TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP ...

1 Semiconductor Components Industries, LLC, 2012 May, 2012 Rev. 61 Publication Order Number:TIP35/DTIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)Complementary SiliconHigh-Power TransistorsDesigned for general purpose power amplifier and 25 A Collector Current Low Leakage Current ICEO= mA @ 30 and 60 V Excellent DC Gain hFE= 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = min @ IC = A, f = MHz These are Pb Free Devices*MAXIMUM RATINGSR atingSymbolTIP35 ATIP36 ATIP35 BTIP36 BTIP35 CTIP36 CUnitCollector Emitter VoltageVCEO6080100 VdcCollector Base VoltageVCB6080100 VdcEmitter Base Current Continuous Peak (Note 1)IC2540 AdcBase Current Power Dissipation@ TC = 25_CDerate above 25_CPD125WW/_COperating and storage Junction Temperature RangeTJ, Tstg 65 to +150_CUnclamped Inductive LoadESB90mJTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance,Junction to C/WJunction To Free Air Thermal C/WStresses exceeding Maximum Ratings may damage the device.

2 MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, AMPERECOMPLEMENTARY SILICONPOWER TRANSISTORS60 100 VOLTS, 125 WATTSSee detailed ordering and shipping information in the packagedimensions section on page 2 of this data 93 (TO 218)CASE 340 DSTYLE 1TO 247 CASE 340 LSTYLE 3 NOTE: Effective June 2012 this device willbe available only in the TO 247package.

3 Reference FPCN# , TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) DIAGRAMSAYWWGTIP3xxTIP3xxAYWWG1 BASE2 COLLECTOR3 EMITTERTIP3xx= Device CodeA= Assembly LocationY= YearWW= Work WeekG=Pb Free Package1 BASE2 COLLECTOR3 EMITTERTO 247TO 218 ORDERING INFORMATIOND evicePackageShippingTIP35 AGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP35 BGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP35 CGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP36 AGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP36 BGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP36 CGSOT 93 (TO 218)(Pb Free)30 Units / RailTIP35 AGTO 247(Pb Free)30 Units / RailTIP35 BGTO 247(Pb Free)30 Units / RailTIP35 CGTO 247(Pb Free)30 Units / RailTIP36 AGTO 247(Pb Free)30 Units / RailTIP36 BGTO 247(Pb Free)30 Units / RailTIP36 CGTO 247(Pb Free)

4 30 Units / RailTIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 2)(IC = 30 mA, IB = 0)TIP35A, TIP36 ATIP35B, TIP36 BTIP35C, TIP36C VCEO(sus) 6080100 Vdc Collector Emitter Cutoff Current(VCE = 30 V, IB = 0)TIP35A, TIP36A(VCE = 60 V, IB = 0)TIP35B, TIP35C , TIP36B, TIP36C ICEO mA Collector Emitter Cutoff Current(VCE = Rated VCEO, VEB = 0) ICES mA Emitter Base Cutoff Current(VEB = V, IC = 0) IEBO mA ON CHARACTERISTICS (Note 2)

5 DC Current Gain(IC = A, VCE = V)(IC = 15 A, VCE = V) hFE 2515 75 Collector Emitter Saturation Voltage(IC = 15 A, IB = A)(IC = 25 A, IB = A) VCE(sat) Vdc Base Emitter On Voltage(IC = 15 A, VCE = V)(IC = 25 A, VCE = V) VBE(on) Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain(IC = A, VCE = 10 V, f = kHz) hfe 25 Current Gain Bandwidth Product(IC = A, VCE = 10 V, f = MHz) fT MHz2.

6 Pulse Test: Pulse Width = 300 ms, Duty Cycle v , TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) 1. Power DeratingTC, CASE TEMPERATURE ( C)012502517575100751005012525150PD, POWER DISSIPATION (WATTS)50 Figure 2. Switching Time Equivalent Test 3. Turn On TimeIC, COLLECTOR CURRENT (AMPERES) = 25 CIC/IB = 10 VCC = 30 VVBE(off) = 2 Vt, TIME ( s) (PNP)(NPN)TURN ON TIMETURN OFF TIME+ V0tr 20 V10 TO 100 30 VVCCDUTY CYCLE SCOPEtr 20 nsVBB+ VFOR CURVES OF FIGURES 3 & 4, RB & RL ARE LEVELS ARE APPROXIMATELY AS NPN, REVERSE ALL + V10 to 100 mstr 20 nsDUTY CYCLE 30 VVCC10 RBTO SCOPEtr 20 nsTIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) , COLLECTOR CURRENT (AMPERES)Figure 4. Turn Off Time10t, TIME ( s) = 25 CVCC = 30 VIC/IB = 10IB1 = IB2tstf(PNP)(NPN)tstfIC, COLLECTOR CURRENT (AMPS)hFE, DC CURRENT GAINF igure 5.

7 DC Current = VTJ = 25 BIAST here are two limitations on the power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; , the transistor must not be subjected to greaterdissipation than the curves data of Figure 6 is based on TC = 25_C; TJ(pk) isvariable depending on power level. Second breakdownpulse limits are valid for duty cycles to 10% but must bederated when TC w 25_C. Second breakdown limitations donot derate the same as thermal BIASFor inductive loads, high voltage and high current must besustained simultaneously during turn off, in most cases,with the base to emitter junction reverse biased.

8 Under theseconditions the collector voltage must be held to a safe levelat or below a specific value of collector current. This can beaccomplished by several means such as active clamping, RCsnubbing, load line shaping, etc. The safe level for thesedevices is specified as Reverse Bias Safe Operating Areaand represents the voltage current conditions duringreverse biased turn off. This rating is verified underclamped conditions so that the device is never subjected toan avalanche mode. Figure 7 gives RBSOA , COLLECTOR-EMITTER VOLTAGE (VOLTS) BREAKDOWNTHERMAL LIMITBONDING WIRE msdc300 , COLLECTOR CURRENT (AMPS)10 msFigure 6. Maximum Rated Forward BiasSafe Operating = 25 CTIP35A, 36 ATIP35B, 36 BTIP35C, 36 CVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMPS)Figure 7.

9 Maximum Rated Forward BiasSafe Operating Area2510102030507090TJ 100 CTIP35 ATIP36 ATIP35 BTIP36 BTIP35 CTIP36 CTIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) 8. Inductive Load SwitchingTEST CIRCUITVOLTAGE AND CURRENT WAVEFORMSNOTES:A. L1 and L2 are 10 mH, W, Chicago Standard Transformer Corporation C 2688, or Input pulse width is increased until ICM = For NPN, reverse all = 100 VBB2 = 0 VBB1 = 10 VVCE MONITORL1(SEE NOTE A)L2(SEE NOTE A)TUTVCC = 10 VIC MONITOR+-RS = W50+ V0- A-10 Vtw = ms(SEE NOTE B)INPUTVOLTAGECOLLECTORCURRENTCOLLECTORV OLTAGEV(BR)CER00100 msCASE 340D 02 ISSUE EDATE 01/03/2002 SOT 93 (TO 218)STYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORNOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: 2:PIN 1.

10 ANODE2. CATHODE3. ANODE4. 1:1 AYWW xxxxxA= Assembly LocationY= YearWW= Work Weekxxxxx= Device CodeMARKING DIAGRAMMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.