BAV99LT1 - Dual Series Switching Diode

1 Semiconductor Components Industries, LLC, 1994 October, 2016 Rev. 121 Publication Order Number: BAV99LT1 /DBAV99L, SBAV99 LDual SeriesSwitching DiodeFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGS (Each Diode )RatingSymbolValueUnitReverse VoltageVR100 VdcForward CurrentIF215mAdcPeak Forward Surge CurrentIFM(surge)500mAdcRepetitive Peak Reverse VoltageVRRM100 VAverage Rectified Forward Current (Note 1)(averaged over any 20 ms period)IF(AV)715mARepetitive Peak Forward CurrentIFRM450mANon Repetitive Peak Forward Currentt = mst = mst = exceeding those listed in the Maximum Ratings table may damagethe device. If any of these limits are exceeded, device functionality should notbe assumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device DissipationFR 5 Board (Note 1) TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device DissipationAlumina Substrate (Note 2)TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and StorageTemperature RangeTJ, Tstg 65 to+150 C1.

2 FR 5 = Alumina = in ORDERING INFORMATIONCASE 318 SOT 23 STYLE 11 MARKING DIAGRAM3 CATHODE/ANODEANODE1 CATHODE2 For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 23(Pb Free)10,000 / Tape & ReelBAV99LT1 GSOT 23(Pb Free)3,000 / Tape & Reel1A7 MGG*Date Code orientation and/or overbar mayvary depending upon manufacturing = Device CodeM= Date Code*G= Pb Free Package(Note: Microdot may be in either location)SBAV99LT1 GSOT 23(Pb Free)3,000 / Tape & ReelSBAV99LT3 GSOT 23(Pb Free)10,000 / Tape & , CHARACTERISTICS (TA = 25 C unless otherwise noted) (Each Diode )CharacteristicSymbolMinMaxUnitReve rse Breakdown Voltage,(I(BR) = 100 mA)V(BR)100 VdcReverse Voltage Leakage Current,(VR = 100 Vdc)(VR = 25 Vdc, TJ = 150 C)(VR = 70 Vdc, TJ = 150 C)IR Capacitance,(VR = 0, f = MHz)CD Voltage,(IF = mAdc)(IF = 10 mAdc)(IF = 50 mAdc)(IF = 150 mAdc)VF 71585510001250mVdcReverse Recovery Time,(IF = IR = 10 mAdc, iR(REC) = mAdc) RL = 100 Wtrr Recovery Voltage, (IF = 10 mA, tr = 20 ns)VFR APPLICABLE TO EACH DIODEVF, FORWARD VOLTAGE (V)VR, REVERSE VOLTAGE (V)Figure 1.

3 Forward VoltageFigure 2. Leakage CurrentFigure 3. = 85 CTA = 55 CTA = 25 CTA = 40 CTA = 55 CTA = 150 CIF, FORWARD CURRENT (mA)TA = 125 10203040506070TA = 85 CTA = 55 CTA = 125 CTA = 150 CTA = 25 CIR, REVERSE CURRENT (mA) , REVERSE VOLTAGE (V)Cd, Diode CAPACITANCE (pF) 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1.

4 RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2. CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2. SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1.

5 GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1. CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2. ANODE 3. ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

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