J309, J310 - JFET VHF/UHF Amplifiers - ON Semiconductor

1 J309, J310. Preferred Device JFET VHF/UHF Amplifiers N Channel Depletion Features Pb Free Packages are Available* 1 DRAIN. MAXIMUM RATINGS. Rating Symbol Value Unit 3. Drain Source Voltage VDS 25 Vdc GATE. Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc 2 SOURCE. Total Device Dissipation @ TA = 25 C PD 350 mW. Derate above = 25 C mW/ C. Junction Temperature Range TJ 65 to +125 C. Storage Temperature Range Tstg 65 to +150 C. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are TO 92.

2 Exceeded, device functional operation is not implied, damage may occur and CASE 29 11. 1. reliability may be affected. 2 STYLE 5. 3. MARKING DIAGRAM. J3xx AYWW G. G. J3xx = Device Code xx = 09 or 10. A = Assembly Location Y = Year WW = Work Week G = Pb Free Package (Note: Microdot may be in either location). ORDERING INFORMATION. See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use *For additional information on our Pb Free strategy and soldering details, please and best overall value. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

3 Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: March, 2006 Rev. 1 J309/D. J309, J310. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS. Gate Source Breakdown Voltage V(BR)GSS 25 Vdc (IG = mAdc, VDS = 0). Gate Reverse Current IGSS. (VGS = 15 Vdc, VDS = 0, TA = 25 C) nAdc (VGS = 15 Vdc, VDS = 0, TA = +125 C) mAdc Gate Source Cutoff Voltage VGS(off) Vdc (VDS = 10 Vdc, ID = nAdc) J309 J310 ON CHARACTERISTICS. Zero Gate Voltage Drain Current(1) IDSS mAdc (VDS = 10 Vdc, VGS = 0) J309 12 30. J310 24 60. Gate Source Forward Voltage VGS(f) Vdc (VDS = 0, IG = mAdc).

4 SMALL SIGNAL CHARACTERISTICS. Common Source Input Conductance Re(yis) mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J309 . J310 . Common Source Output Conductance Re(yos) mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz). Common Gate Power Gain Gpg 16 dB. (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz). Common Source Forward Transconductance Re(yfs) 12 mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz). Common Gate Input Conductance Re(yig) 12 mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz). Common Source Forward Transconductance gfs mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = kHz) J309 10000 20000. J310 8000 18000. Common Source Output Conductance gos 250 mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = kHz).

5 Common Gate Forward Transconductance gfg mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = kHz) J309 13000 . J310 12000 . Common Gate Output Conductance gog mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = kHz) J309 100 . J310 150 . Gate Drain Capacitance Cgd pF. (VDS = 0, VGS = 10 Vdc, f = MHz). Gate Source Capacitance Cgs pF. (VDS = 0, VGS = 10 Vdc, f = MHz). FUNCTIONAL CHARACTERISTICS. Equivalent Short Circuit Input Noise Voltage en 10 nV Hz (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz). 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2. J309, J310. ORDERING INFORMATION. Device Package Shipping . J309 TO 92. J309G TO 92 1000 Units / Bulk (Pb Free). J310 TO 92. J310G TO 92 1000 Units / Bulk (Pb Free).

6 J310 RLRP TO 92. J310 RLRPG TO 92 2000 Units / Tape & Ammo Box (Pb Free). J310ZL1 TO 92. J310ZL1G TO 92 2000 Units / Tape & Ammo Box (Pb Free). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Yfs , FORWARD TRANSCONDUCTANCE (mmhos). 70 70 35. IDSS, SATURATION DRAIN CURRENT (mA). 60 60 30 VDS = 10 V TA = 55 C. VDS = 10 V TA = 55 C f = MHz + 25 C. I D , DRAIN CURRENT (mA). 50 50 25. IDSS + 25 C. 40 + 25 C 40 20. +150 C. 30 30 15 + 25 C. +150 C. 20 20 55 C. + 25 C 10. 55 C +150 C. 10 +150 C 10 0 0. 0 0. ID VGS, GATE SOURCE VOLTAGE (VOLTS).

