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N-channel 60V - 0.045 - 5A - SO-8 STripFET Power MOSFET

January 2007 Rev 41/1212 STS5NF60LN- channel 60V - - 5A - SO-8 STripFET Power MOSFETG eneral features Standard outline for easy automated surface mount assembly Low threshold driveDescriptionThis Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing Switching application Internal schematic diagram TypeVDSSRDS(on)IDSTS5NF60L60V< codesPart numberMarkingPackagePackagingSTS5NF60LS5 NF60 LSO-8 Tape&reelContentsSTS5NF60L2/12 Contents1 Electrical ratings.

January 2007 Rev 4 1/12 12 STS5NF60L N-channel 60V - 0.045Ω - 5A - SO-8 STripFET™ Power MOSFET General features Standard outline for easy automated …

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Transcription of N-channel 60V - 0.045 - 5A - SO-8 STripFET Power MOSFET

1 January 2007 Rev 41/1212 STS5NF60LN- channel 60V - - 5A - SO-8 STripFET Power MOSFETG eneral features Standard outline for easy automated surface mount assembly Low threshold driveDescriptionThis Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing Switching application Internal schematic diagram TypeVDSSRDS(on)IDSTS5NF60L60V< codesPart numberMarkingPackagePackagingSTS5NF60LS5 NF60 LSO-8 Tape&reelContentsSTS5NF60L2/12 Contents1 Electrical ratings.

2 32 Electrical characteristics .. characteristics (curves) .. 63 Test circuit .. 84 Package mechanical data .. 95 Revision history .. 11 STS5NF60 LElectrical ratings3/121 Electrical ratingsTable maximum ratingsSymbolParameterValueUnitVDSD rain-source voltage (vgs = 0)60 VVGSGate- source voltage 20 VIDD rain current (continuous) at TC = 25 C5 AIDD rain current (continuous) at TC = 100 C3 AIDM (1)1. Pulse width limited by safe operating areaDrain current (pulsed)20 APTOTT otal dissipation at TC = 25 C Cdv/dt (2)2. ISD 5A, di/dt 100A/ s, VDD V(BR)DSS, Tj TJMAXPeak diode recovery voltage TemperatureMax operating junction temperature-55 to 150150 C CTable dataRthj-a(1)Thermal resistance junction-ambient Max1.

3 Mounted on FR-4 board (t 10 sec.).50 C/WTlMaximum lead temperature for soldering purpose Ty p 150 CElectrical characteristicsSTS5NF60L4/12 2 Electrical characteristics(TCASE=25 C unless otherwise specified) Table statesSymbolParameterTest (BR)DSSD rain-source Breakdown voltageID = 250 A, VGS = 060 VIDSSZero gate voltage Drain current (VGS = 0)VDS = Max rating1 AVDS= Max rating, TC=125 C10 AIGSSGate-body leakagecurrent (VDS = 0)VGS = 20V 100nAVGS(th)Gate threshold voltageVDS = VGS, ID = 250 (on)Static drain-source on resistanceVGS = 10V, ID = = , ID = Table (1)1. Pulsed: Pulse duration = 300 s, duty cycle transconductanceVDS = 15V, ID= A7 SCissInput capacitanceVDS = 25V, f = 1 MHz, VGS = 01250pFCossOutput capacitance130pFCrssReverse transfer capacitance26pFQgTotal gate chargeVDD = 48V, ID = 5A,VGS = 5V(see Figure 13)17nCQgsGate-source charge6nCTable timesSymbolParameterTest (on)trTurn-on delay time Rise timeVDD=30 V, ID= , RG= , VGS= (see Figure 12)1328nsnstd(off)tfTurn-off Delay TimeFall TimeVDD = 30 V, ID = RG= , VGS = (see Figure 12)4510nsnsSTS5NF60 LElectrical characteristics5/12 Table drain diodeSymbolParameterTest current5 AISDM (1)1.

4 Pulse width limited by safe operating current (pulsed)20 AVSD (2)2. Pulsed: Pulse duration = 300 s, duty cycle on voltageISD = 5A, VGS = recovery timeReverse recovery chargeReverse recovery currentISD = 5A, VDD = 40 Vdi/dt = 100A/ s,Tj = 150 C(see Figure 14)85852nsnCAElectrical characteristicsSTS5NF60L6/12 Electrical characteristics (curves) Figure operating area Figure impedance Figure characteristicsFigure characteristics Figure drain-source on resistance STS5NF60 LElectrical characteristics7/12 Figure charge vs. gate-source voltage Figure variations Figure gate threshold voltage vs.

5 TemperatureFigure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics Test circuitSTS5NF60L8/12 3 Test circuit Figure 12. Switching times test circuit for resistive loadFigure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery timesFigure 15. Unclamped Inductive load test circuit Figure 16. Unclamped inductive waveformFigure 17. Switching time waveform STS5NF60 LPackage mechanical data9/124 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK packages.

6 These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : mechanical dataSTS5NF60L10/12 (typ.) (max.)SO-8 MECHANICAL DATASTS5NF60 LRevision history11/125 Revision history Table historyDateRevisionChanges21-Jun-20042 First release06-Nov-20063 The document has been reformatted30-Jan-20074 Typo mistake on Table Please Read Carefully:Information in this document is provided solely in connection with ST products.

7 STMicroelectronics NV and its subsidiaries ( ST ) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without ST products are sold pursuant to ST s terms and conditions of are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of thisdocument refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party productsor services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of suchthird party products or services or any intellectual property contained OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY.

8 FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOTRECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAININGAPPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVEGRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately voidany warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, anyliability of and the ST logo are trademarks or registered trademarks of ST in various in this document supersedes and replaces all information previously ST logo is a registered trademark of STMicroelectronics.

9 All other names are the property of their respective owners. 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of


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