVF FORWARD VOLTAGE (V)IF FORWARD CURRENT (mA) = 25 CRL LOAD RESISTANCE (kW) = 10 Vtpw= 100 usT=1msTA = 25 CIC = mAIC = 1 mAtftftrtrRISE AND FALL TIME (ms)VF FORWARD VOLTAGE (V) = 50 mAIF = 10 mAIF = 20 mATA AMBIENT TEMPERATURE ( C) 40 20020406080 ANGULAR RADIANT INTENSITYQRE1113, QRE1113GR, DIMENSIONS FOR GR OPTIONF igure 10. Taping Dimensions for GR DirectionGeneral tolerance in mmREEL DIMENSIONSF igure 11. Reel Dimensions , QRE1113GR, Notes1. Refer to application note AND8003/D, Storage and Handling of Dry Packed Surface Mounted Devices for details of handling Product soldering terminals are silver plated and oxidization may occur with prolonged exposure to ambient environment.
6 Oxidized terminalmay have poor solderability performance. Keep unsealed devices in moisture barrier bag sealed with desiccant or in dry cabinet at <5%relative Store PCB in sealed moisture barrier bag together with desiccant or store in dry cabinet at <5% relative humidity. Mounted device that hasbeen exposed to ambient environment for long period of time may suffer moisture related damage if PCB is subjected to subsequent hightemperature RECTANGULAR THROUGH HOLECASE 100 AQISSUE ODATE 30 SEP 2016 MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.
7 ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 Reflective RECTANGULAR THROUGH HOLE Semiconductor Components Industries, LLC, 313 / Reflective RECTANGULAR SURFACE MOUNTCASE 100 CYISSUE ODATE 31 JAN 2017 MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.
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