7 VGS, GATE SOURCE VOLTAGE (VOLTS). IDSS VGS, GATE SOURCE CUTOFF VOLTAGE (VOLTS). Figure 1. Drain Current and Transfer Figure 2. Forward Transconductance Characteristics versus Gate Source Voltage versus Gate Source Voltage 3. J309, J310. ( mhos). 100 k k 10 120. Yos, OUTPUT ADMITTANCE ( mhos). Yfs , FORWARD TRANSCONDUCTANCE . RDS. R DS , ON RESISTANCE (OHMS). Yfs 96. Yfs CAPACITANCE (pF). 10 k 100. 72. Cgs 48. k VGS(off) = V = 10. Yos VGS(off) = V =. Cgd 24. 100 0 0. 10 20 30 50 100 10 0. ID, DRAIN CURRENT (mA) VGS, GATE SOURCE VOLTAGE (VOLTS). Figure 3. Common Source Output Figure 4. On Resistance and Junction Admittance and Forward Transconductance Capacitance versus Gate Source Voltage versus Drain Current |S21|, |S11| |S12|, |S22|.

8 30 S22. VDS = 10 V 24 |Y11|, |Y21 |, |Y22 | (mmhos). ID = 10 mA. S21. TA = 25 C. Y11. Y12 (mmhos). 18 VDS = 10 V ID = 10 mA. TA = 25 C. Y21. 12 S11. Y22. Y12 S12. 0 100 200 300 500 700 1000 100 200 300 500 700 1000. f, FREQUENCY (MHz) f, FREQUENCY (MHz). Figure 5. Common Gate Y Parameter Figure 6. Common Gate S Parameter Magnitude versus Frequency Magnitude versus Frequency q21, q11 q12, q22 q11, q12 q21, q22. 180 50 2 0 87 20 120 0. q11. q22 20 . 40 q21. 170 40 86 40 100 q22 20 . q21. 60 . 160 30 80 85 60 80 40 . 100 . 150 20 120 84 80 60 q21 60 . q12. q11 140 q12. 140 10 VDS = 10 V 160 83 100 40 VDS = 10 V 80 . q11. ID = 10 mA ID = 10 mA. TA = 25 C 180.

9 TA = 25 C. 130 0 200 82 120 20 100 . 100 200 300 500 700 1000 100 200 300 500 700 1000. f, FREQUENCY (MHz) f, FREQUENCY (MHz). Figure 7. Common Gate Y Parameter Figure 8. S Parameter Phase Angle Phase Angle versus Frequency versus Frequency 4. MECHANICAL CASE OUTLINE. PACKAGE DIMENSIONS. TO 92 (TO 226). CASE 29 11. SCALE 1:1 ISSUE AM. DATE 09 MAR 2007. 12 1. 2. 3 3. STRAIGHT LEAD BENT LEAD. BULK PACK TAPE & REEL. AMMO PACK. NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI. BULK PACK , 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R. R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND. P BEYOND DIMENSION K MINIMUM.

10 L. SEATING INCHES MILLIMETERS. PLANE K DIM MIN MAX MIN MAX. A B C D X X D G H G J H J K --- --- L --- --- V C N P --- --- SECTION X X R --- --- 1 N V --- --- N. NOTES: A B BENT LEAD. R 1. DIMENSIONING AND TOLERANCING PER. TAPE & REEL ASME , 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND. DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P. P AND BEYOND DIMENSION K MINIMUM. T. MILLIMETERS. SEATING. PLANE K DIM MIN MAX. A B C D X X D G J G K --- J N V P C R --- V --- SECTION X X. 1 N. STYLES ON PAGE 2. DOCUMENT NUMBER: 98 ASB42022B Electronic versions are uncontrolled except when accessed directly from the Document Repository.