BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors

1 Semiconductor Components Industries, LLC, 2011 September, 2011 Rev. 61 Publication Order Number:BC327/DBC327, BC327-16, BC327-25, BC327-40 Amplifier TransistorsPNP SiliconFeatures These are Pb free Devices*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO 45 VdcCollector Emitter VoltageVCES 50 VdcEmitter Base VoltageVEBO Current ContinuousIC 800mAdcTotal Power Dissipation @ TA = 25 CDerate above TA = 25 CTotal Power Dissipation @ TA = 25 CDerate above TA = 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device.

2 MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb free strategy and soldering details, pleasedownload the ON Semiconductor soldering and Mounting TechniquesReference Manual, = Device CodeA= Assembly LocationY= YearWW = Work WeekG= Pb free PackageMARKING DIAGRAM(Note: Microdot may be in either location) detailed ordering, marking, and shipping information inthe package dimensions section on page 4 of this data INFORMATION12312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 17BC327, BC327 16, BC327 25, BC327 40 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO FF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = 10 mA, IB = 0)V(BR)CEO 45 VdcCollector Emitter Breakdown Voltage(IC = 100 mA, IE = 0)V(BR)CES 50 VdcEmitter Base Breakdown Voltage(IE = 10 mA, IC = 0)V(BR)EBO VdcCollector Cutoff Current(VCB = 30 V, IE = 0)ICBO 100nAdcCollector Cutoff Current(VCE = 45 V, VBE = 0)

3 ICES 100nAdcEmitter Cutoff Current(VEB = V, IC = 0)IEBO 100nAdcON CHARACTERISTICSDC Current Gain(IC = 100 mA, VCE = V)BC327BC327 16BC327 25BC327 40(IC = 300 mA, VCE = V)hFE10010016025040 630250400630 Base Emitter On Voltage(IC = 300 mA, VCE = V)VBE(on) Emitter Saturation Voltage(IC = 500 mA, IB = 50 mA)VCE(sat) SIGNAL CHARACTERISTICSO utput Capacitance(VCB = 10 V, IE = 0, f = MHz)Cob 11 pFCurrent Gain Bandwidth Product(IC = 10 mA, VCE = V, f = 100 MHz)fT 260 MHzFigure 1. Thermal Responset, TIME (SECONDS) (t), NORMALIZED EFFECTIVE TRANSIENTTHERMAL RESISTANCED = PULSEqJC(t) = (t) qJCqJC = 100 C/W MAXqJA(t) = r(t) qJAqJA = 375 C/W MAXD CURVES APPLY FORPOWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) TC = P(pk) qJC(t)t1t2P(pk)DUTY CYCLE, D = t1/t2 SINGLE PULSEBC327, BC327 16, BC327 25, BC327 40 , COLLECTOR-EMITTER VOLTAGEF igure 2.

4 Active Region Safe Operating AreaIC, COLLECTOR CURRENT (mA)Figure 3. DC Current GainIC, COLLECTOR CURRENT (mA)hFE, DC CURRENT LIMITTHERMAL LIMITSECOND BREAKDOWN sTJ = 135 C100 msVCE = VTA = 25 CTA = 25 CTC = 25 Cdcdc(APPLIES BELOW RATED VCEO)IB, BASE CURRENT (mA)Figure 4. Saturation RegionIC, COLLECTOR CURRENT (mA)Figure 5. On , REVERSE VOLTAGE (VOLTS)Figure 6. Temperature Coefficients+ , COLLECTOR CURRENTF igure 7. , COLLECTOR-EMITTER VOLTAGE (VOLTS)V, VOLTAGE (VOLTS)V, TEMPERATURE COEFFICIENTS (mV/ C) C, CAPACITANCE (pF) = 25 CIC = -10 mAIC = -100 mAIC = -300 mAIC =-500 mATA = 25 CVBE(sat) @ IC/IB = 10 VBE(on) @ VCE = VVCE(sat) @ IC/IB = 10qVC for VCE(sat)qVB for VBECobCibBC327, BC327 16, BC327 25, BC327 40 INFORMATIOND evice Order NumberSpecific Device MarkingPackage TypeShipping BC327G7TO 92 Straight Lead(Pb free )5000 Units / BulkBC327RL1G327TO 92 Bent Lead(Pb free )2000 / Tape & ReelBC327 025G327TO 92 Straight Lead(Pb free )5000 Units / BulkBC327 25RL1G7 25TO 92 Bent Lead(Pb free )2000 / Tape & ReelBC327 25ZL1G32725TO 92 Bent Lead(Pb free )

5 2000 / Tape & Ammo BoxBC327 40ZL1G7 40TO 92 Bent Lead(Pb free )2000 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLES ON PAGE 2 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1:112312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3 NOTES:1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE Semiconductor Components Industries, LLC, 2002 October, 2002 Rev.

6 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 3TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLE 1:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 6:PIN 1. GATE2. SOURCE & SUBSTRATE3. DRAINSTYLE 11:PIN 1. ANODE2. CATHODE & ANODE3. CATHODESTYLE 16:PIN 1. ANODE2. GATE3. CATHODESTYLE 21:PIN 1. COLLECTOR2. EMITTER3. BASESTYLE 26:PIN 1. VCC2. GROUND 23. OUTPUTSTYLE 31:PIN 1.

7 GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. SOURCE2. DRAIN3. GATESTYLE 12:PIN 1. MAIN TERMINAL 12. GATE3. MAIN TERMINAL 2 STYLE 17:PIN 1. COLLECTOR2. BASE3. EMITTERSTYLE 22:PIN 1. SOURCE2. GATE3. DRAINSTYLE 27:PIN 1. MT2. SUBSTRATE3. MTSTYLE 32:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. ANODE3. CATHODESTYLE 8:PIN 1. DRAIN2. GATE3. SOURCE & SUBSTRATESTYLE 13:PIN 1. ANODE 12. GATE3. CATHODE 2 STYLE 18:PIN 1. ANODE2. CATHODE3. NOT CONNECTEDSTYLE 23:PIN 1. GATE2. SOURCE3. DRAINSTYLE 28:PIN 1. CATHODE2. ANODE3. GATESTYLE 33:PIN 1.

8 RETURN2. INPUT3. OUTPUTSTYLE 4:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 9:PIN 1. BASE 12. EMITTER3. BASE 2 STYLE 14:PIN 1. EMITTER2. COLLECTOR3. BASESTYLE 19:PIN 1. GATE2. ANODE3. CATHODESTYLE 24:PIN 1. EMITTER2. COLLECTOR/ANODE3. CATHODESTYLE 29:PIN 1. NOT CONNECTED2. ANODE3. CATHODESTYLE 34:PIN 1. INPUT2. GROUND3. LOGICSTYLE 5:PIN 1. DRAIN2. SOURCE3. GATESTYLE 10:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. ANODE 12. CATHODE3. ANODE 2 STYLE 20:PIN 1. NOT CONNECTED2. CATHODE3. ANODESTYLE 25:PIN 1. MT 12. GATE3. MT 2 STYLE 30:PIN 1. DRAIN2. GATE3. SOURCESTYLE 35:PIN 1.

9 GATE2. COLLECTOR3. Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 2 OF 3 DOCUMENT NUMBER:98 ASB42022 BPAGE 3 OF 3 ISSUEREVISIONDATEAMADDED BENT LEAD TAPE & REEL VERSION. REQ. BY J. MAR 2007 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 11 AMCase Outline Number:29ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).

10 SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customer s technical experts.